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Fabrication of gold wires for atom chips by electrochemical deposition: a comparative study

G. Lewis, Z. Moktadir, Gollasch, Carsten O., Michael D. Kraft, Michael Trupke, S. Eriksson, Edward A. Hinds

Published Sep 1, 2005• 0 citations
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In this work, we report the development and characterization of an atom chip for magnetic trapping of cold 87Rb atoms. For fabrication of the atom chip, a silicon substrate was used after depositing an insulating layer of silica (SiO2) on it. An adhesive chromium layer was further deposited on this substrate before the deposition of the final layer of gold. On this gold coated substrate, a z-shaped gold wire (cross section, 500×2.5μm2) was fabricated by a photo-chemical machining method. The chip wire was tested for current–voltage characteristics for its reliable operation in magnetic trapping. The atoms from an U-magneto-optical trap, after optical pumping, were directly trapped in the magnetic trap of the atom chip.
We have fabricated and tested an atom chip that operates as a matter wave interferometer. In this communication we describe the fabrication of the chip by ion-beam milling of gold evaporated onto a silicon substrate. We present data on the quality of the wires, on the current density that can be reached in the wires and on the smoothness of the magnetic traps that are formed. We demonstrate the operation of the interferometer, showing that we can coherently split and recombine a Bose–Einstein condensate with good phase stability.
We investigate theoretically the heating rate and spin flip lifetimes due to near-field noise for atoms trapped close to layered superconducting structures with the superconductor in the Meissner state. In particular, we compare the case of a gold layer deposited above a superconductor with the case of a bare superconductor. We study a niobium-based and a YBa 2 Cu 3 O 7 − x (YBCO)-based chip. For both niobium and YBCO chips at a temperature of 4.2 K, we find that the deposition of the gold layer can have a significant impact on the heating rate and spin flip lifetime, as a result of the increase of the near-field noise. At a chip temperature of 77 K, this effect is less pronounced for the YBCO chip.