Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Chinese Journal of Luminescence

Electro-optic Effects in Special Asymmetric Quantum Wells

YU Feng-mei

Published Jan 1, 2004• 0 citations
OpenAlex

Abstract

Recently, there has been an increasing interest in nonlinear optical properties of semiconductor quantum well structures, because of their relevance for studying practical applications and as a probe for the electronic structure of mesoscopic media. In this paper, the nonlinear electro-optic effects in special asymmetric quantum wells are studied. Because of this kind of quantum well is more approximate a practical quantum well between the conduction band and valence band, and it can be realized very easily in experiment. The analytical expressions of electro-optic coefficient have been derived by compact density-matrix approach and the numerical results were presented for GaAs/AlGaAs asymmetric quantum wells. The shape of the quantum well varying with the parameter a and the parameter V_0 were plotted. It is found that the asymmetry of the quantum wells enhances with the increase of parameter a. On the contrary, the asymmetry of the quantum wells decreases with the increase of the parameter V_0. The maximum values of the electro-optic coefficient varying with the parameter a and the parameter V_0 were plotted. The numerical results show the electro-optic coefficient enhances with the increases of the parameter a and the decrease of the parameter V_0. Therefore, it is found that the electro-optic coefficient increases with the enhancement of the quantum wells' asymmetry. The electro-optic coefficient as a function of the photon energy with different values of parameter a and different values of parameter V_0 were also plotted. It can be observed that there are three peak values in the figures, respectively. And it is obvious that the larger the asymmetry of quantum wells is, the bigger the peak value is. It can be seen that with the increase of the asymmetry of quantum well, the peaks move to the low energy side. Moreover, the electro-optic coefficient obtained in this special quantum well is as large as 10~(-6) m/V. With the advances of nanofabrication technology recently, it is possible to fabricate such semiconductor quantum wells and it is possible for us to get better nonlinear materials in experiments.

Related papers

Nonlinear optical rectification effects in an asymmetric quantum well

Youbin Yu

Nonlinear optical rectification effects in an asymmetric quantum well was investigated. Analytical expression of optical rectification coefficient was deduced by using density-matrix method. The larger optical rectification coefficient can be obtained by choosing an appropriate parameter a. The optical rectification coefficient increases with the enhancement of the asymmetry of the quantum well. The larger the asymmetry of quantum well is, the bigger the peak value will be. Moreover, with the increasing of asymmetry of quantum well, the peaks move to the left side of the figure. This is a feasible way to get fine nonlinear materials in experiment.

Wireless and Optical Communications Conference•May 1, 2013•0 citations

Calculation of Nonlinear Intersubband Optical Absorption in Asymmetric Quantum Wells

Peng Tan

In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.

Chinese Journal of Luminescence•Jan 1, 2006•0 citations

Study on Optical Rectification and Electro-optic Effects in Morse Quantum Well

Youbin Yu

Analytical expressions of optical rectification and electro-optic effects in Morse quantum well are obtained by density matrix approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient and electro-optic effects increase with the enhancement of the asymmetry of Morse quantum well.

Journal of Guangzhou University•Jan 1, 2002•0 citations

Investigation on Nonlinear Optical Properties of Symmetric and Asymmetric Double V-Shaped Potential Wells with Structural Parameters and External Electromagnetic Fields

Aysevil Salman Durmuşlar

Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.

•Oct 7, 2022•0 citations

Study on linear and third-order nonlinear optical absorption in special asymmetric quantum wells

Qi Guo

Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.

Chinese Journal of Quantum Electronics•Jan 1, 2004•0 citations

Investigation on nonlinear optical properties of symmetric and asymmetric double V-shaped AlxGa1-xAs/GaAs potential wells with structural parameters and external electromagnetic fields

Aysevil Salman Durmuşlar

Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure have been theoretically investigated. Responses of these coefficients to well widths, barrier widths and aluminium concentrations within the barrier as well as applied external electromagnetic fields were the subject of this study. The electronic spectra of the structures are obtained as a solution to the Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated by the analytical expressions obtained by iterative solutions within the compact density matrix approach. Although increasing barrier width and aluminium concentration act similarly significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths act differently for each configuration. Strengthening electric and magnetic fields shift the resonance peaks to blue for both symmetric and asymmetric wells. The results show that optical properties can be controlled by structural parameters, external probes and asymmetry of double V-shaped wells.

