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HEZ §uperconductive Nb t-Electron Mixer

Boris S. Karasik, B. Bumble

Published Jan 1, 1997• 0 citations
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Abstract

AbstracF-we report on the development of a quasioptical Nb hot-electron bolometer mixer for a 2.5 THz heterodyne receiver. The devices are fabricated from a 12 nm thick Nb film, and have a 0.30 ~mx0.15 pm in-plane size, thus exploiting diffusion as the electron cooling mechanism. The rf coupling was provided by a twin-slot planar antenna on an elliptical Si lens. A specially designed 2.5 THz system, using a laser as local oscillator (LO), with rf hotkold loads enclosed in vacuum to avoid atmospheric absorption, was used in the experiment. The experimentally measured double sideband (DSB) noise temperature of the receiver was as low as 53000 K, with an estimated mixer noise temperature of = 750 K. These results demonstrate the operation of the diffusion-cooled bolometer mixer above

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Softwaretechnik-Trends•Jan 1, 1999•20 citations
AbstracF-we report on the development of a quasioptical Nb hot-electron bolometer mixer for a 2.5 THz heterodyne receiver. The devices are fabricated from a 12 nm thick Nb film, and have a 0.30 ~mx0.15 pm in-plane size, thus exploiting diffusion as the electron cooling mechanism. The rf coupling was provided by a twin-slot planar antenna on an elliptical Si lens. A specially designed 2.5 THz system, using a laser as local oscillator (LO), with rf hotkold loads enclosed in vacuum to avoid atmospheric absorption, was used in the experiment. The experimentally measured double sideband (DSB) noise temperature of the receiver was as low as 53000 K, with an estimated mixer noise temperature of = 750 K. These results demonstrate the operation of the diffusion-cooled bolometer mixer above
We report on the development of a quasioptical Nb hot-electron bolometer mixer for a 2.5 THz heterodyne receiver. The devices are fabricated from a 12 nm thick Nb film, and have a 0.30 /spl mu/m/spl times/0.15 /spl mu/m in-plane size, thus exploiting diffusion as the electron cooling mechanism. The rf coupling was provided by a twin-slot planar antenna on an elliptical Si lens. A specially designed 2.5 THz system, using a CO/sub 2/-pumped FIR laser as local oscillator (LO), with rf hot/cold loads enclosed in vacuum to avoid atmospheric absorption, was used in the experiment. The experimentally measured double sideband (DSB) noise temperature of the receiver was as low as /spl les/3000 K, with an estimated mixer noise temperature of /spl ap/750 K. These results demonstrate the operation of the diffusion-cooled bolometer mixer above 2 THz.
The noise performance of a Nb hot-electron bolometer mixer at 2.5 THz has been investigated. The devices are fabricated from a 12-nm-thick Nb film, and have a 0.30 μm×0.15 μm in-plane size, thus exploiting diffusion as the electron cooling mechanism. The rf coupling was provided by a twin-slot planar antenna on an elliptical Si lens. The experimentally measured double sideband noise temperature of the receiver was as low as 2750±250 K with an estimated mixer noise temperature of ≈900 K. The mixer bandwidth derived from both noise bandwidth and IF impedance measurements was ≈1.4 GHz. These results demonstrate the low-noise operation of the diffusion-cooled bolometer mixer above 2 THz.
We report on the development of quasioptical Nb hot-electron bolometer mixers for heterodyne receivers operating at 1 THz 3 THz. The devices have submicron in-plane sizes, thus exploiting diffusion as the electron cooling mechanism. Quasioptical mixer circuits have been developed with planar double-dipole or twin-slot antennas. The measured (DSB) receiver noise temperatures are 1670 K at 1.1 THz, with an estimated mixer noise temperature of approximately equals 1060 K, and 2750 K at 2.5 THz, with an estimated mixer noise temperature of approximately equals 900 K. The IF bandwidth is found to scale as the length-squared, and bandwidths as high as 8 GHz have been measured. These results demonstrate the low-noise, broadband operation of the diffusion-cooled bolometer mixer over a wide range of far-infrared wavelengths.
The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.