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Communications in Theoretical Physics

Geometric Phase and Bose–Einstein Condensate

Wang ZhengChuan, Bo‐Zang Li

Published Apr 30, 2000• 1 citation
Publisher

Abstract

In this work the Auger electron spectroscopy (AES) sputter depth profiling technique for binary solids has been discussed and exemplified by its application to reveal composition profiles generated in Ni(0.7)Mo(0.3) by pre-bombardment with Ar(+)-ions of 1 through 5 keV. Two element-specific. surface-sensitive Auger transitions are employed to monitor the surface composition. The Linear correlation between the Auger intensities provides the relative sensitivity factor for the quantification of AES data. A model proposed by Ho and co-workers is reformulated for the conversion of the measured temporal variation of surface concentration C(s)(t) into the original composition profile C(x). Radiation-enhanced diffusion caused by high-energy ion bombardment turns sputter depth profiling into an underdetermined inverse problem. On the other hand, experiments show that the strong preferential sputtering effect accompanying low-energy sputter may veil the detail of the composition profiles. An intermediate energy between about 100 and 300 eV is found to be optimum for the purpose of sputter depth profiling. (C) 2000 published by Elsevier Science B.V. All rights reserved.

DOI
10.1088/0253-6102/33/3/477

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In this work the Auger electron spectroscopy (AES) sputter depth profiling technique for binary solids has been discussed and exemplified by its application to reveal composition profiles generated in Ni(0.7)Mo(0.3) by pre-bombardment with Ar(+)-ions of 1 through 5 keV. Two element-specific. surface-sensitive Auger transitions are employed to monitor the surface composition. The Linear correlation between the Auger intensities provides the relative sensitivity factor for the quantification of AES data. A model proposed by Ho and co-workers is reformulated for the conversion of the measured temporal variation of surface concentration C(s)(t) into the original composition profile C(x). Radiation-enhanced diffusion caused by high-energy ion bombardment turns sputter depth profiling into an underdetermined inverse problem. On the other hand, experiments show that the strong preferential sputtering effect accompanying low-energy sputter may veil the detail of the composition profiles. An intermediate energy between about 100 and 300 eV is found to be optimum for the purpose of sputter depth profiling. (C) 2000 published by Elsevier Science B.V. All rights reserved.
Modified Bohm’s formalism was applied to solve the problem of abstruse layer depth profiles measured by the Auger electron spectroscopy technique in real physical systems. The desorbed carbon/passive layer on an NiTi substrate and the adsorbed oxygen/ surface of an NiTi alloy were studied. It was shown that the abstruse layer profiles can be converted to real layer structures using the modified Bohm’s theory, where the quantum potential is due to the Auger electron effect. It is also pointed out that the stationary probability density predicts the multilayer structures of the abstruse depth profiles that are caused by the carbon desorption and oxygen adsorption processes. The criterion for a kind of break or “cut” between the physical and unphysical multilayer systems was found. We conclude with the statement that the physics can also be characterised by the abstruse measurement and modified Bohm’s formalism.
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Electric-field noise near ion-trap electrodes limits motional coherence and represents a key obstacle to scaling trapped-ion quantum systems. Here, we investigate how in situ Ar+ sputtering modifies motional heating and dephasing in multi-material surface-electrode traps. Trapped ions serve as local probes of electric-field fluctuations before and after controlled sputtering cycles. The data reveal a non-monotonic dependence of both the dephasing rate and the electric-field noise on the extent of Ar+ sputtering, with coherence initially improving while heating rates increase, followed by a reversal at longer exposures. This behavior highlights the intricate balance between beneficial surface cleaning and detrimental structural modification, driven by changes in surface morphology, redeposition of sputtered material, and diffusion on the surface, underscoring the complex interplay between surface composition and motional stability in multi-material electrode systems. Post-treatment scanning electron microscopy and energy-dispersive X-ray spectroscopy confirm significant modification of the multilayer structure. Technical noise was independently verified to be well below the observed levels. These findings indicate that in situ sputtering modifies surface properties in ways that can either mitigate or enhance electric-field noise, underscoring the need for precise control of material interfaces in next-generation ion-trap architectures.