The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics•Feb 10, 2023•10 citations
Recently, there has been an increasing interest in nonlinear optical properties of semiconductor quantum well structures, because of their relevance for studying practical applications and as a probe for the electronic structure of mesoscopic media. In this paper, the nonlinear electro-optic effects in special asymmetric quantum wells are studied. Because of this kind of quantum well is more approximate a practical quantum well between the conduction band and valence band, and it can be realized very easily in experiment. The analytical expressions of electro-optic coefficient have been derived by compact density-matrix approach and the numerical results were presented for GaAs/AlGaAs asymmetric quantum wells. The shape of the quantum well varying with the parameter a and the parameter V_0 were plotted. It is found that the asymmetry of the quantum wells enhances with the increase of parameter a. On the contrary, the asymmetry of the quantum wells decreases with the increase of the parameter V_0. The maximum values of the electro-optic coefficient varying with the parameter a and the parameter V_0 were plotted. The numerical results show the electro-optic coefficient enhances with the increases of the parameter a and the decrease of the parameter V_0. Therefore, it is found that the electro-optic coefficient increases with the enhancement of the quantum wells' asymmetry. The electro-optic coefficient as a function of the photon energy with different values of parameter a and different values of parameter V_0 were also plotted. It can be observed that there are three peak values in the figures, respectively. And it is obvious that the larger the asymmetry of quantum wells is, the bigger the peak value is. It can be seen that with the increase of the asymmetry of quantum well, the peaks move to the low energy side. Moreover, the electro-optic coefficient obtained in this special quantum well is as large as 10~(-6) m/V. With the advances of nanofabrication technology recently, it is possible to fabricate such semiconductor quantum wells and it is possible for us to get better nonlinear materials in experiments.
Nonlinear optical rectification effects in an asymmetric quantum well was investigated. Analytical expression of optical rectification coefficient was deduced by using density-matrix method. The larger optical rectification coefficient can be obtained by choosing an appropriate parameter a. The optical rectification coefficient increases with the enhancement of the asymmetry of the quantum well. The larger the asymmetry of quantum well is, the bigger the peak value will be. Moreover, with the increasing of asymmetry of quantum well, the peaks move to the left side of the figure. This is a feasible way to get fine nonlinear materials in experiment.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
Abstract Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for both symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure are theoretically investigated. Responses of these coefficients to well widths, barrier widths and concentration of aluminum within the barrier as well as applied external electromagnetic fields are the subject of this study. The electronic spectra of the structures are obtained as a solution of Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated via the analytical expressions obtained by iterative solutions within compact density matrix approach. Although increasing barrier width and aluminum concentration act similar significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths acts differently for each configuration. Widening both wells in symmetric case moves the resonance peaks to lower energies, while the rise on only one well carries the resonance peaks to higher energies for asymmetric case. Enhancing both the electric and magnetic fields shift the resonance peaks to the blue for symmetric and also asymmetric wells. High dependency of the optical properties to the structural parameters and external electromagnetic fields as well as asymmetry of the wells is presented here in detail.
Authors give a detailed procedure for the calculation of the linear and third-order nonlinear optical absorption in special asymmetric quantum wells. It is obtained an analytic formula for the optical absorption by the compact density matrix method and the iterative procedure. Finally, the numerical results are presented for typical GaAs/AlGaAs asymmetric quantum wells. The numerical results show that the incident optical intensity and the asymmetry of the quantum wells have great influences on the optical absorption.
Linear, nonlinear and total optical absorption coefficients and relative refractive index changes for symmetric and asymmetric double V-shaped quantum well configurations formed within AlxGa1-xAs/GaAs heterostructure have been theoretically investigated. Responses of these coefficients to well widths, barrier widths and aluminium concentrations within the barrier as well as applied external electromagnetic fields were the subject of this study. The electronic spectra of the structures are obtained as a solution to the Schrödinger equation with relevant potential and external agents in the framework of effective mass and envelope wave function approximations. The optical properties are calculated by the analytical expressions obtained by iterative solutions within the compact density matrix approach. Although increasing barrier width and aluminium concentration act similarly significant red shifting on the referred coefficients for both symmetric and asymmetric double V-shaped wells, the varying well widths act differently for each configuration. Strengthening electric and magnetic fields shift the resonance peaks to blue for both symmetric and asymmetric wells. The results show that optical properties can be controlled by structural parameters, external probes and asymmetry of double V-shaped wells.