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Bulletin of the American Physical Society

Advanced ion trap structures with integrated tools for qubit manipulation

Jonathan David Sterk, Francisco Benito, Craig Robert Clark, Raymond A. Haltli, Clark Highstrete, Christopher Nordquist, Sean Scott, J. Stevens, Boyan Tabakov, Christopher P. Tigges, David L. Moehring, Daniel Stick, Matthew G. Blain

Published Jun 7, 2012• 0 citations
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Ion trap system is one of the main quantum systems to realize quantum computation and simulation. Various ion trap research groups worldwide jointly drive the continuous enrichment of ion trap structures, and develop a series of high-performance three-dimensional ion trap, two-dimensional ion trap chip, and ion traps with integrated components. The structure of ion trap is gradually developing towards miniaturization, high-optical-access and integration, and is demonstrating its outstanding ability in quantum control. Ion traps are able to trap increasingly more ions and precisely manipulate the quantum state of the system. In this review, we will summarize the evolution history of the ion trap structures in the past few decades, as well as the latest advances of trapped-ion-based quantum computation and simulation. Here we present a selection of representative examples of trap structures. We will summarize the progresses in the processing technology, robustness and versatility of ion traps, and make prospects for the realization of scalable quantum computation and simulation based on ion trap system.
Ions trapped in a quadrupole Paul trap have been considered one of the strong physical candidates to implement quantum information processing. This is due to their long coherence time and their capability to manipulate and detect individual quantum bits (qubits). In more recent years, microfabricated surface ion traps have received more attention for large-scale integrated qubit platforms. This paper presents a microfabrication methodology for ion traps using micro-electro-mechanical system (MEMS) technology, including the fabrication method for a 14 µm-thick dielectric layer and metal overhang structures atop the dielectric layer. In addition, an experimental procedure for trapping ytterbium (Yb) ions of isotope 174 (174Yb+) using 369.5 nm, 399 nm, and 935 nm diode lasers is described. These methodologies and procedures involve many scientific and engineering disciplines, and this paper first presents the detailed experimental procedures. The methods discussed in this paper can easily be extended to the trapping of Yb ions of isotope 171 (171Yb+) and to the manipulation of qubits.