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Journal of Qingdao University

A General Model for Continuous-wave Quasi-three-level Lasers Exhibiting Optical Bistability

Linhua Xia

Published Jan 1, 2010• 0 citations
OpenAlex

Abstract

In this Letter we report briefly the major results derived froma simple model developedfor a quasi-three-level laser exhibiting optical bistability.This model correctly predicts the existence of hysteresis loopin the laser operation under some certain conditions,and can explain most of the primary characteristics of the optical bistability occurring in continuous-wave laser operation of Yb-doped vanadate crystals.

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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Nov 2, 2007•0 citations
In this Letter we report briefly the major results derived froma simple model developedfor a quasi-three-level laser exhibiting optical bistability.This model correctly predicts the existence of hysteresis loopin the laser operation under some certain conditions,and can explain most of the primary characteristics of the optical bistability occurring in continuous-wave laser operation of Yb-doped vanadate crystals.
In this paper, an analytical model is developed for a quasi-three-level laser exhibiting optical bistability in its continuous-wave operation. This model gives the necessary conditions for the formation of such bistability, which are directly connected to measurable parameters of the laser medium, and reveals most of the primary characteristics of optical bistablity demonstrated experimentally with quasi-three-lasers based on Yb-doped vanadates. The principal parameters characterizing such bistability,xth\mathchar"702Dup,xth\mathchar"702Ddown, Δxbr,Ith\mathchar"702Dup, andIth\mathchar"702Ddown, can be expressed explicitly in terms of two normalized parameters,xa= 2αa0pa/δ andf=Isat,a/Isat,m. To confirm its validity and demonstrate its usefulness, this model is applied to a typical Yb:LuVO4laser displaying sizable optical bistability in its operation, giving very good agreement between theoretical prediction and experimental measurement.
In this paper, we generalize a previously developed model describing the behavior of optical bistability in the operation of a quasi-three-level laser by taking into account a Gaussian transverse distribution for the laser mode and including inhomogeneous line broadening for the laser medium. The results show that apart from some quantitative modifications, the primary characteristics of bistability predicted by the simplified model remain correct; in particular, the fundamental condition for the existence of bistability,fxa/(xa+1), turns out to hold universally. It is also revealed that in comparison with the results obtained in the simplified model, the intensities at the up- and down-threshold will be increased, whereas the bistability range will be reduced.
A theoretical modeling analysis is presented to study the optical bistability exhibited in the oscillation of an inhomogeneously broadened quasi-three-level laser. All the major characteristics of optical bistability depend on two normalized parameters, f and xa, which are defined by f = Isat,a/Isat,m and xa = 2αa0pa/δ and are related to measurable properties of the laser medium. In comparison with the case of a homogeneously broadened laser, the essential condition for the occurrence of such bistability, f < xa/(xa + 1), turns out to be the same, whereas the intensities at the up- and down-thresholds are substantially increased and the bistability range is reduced.
Intrinsic optical bistability and dynamic hysteresis phenomenon, induced by nonlinear excitation and energy level coupling, are predicted theoretically in single Tm-doped laser crystal pumped at 648nm avalanche wavelength. Taking into account the dominant energy transfer processes including excited state absorption, cross relaxation, energy transfer up-conversion and decay of the metastable level Tm3+ 3F4, the analytical formula of avalanche threshold condition are deduced in the steady-state approximation. Based on the theory of microscopic coupled rate equations, intrinsic optical bistability and influence of system parameters on hysteresis loop are studied numerically in detail by using a four-order Runge-Kutta technique. The numerical results predict that intrinsic optical bistability of near 2 micrometer fluorescence emission relevant to Tm 3F4→3H6 transition is achievable experimentally in single Tm-doped laser crystal. For realization of low threshold optical bistability and notable bistable hysteresis loop, it is beneficial to properly increase Tm3+-doped concentration and suppress energy transfer up-conversion. Furthermore, the interesting results obtained numerically show that laser-induced thermal effect is not the indispensable factor for occurrences of intrinsic optical bistability in rear-earth-doped crystal. Cooperation of nonliear excitation and energy level coupling can essentially lead to intrinsic optical bistability in rear-earth-doped system.