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Optics & Laser Technology

An integrated laser system for manipulating trapped ions qubits

Weiran Ye, Jin‐Ming Cui, Yan Chen, Yi-Long Chen, Rui-Rui Li, Yun‐Feng Huang, Chuan‐Feng Li, Guang‐Can Guo

Published Mar 7, 2025• 1 citation
Publisher
DOI
10.1016/j.optlastec.2025.112694

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Fraunhofer IOF presents a laser-optical setup that enables the parallel manipulation of ions in an ion-trap for quantum computer. The unit creates focus spots less than 2 microns wide that allow for addressing ions in a chain, having a variable pitch around 5 micron. The implemented and individual movement of each focus creates versatile qubit manipulation on the single level, is demonstrated for 10 ions in a row and can be scaled up to ca. 50 ions easily. Also a roadmap towards compact designs by micro-optics based system integration is derived.
We describe the design, fabrication, and testing of a surface-electrode ion trap, which incorporates microwave waveguides, resonators, and coupling elements for the manipulation of trapped ion qubits using near-field microwaves. The trap is optimised to give a large microwave field gradient to allow state-dependent manipulation of the ions' motional degrees of freedom, the key to multi-qubit entanglement. The microwave field near the centre of the trap is characterised by driving hyperfine transitions in a single laser-cooled 43Ca+ ion.
Ions trapped in a quadrupole Paul trap have been considered one of the strong physical candidates to implement quantum information processing. This is due to their long coherence time and their capability to manipulate and detect individual quantum bits (qubits). In more recent years, microfabricated surface ion traps have received more attention for large-scale integrated qubit platforms. This paper presents a microfabrication methodology for ion traps using micro-electro-mechanical system (MEMS) technology, including the fabrication method for a 14 µm-thick dielectric layer and metal overhang structures atop the dielectric layer. In addition, an experimental procedure for trapping ytterbium (Yb) ions of isotope 174 (174Yb+) using 369.5 nm, 399 nm, and 935 nm diode lasers is described. These methodologies and procedures involve many scientific and engineering disciplines, and this paper first presents the detailed experimental procedures. The methods discussed in this paper can easily be extended to the trapping of Yb ions of isotope 171 (171Yb+) and to the manipulation of qubits.