Applied Physics Letters
A 40-nm-pitch double-slit experiment of hot electrons in a semiconductor under a magnetic field
Hiroo Hongo, Yasuyuki Miyamoto, Kazuhito Furuya, Michihiko Suhara
Abstract
We report a double-slit experiment of hot electrons in a semiconductor under a magnetic field. The pitch of the double slit buried in the semiconductor is 40 nm and the electron energy is of the order of 100 meV. By applying a magnetic field, the change in current that passes through the slits is observed at the segmented collector. The measured current shows a clear minimum around B=0 T, with this behavior agreeing with a theoretical calculation based on double-slit interference. Quantitative estimation is consistent with this order of current variation. We think that these results show evidence of the observation of hot electron interference by a double slit in a semiconductor.