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Acta Sinica Quantum Optica

Optical Rectification in Morse Quantum Well

YU Feng-mei

Published Jan 1, 2002• 0 citations
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Abstract

Analytical expressions of optical rectification in Morse quantum well are obtained by density approach and iterative method. Numerical results are illustrated for a typical GaAs/AlGaAs Morse quantum well. It is found that the optical rectification coefficient increases with the enhancement of the asymmetry of Morse quantum well.

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The effects of a static electric field on the nonlinear optical rectification, second- and third-harmonic generation in a quantum well described by Morse potential are theoretically investigated. Analytical expressions for the optical coefficients due to intersubband optical transitions with an applied electric field are extracted from the compact-density matrix approach and iterative scheme. Numerical results presented for a typical GaAs quantum well reveal the feasibility of control of optical transitions between the size-quantized subbands. In addition, we have to emphasize the fact that the optical response of the system is remarkably sensitive to the electric field and structural range parameter.
Abstrcat The linear and nonlinear susceptibilities had been obtained by the compact-density-matrix approach in presence of the multifrequency incident optical field. An analytic formula for third-harmonic-generation was presented by graphic technology(Feynman). Numerical results were presented for typical GaAs/AlGaAs Morse quantum well. The results showed that third-harmonic-generation increased with the enhancement of a and decreased with relaxation constant increasing. Therefore, if the parameter was increased or the relaxation constant was reduced with the effects on the system associated by environment and other factors limited to minimum,a large third-harmonic-generation coefficient would be obtained.