Fabrication and process characterization of atom transistor chips
Ho‐Chiao Chuang, Evan A. Salim, Vladan Vuletić +2 more
This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times107A/cm2. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.
International Conference on Solid-State Sensors, Actuators and Microsystems•Jun 1, 2009•0 citations