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Springer series in electrophysics

170ps Fast Switching Response and 2Gbps Optical Memory Operation of Bistable Laser Diodes with Electrically Controlled Saturable Absorber

Akihisa Tomita, S. Ohkouti, Akira Suzuki

Published Jan 1, 1996• 1 citation
Publisher
DOI
10.1007/978-3-642-73388-8_17

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Optics Express•Jul 15, 2008•85 citations
Abstract To realize a high‐speed time division optical switching network, optical bistability devices including optical memory are important. In this paper, a bistable laser‐diode memory made of an APD, an LD and an optical feedback circuit is studied from the point of low set power and high speed. To attain a low set power, the effect of spontaneous emission of an LD cannot be neglected. Therefore, the input and output characteristics of an optical memory are studied including the spontaneous emission coefficient. Next, the response speed at a low input power is studied and the relationship between the response speed and the optical memory design parameters is derived. The input‐output characteristics and the response speed are verified with an experimental circuit. Finally, a high‐speed optical memory with a low set power is fabricated. The results of operating experiments of optical memories in an optical switching network are described.
Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.