Ultrafast switching based on field optical bistability in nano-film of semiconductor
Vyacheslav A. Trofimov, Vladimir A. Egorenkov, M.M. Loginova
Using computer simulation, we show a possibility of ultrafast switching between stable states of an optical bistable device based on nano-film of semiconductor. Optical bistability occurs because of nonlinear dependence of semiconductor absorption coefficient on electric field potential. Electric field is induced by a laser pulse due to charged particles generation. The main feature of this bistable element is low absorption energy, which is necessary for switching, in comparison with bistable element based on other physical mechanism of laser energy absorption. For computer simulation of a problem under consideration a new finite-difference scheme is proposed using the original iterative process.
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Sep 16, 2016•2 citations