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The European Physical Journal B

Whole-wafer fabrication process for three-terminal double stacked tunnel junctions

Gianpiero Pepe, G. Peluso, Rossana Scaldaferri, L. Parlato, C. Granata, E. Esposito, M. Russo

Published Oct 1, 2001• 4 citations
Publisher
DOI
10.1007/s100510170032

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All hard Josephson tunnel junctions, whose base and counter electrodes are composed of double-layered niobium nitride (NbN) and niobium (Nb) films, have been successfully fabricated by isolating a junction sandwich formed on a whole silicon wafer with a reactive ion etching technique. The reactive ion etching technique has been used for patterning both base and counterelectrodes, and self-aligning definition of junction areas has been performed. The fabricated junctions show good quality single-particle tunneling characteristics and excellent uniformity in critical currents.
We demonstrate a double barrier long Josephson tunnel junction device of overlap geometry with an external electric contact to the middle electrode. The junctions were fabricated with a standard Nb/Al-AlO/sub x//Nb process. To exhibit fluxon coupling effects in stacked junctions, the intermediate Nb layer thickness between two barriers has to be of the order of the London penetration depth, i.e. 90 nm for sputtered Nb films. By using a planarization process, we were able to avoid steep steps on the wafer and so to reduce the intermediate layer thickness to 90 nm. Double-junction stacks with areas from 10/spl times/10 /spl mu/m/sup 2/ to 20/spl times/600 /spl mu/m/sup 2/ were fabricated. In the best stacks, the difference in the critical currents of two junctions was less than 3%. Clear voltage locking effects were observed in current-voltage (I-V) characteristics.>