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IEEE Transactions on Terahertz Science and Technology

2.7 THz Balanced Waveguide HEB Mixer

Faouzi M. Boussaha, Jonathan H. Kawamura, J. A. Stern, Cecile Jung-Kubiak

Published Jul 30, 2014• 23 citations
Publisher

Abstract

We report on the development of a waveguide-based balanced superconducting mixer for operation near 2.7 THz. The mixer employs a pair of NbN hot-electron bolometers defined on 6 μm-thick silicon substrate that follows a 90°hybrid coupler. To produce the critical structures of the coupler and waveguide embedding circuit, we have utilized silicon micromachining techniques based on deep reactive ion etching. Operating near 4.2 K bath temperature, we have measured a minimum uncorrected DSB receiver noise temperature of less than 2000 K using Callen-Welton formula and local oscillator sideband noise rejection better than 13±3 dB at 2.74 THz. The concept is suitable for building arrays, readily scalable for higher frequencies up 5 THz, and could accommodate other mixer technologies, such as room-temperature Schottky diode mixers.

DOI
10.1109/tthz.2014.2342507

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We report on the development of a waveguide-based balanced superconducting mixer for operation near 2.7 THz. The mixer employs a pair of NbN hot-electron bolometers defined on 6 μm-thick silicon substrate that follows a 90°hybrid coupler. To produce the critical structures of the coupler and waveguide embedding circuit, we have utilized silicon micromachining techniques based on deep reactive ion etching. Operating near 4.2 K bath temperature, we have measured a minimum uncorrected DSB receiver noise temperature of less than 2000 K using Callen-Welton formula and local oscillator sideband noise rejection better than 13±3 dB at 2.74 THz. The concept is suitable for building arrays, readily scalable for higher frequencies up 5 THz, and could accommodate other mixer technologies, such as room-temperature Schottky diode mixers.
We report on a low noise waveguide-based heterodyne mixer utilizing a superconductiang NbN hot electron bolometer (HEB) operating near 2.7 THz. The mixer is an NbN nano-bridge integrated with a gold bowtie planar antenna on an ultra-thin siliconsubstrateof 23 mthickness.Toproducethewaveguide embedding circuit for use at such a high frequency, we adopted a novel approach combining UV-lithography and micro-plating techniques. The mixer response agreed precisely with model predictions, and we measured a minimum uncorrected DSB receiver noise temperature of 965 K at an LO frequency of 2.74 THz.
We report on a low noise waveguide-based heterodyne mixer utilizing a superconductiang NbN hot electron bolometer (HEB) operating near 2.7 THz. The mixer is an NbN nano-bridge integrated with a gold bowtie planar antenna on an ultra-thin silicon substrate of ~ 2-3 μm thickness. To produce the waveguide embedding circuit for use at such a high frequency, we adopted a novel approach combining UV-lithography and micro-plating techniques. The mixer response agreed precisely with model predictions, and we measured a minimum uncorrected DSB receiver noise temperature of 965 K at an LO frequency of 2.74 THz.
In this paper, we report about the development, fabrication, and characterization of a balanced waveguide hot electron bolometer (HEB) receiver for the Atacama Pathfinder EXperiment telescope covering the frequency band of 1.25–1.39 THz. The receiver uses a quadrature balanced scheme and two HEB mixers, fabricated from 4- to 5-nm-thick NbN film deposited on crystalline quartz substrate with an MgO buffer layer in between. We employed a novel micromachining method to produce all-metal waveguide parts at submicrometer accuracy (the main-mode waveguide dimensions are 90$\,\times\,180180180\mu{\hbox{m}}$). We present details on the mixer design and measurement results, including receiver noise performance, stability and “first-light” at the telescope site. The receiver yields a double-sideband noise temperature averaged over the RF band below 1200 K, and outstanding stability with a spectroscopic Allan time more than 200 s.
In this paper, we present the development of the waveguide niobium titanium nitride (NbTiN) superconducting hot electron bolometer (HEB) mixers, cryogenically cooled by a 4 K close-cycled refrigerator. The NbTiN thin film is formed on a crystalline quartz substrate by sputtering an NbTi target with the Ar and N2gas at room temperature. The HEB mixer element is fabricated by using the 12 nm NbTiN film, and is mounted on a waveguide block. Measurement of a Fourier transform spectrometer shows that the response of the mixer is centered near 810 GHz with a bandwidth of about 500 GHz. The uncorrected DSB receiver noise temperature is measured to be 500 K, and the noise bandwidth is to be 1.4 GHz at 810 GHz. The present result shows that a good noise performance can be obtained for the NbTiN HEB mixer even with a relatively thick film (12 nm) fabricated at the room temperature.
Superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers at terahertz (THz) have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on high-resistivity Si substrates. Double sideband (DSB) receiver noise temperatures of 698 K at 0.65 THz, 904 K at 1.6 THz, 1026 K at 2.5 THz and 1386 K at 3.1 THz have been obtained at 4.2 K without corrections and using changeable input local oscillation (LO) power to eliminate the affects of direct detection and instability of the LO power. The excess quantum noise factor beta of about 4 has been estimated using a quantum noise model.
We present a characterization of a 1.5 THz waveguide niobium titanium nitride (NbTiN) superconducting hot electron bolometer (HEB) mixer which can be pumped by a commercial solid state tunable local oscillator (LO) source. The NbTiN HEB mixer is made from a 12 nm thick NbTiN thin film deposited on a quartz substrate at room temperature. A gold electrode is formed in situ on the NbTiN thin film without breaking vacuum to ensure good contact. The uncorrected DSB receiver noise temperature is measured to be 1700 K at 1.5 THz, whereas the mixer noise temperature is derived to be 1000 K after corrections for losses of the input optics and the intermediate frequency (IF) amplifier chain. The required LO power absorbed in the HEB mixer is evaluated to be 340 nW by using an isothermal technique. The IF gain bandwidth is supposed to be about 1.3 GHz or higher. The present results show that good performance can be obtained at 1.5 THz even with a relatively thick NbTiN film (12 nm), as in the case of 0.8 THz. In order to investigate the cooling mechanism of our HEB mixers, we have conducted performance measurements for a few HEB mixers with different microbridge sizes both at 1.5 and 0.8 THz. The noise performance of the NbTiN HEB mixers is found to depend on the length of the NbTiN microbridge. The shorter the microbridge is, the lower the receiver noise temperature is. This may imply a contribution of the diffusion cooling in addition to the phonon cooling.