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電子情報通信学会技術研究報告. ED, 電子デバイス

Fabrication of semiconductor device for double-slit experiment and hot-electron interference

Yasuyuki Miyamoto, Hiroo Hongo, Michihiko Suhara, Kazuhito Furuya

Published Oct 11, 1996• 0 citations
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American Journal of Physics•Aug 1, 1989•1 citation
We have carried out Young's double-slit experiment for the hot-electron wave in man-made semiconductor structures with a 25-nm-space double slit in an InP layer buried within GaInAs, a 190-nm-thick GaInAsP hot-electron wave propagation layer, and a collector array of 80 nm pitch. At 4.2 K, dependences of the collector current on the magnetic field were measured and found to agree clearly with the double-slit interference theory. The present results show evidence for the wave front spread of hot electrons using the three-dimensional state in materials, for the first time, and the possibility of using top-down fabrication techniques to achieve quantum wave front control in materials.
This is a detailed description of the first definite observation of the double-slit interference of a hot electron in a solid. The observation has been achieved by fabricating a double-slit with a 12 nm opening and a 25 nm center-to-center distance and a detection electrode with a 40 nm width. Various inspections are made theoretically to confirm the double-slit diffraction/interference. This achievement will open the door to the creation of solid-state devices with new functions based on the wave nature of electrons.
We report a double-slit experiment of hot electrons in a semiconductor under a magnetic field. The pitch of the double slit buried in the semiconductor is 40 nm and the electron energy is of the order of 100 meV. By applying a magnetic field, the change in current that passes through the slits is observed at the segmented collector. The measured current shows a clear minimum around B=0 T, with this behavior agreeing with a theoretical calculation based on double-slit interference. Quantitative estimation is consistent with this order of current variation. We think that these results show evidence of the observation of hot electron interference by a double slit in a semiconductor.