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Indian Journal of Science and Technology

Overall Noise Analysis for Transisition Edge Sensor at Optical and Infra-Red Wavelengths

Venkata Naga Vamsi Annepu, Annepu Bhujanga Rao

Published Dec 14, 2015• 2 citations
Publisher

Abstract

Transition-Edge Sensors (TESs) are the most promising devices as single photon detectors in the visible and infrared range. In particular ultra-fast TESs with few hundred ns response time and high quantum efficiency find application in different fields like quantum optics, quantum metrology and quantum information. In this work, the main objective is to measure the noise effect on the performance of the TESs when operated at visible and infrared wavelengths as the TESs performance depends on the sensor parameters and also on the noise level. The noise analysis is done by experimentally calculating the noise generated by the different block of the Single quantum interface device and to the TES. We have also seen from our numerical analysis that the overall noise of the system is 1 × 10 12 − nV / Hz . The above estimate is valid for the low-temperature steady –state biasing conditions of our TES device. Keywords: Gain of Op-Amp, Photo Detectors, Single Quantum Interference Device, Tank Circuit

DOI
10.17485/ijst/2015/v8i35/74692

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Transition-edge sensors (TESs) are very versatile superconducting devices used to detect radiation from gamma-rays to visible and submillimeter. The intrinsic capability to measure the energy of the absorbed photons with very high energy resolution and the related possibility to resolve the number of incident photons distinguish photon-number resolving (PNR) devices from any other photon detectors. PNR detectors are fundamental for the measurement of the photon-number distribution of singlephoton emitters and for the progress of quantum information technology and quantum metrology. By reducing the active area of TESs for visible-NIR light from typical values of 10-10m2toward 10-12m2and by increasing the TES operating temperature, we should be able to combine the high energy resolution permitted by very low heat capacity with fast response time. To support the future design and development of this new type of detector, in this work we compare experimental data with circuit simulation results based on the two-fluid theory.
Transition edge sensors (TESs) with high energy resolution (ΔE) at telecommunication wavelengths have been realized in the last years for application to experiments of quantum optics and quantum information. In these fields, lasers with repetition rate of the order of 50 MHz are usually applied and hence TES with recovery times lower than 20 ns would be desirable. To this aim, Ti TESs with area ranging between 1 μm × 1 μm and 2 μm × 2 μm are fabricated and characterized, to study the effects of the different sizes of active areas and critical temperatures on the energy resolutions and on the response times. Titanium TESs have been fabricated by thermal evaporation and Electron Beam Lithography technique on Si/SiN substrates, and they have been electrically and optically characterized. The experimental data have been analyzed and correlated to the detector geometrical parameters. The superconducting transitions of TESs with areas down to 1 μm × 1 μm result to be affected by lateral proximity effects of Nb wirings. Ti TESs with critical temperature of 470 mK show response time of about 150 ns and energy resolution of 0.16 eV.
Many quantum-information applications require high-efficiency, low-noise, single-photon detectors that operate at visible and near-infrared wavelengths. The tunable superconducting critical temperature and anomalously low electron-phonon coupling of tungsten make it a suitable material for the fabrication of transition-edge sensors (TESs) that meet these requirements. The quantum efficiency of a typical tungsten TES detector, intrinsically around 15% at 1550 nm, can be increased by placing the tungsten detector in a resonant cavity, but the performance of a device embedded in a cavity has not been tested previously. We demonstrate that the presence of the cavity does not adversely affect the sensitivity or response time, and we report on the device characteristics of a new generation of tungsten TESs with greater than 80% quantum efficiency at 1550 nm.
Abstract In photonic quantum computing and quantum information processing, photon number resolution is crucial for generating highly non-classical quantum states. Superconducting transition-edge sensors (TESs) are considered one of the most effective photon number-resolving detectors for this purpose. However, the current timing properties of TESs, such as timing jitter (a few ns) and recovery time (several hundred ns), are insufficient, limiting the operational speed of quantum applications. To address the potential for improving TES timing performance, we have proposed an improved calculation to derive TES timing jitter. Our calculations including the effect of the SQUID noise indicate that expanding the electrical bandwidth of the external voltage amplifier and optimizing the inductance to match that bandwidth, can significantly improve timing jitter. According to our model, timing jitter 1 ns FWHM is achievable with an input inductance of 0.35 nH and an electrical bandwidth of 1 GHz. Additionally, we have shown that with our TES and SQUID parameters, the lowest achievable timing jitter is approximately 0.71 ns FWHM. Achieving an even lower jitter would require a redesign aimed at further reducing the SQUID noise.