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Journal of Guangzhou University

Study on Optical Rectification and Electro-optic Effects in Morse Quantum Well

Youbin Yu

Published Jan 1, 2002• 0 citations
OpenAlex

Abstract

Analytical expressions of optical rectification and electro-optic effects in Morse quantum well are obtained by density matrix approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient and electro-optic effects increase with the enhancement of the asymmetry of Morse quantum well.

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The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi•Jun 17, 2017•2 citations
Analytical expressions of optical rectification and electro-optic effects in Morse quantum well are obtained by density matrix approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient and electro-optic effects increase with the enhancement of the asymmetry of Morse quantum well.
Recently, there has been an increasing interest in nonlinear optical properties of semiconductor quantum well structures, because of their relevance for studying practical applications and as a probe for the electronic structure of mesoscopic media. In this paper, the nonlinear electro-optic effects in special asymmetric quantum wells are studied. Because of this kind of quantum well is more approximate a practical quantum well between the conduction band and valence band, and it can be realized very easily in experiment. The analytical expressions of electro-optic coefficient have been derived by compact density-matrix approach and the numerical results were presented for GaAs/AlGaAs asymmetric quantum wells. The shape of the quantum well varying with the parameter a and the parameter V_0 were plotted. It is found that the asymmetry of the quantum wells enhances with the increase of parameter a. On the contrary, the asymmetry of the quantum wells decreases with the increase of the parameter V_0. The maximum values of the electro-optic coefficient varying with the parameter a and the parameter V_0 were plotted. The numerical results show the electro-optic coefficient enhances with the increases of the parameter a and the decrease of the parameter V_0. Therefore, it is found that the electro-optic coefficient increases with the enhancement of the quantum wells' asymmetry. The electro-optic coefficient as a function of the photon energy with different values of parameter a and different values of parameter V_0 were also plotted. It can be observed that there are three peak values in the figures, respectively. And it is obvious that the larger the asymmetry of quantum wells is, the bigger the peak value is. It can be seen that with the increase of the asymmetry of quantum well, the peaks move to the low energy side. Moreover, the electro-optic coefficient obtained in this special quantum well is as large as 10~(-6) m/V. With the advances of nanofabrication technology recently, it is possible to fabricate such semiconductor quantum wells and it is possible for us to get better nonlinear materials in experiments.
The optical rectification coefficient in electric-field biased hyperbolic quantum wells was studied. The analytic expression of optical rectification coefficient of this system is derived by means of density matrix approach and the iterative method. Finally, the numerical results were presented for a typical GaAs electric-field biased hyperbolic quantum wells. The results show that the optical rectification coefficient in this system is larger than that in bulk GaAs material and it will change with the change of the parameter a of the quantum well and the applied electric field F.
Nonlinear optical rectification effects in an asymmetric quantum well was investigated. Analytical expression of optical rectification coefficient was deduced by using density-matrix method. The larger optical rectification coefficient can be obtained by choosing an appropriate parameter a. The optical rectification coefficient increases with the enhancement of the asymmetry of the quantum well. The larger the asymmetry of quantum well is, the bigger the peak value will be. Moreover, with the increasing of asymmetry of quantum well, the peaks move to the left side of the figure. This is a feasible way to get fine nonlinear materials in experiment.
The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.