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Microelectronic Engineering

Hot electron interference by 40 nm-pitch double slit buried in semiconductor

Hiroo Hongo, Yasuyuki Miyamoto, M. Suhara, K. Furuya

Published Feb 1, 1997• 0 citations
Publisher
DOI
10.1016/s0167-9317(96)00084-6

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Physical Review Letters•Nov 19, 2003•10 citations
We report a double-slit experiment of hot electrons in a semiconductor under a magnetic field. The pitch of the double slit buried in the semiconductor is 40 nm and the electron energy is of the order of 100 meV. By applying a magnetic field, the change in current that passes through the slits is observed at the segmented collector. The measured current shows a clear minimum around B=0 T, with this behavior agreeing with a theoretical calculation based on double-slit interference. Quantitative estimation is consistent with this order of current variation. We think that these results show evidence of the observation of hot electron interference by a double slit in a semiconductor.
We have carried out Young's double-slit experiment for the hot-electron wave in man-made semiconductor structures with a 25-nm-space double slit in an InP layer buried within GaInAs, a 190-nm-thick GaInAsP hot-electron wave propagation layer, and a collector array of 80 nm pitch. At 4.2 K, dependences of the collector current on the magnetic field were measured and found to agree clearly with the double-slit interference theory. The present results show evidence for the wave front spread of hot electrons using the three-dimensional state in materials, for the first time, and the possibility of using top-down fabrication techniques to achieve quantum wave front control in materials.