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Laser Physics Letters

Enhanced refractive index without absorption via both coherent and incoherent fields in a semiconductor quantum well

Biqi Qian, Zhiping Wang, Tao Shui, Benli Yu

Published May 14, 2015• 2 citations
Publisher

Abstract

We investigate the absorptive–dispersive properties of a weak probe field in a ladder-type semiconductor quantum well. It is found that the enhanced positive or negative refraction index without absorption can be easily obtained in this solid-state system. Our scheme may provide some new possibilities for technological applications in solid-state optical communication.

DOI
10.1088/1612-2011/12/6/065901

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AIP conference proceedings•Jan 1, 2024•1 citation
We investigate the absorptive–dispersive properties of a weak probe field in a ladder-type semiconductor quantum well. It is found that the enhanced positive or negative refraction index without absorption can be easily obtained in this solid-state system. Our scheme may provide some new possibilities for technological applications in solid-state optical communication.
The dispersive-absorptive optical properties of a weak probe field are investigated based on quantum coherence and interference in a Landau-quantized graphene structure. It is found that an enhanced refractive index with vanishing absorption can be obtained in this structure through proper adjusting the controlling parameters of the system. The switching between superluminal and subluminal light propagation is also discussed. Our scheme can be employed in real experiments to develop new types of nanoelectronic devices for realizing all-optical switching process and can have practical application in dispersion compensation and solid-state quantum communication.
We propose coherent control and enhancement of the refractive index with zero absorption in an n-type asymmetric double quantum well using intersubband transitions. These effects are caused by quantum coherence and interference whereby a strong infrared laser mixes upper conduction subbands of an intersubband transition with an auxiliary subband. In the ${\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}/\mathrm{A}\mathrm{l}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ system considered here, an approximately 10% enhancement of the refractive index accompanied with zero absorption occurs at 10.5 \ensuremath{\mu}m, when the system is driven by a 6.2-\ensuremath{\mu}m laser field with an intensity of \ensuremath{\sim}1 MW/cm2{\mathrm{M}\mathrm{W}/\mathrm{c}\mathrm{m}}^{2}MW/cm2. The interplay between quantum coherence and electron population dynamics not only causes an enhancement of refractive index similar to that in atomic systems, but can also induce both low positive and negative group velocities.
Coherent phenomena based on lasing without inversion (LWI), electromagnetically induced transparency (EIT) and enhanced index of refraction are due to the interaction of light with matter. Quite recently, the coherent phenomenon of spontaneously generated coherence (SGC) has emerged as a significant one in the study of several semiconductor nanostructures. In this article, we examine the linear optical properties in the EIT regime for a three-level V-type semiconductor quantum wells (QWs) in the presence of an incoherent pump field under the SGC effect. It is shown that for a suitable choice of a SGC parameter and an incoherent pump field, the linear absorption substantially changes into a probe field gain and at the same time modifies the dispersive properties of the medium.