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IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS)

Semiconductor Avalanche Diode Detectors for Quantum Cryptography

Gerald S. Buller, Saverio Pellegrini, Ryan E. Warburton, Ng J. S., L. J. J. Tan, Andrey B Krysa, J. P. R. David, S. Cova

Published Jan 1, 2006• 6 citations
OpenAlex

Abstract

Advances in semiconductor single photon avalanche diode detectors have enabled an expansion in photon-counting application areas in the near-infrared. Of particular relevance is the application area of quantum key distribution in which secure encryption keys can be shared between users using information derived from streams of encoded single-photons. We report progress towards the objective \nof a practical, high efficiency detector at the strategically important 1550nm wavelength band.

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Single-photon detectors for practical quantum cryptography

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The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.

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Two approaches to single-photon detection at telecom wavelengths have been investigated, using semiconductor and superconductor technologies. The low temperature operation of free-running InGaAs/InP negative feedback avalanche diodes (NFADs) was studied, demonstrating that they can operate with an extremely low dark count rate, which opens up a host of new applications. Secondly, superconducting nanowire single-photon detectors (SNSPDs) based on amorphous materials were developed, fabricated and characterized. These detectors are highly attractive because they can achieve excellent attributes simultaneously, such as high efficiency, low noise, good temporal resolution, no afterpulsing and high count rates. Finally, it was demonstrated that the use of NFADs can enable record distance quantum key distribution (QKD) over 307 km of optical fiber. A next generation QKD system has been proposed and numerically analyzed, aiming at extending the record distance by an additional 100 km and increasing the state-of-the-art secret key rate by over an order of magnitude.

•Jan 1, 2016•0 citations
Advances in semiconductor single photon avalanche diode detectors have enabled an expansion in photon-counting application areas in the near-infrared. Of particular relevance is the application area of quantum key distribution in which secure encryption keys can be shared between users using information derived from streams of encoded single-photons. We report progress towards the objective \nof a practical, high efficiency detector at the strategically important 1550nm wavelength band.
The application of quantum key distribution (QKD) has raised particular demands for single-photon detectors. One of the most promising candidates at the low-loss optical fibre communications windows is the planar geometry InGaAs/InP single-photon avalanche diode. These detectors have been modelled, fabricated and characterised at 1.55 µm wavelength. Their performance in terms of single-photon detection efficiency, dark count rate, timing jitter and afterpulsing behaviour are reported and compared with the best commercially available, linear multiplication avalanche photodiodes operated in Geiger-mode. Their use in the application of QKD is discussed.
The technology of quantum cryptography, based on the quantum properties of light, allows a random sequence of bits to be transmitted over an unprotected communication channel in such a way that an intruder's interference in the transmission process generates additional noise in the channel and is detected by legitimate users. One of the important elements of the quantum key distribution system is a single photon detector. In this work proposed quantum cryptographic system that generates only an orthogonal basis (vertical and horizontal) has one semiconductor diode laser used to generate information and synchronization photons and functional diagram of the device for registration of single photons. The developed device allows increasing the quantum efficiency of registration up to 45%.
The implementation and commercialization of quantum cryptography technologies have to face some challenges related to the development of single-photon detectors operating at 1550 nm. The main requirements are: i) high detection efficiency; ii) low noise; iii) high count rate; iv) low timing jitter. Different technologies are currently available for single-photon detection at 1550 nm, but semiconductor devices (like Single-Photon Avalanche Diode, SPAD) offer a photon detection efficiency that is inherently higher than any photocathode employed in vacuum tube detectors. Additionally InGaAs/InP SPADs can detect single photons at 1550 nm with low noise when moderately cooled by means of thermo-electric coolers. Consequently, InGaAs/InP SPAD can be the enabling technology of practical quantum key distribution (QKD) systems, provided that the maximum count rate is increased above 1 Mcps. The main limit is the afterpulsing effect that usually sets too long (< 10 μs) a hold-off time after each avalanche ignition. We present the developments achieved in InGaAs/InP SPAD device design, fabrication technology and front-end electronics, aimed at decreasing the afterpulsing effect, while not impairing photon detection efficiency and timing jitter. The new InGaAs/InP SPADs provide count rates higher than 1 Mcps and temporal response with 60 ps Full-Width at Half Maximum and very short (30 ps time constant) tail. The front-end electronics includes a wide-band pulse generator able to gate the SPAD up to 133 MHz repetition rate. Eventually, a fast avalanche-quenching scheme minimizes quenching time to less than 1 ns, thus effectively reducing afterpulsing by decreasing the total charge flowing through the junction.
A brief overview is given of single photon detector performance requirements for quantum cryptography applications. The analysis is made with respect to restrictions necessary to secure the quantum key distribution channel. InGaAs/InP avalanche photodiode performance is analysed for single photon counting at 1550 nm. Quantum efficiency, dark current and afterpulsing probability (for times up to 100μs after an initial avalanche) are studied in a wider temperature range than previously reported (0deg; C to –80deg;C). We show that photon counting is a bottle-neck in current quantum key distribution systems and provides the source for future performance improvement.
Two approaches to single-photon detection at telecom wavelengths have been investigated, using semiconductor and superconductor technologies. The low temperature operation of free-running InGaAs/InP negative feedback avalanche diodes (NFADs) was studied, demonstrating that they can operate with an extremely low dark count rate, which opens up a host of new applications. Secondly, superconducting nanowire single-photon detectors (SNSPDs) based on amorphous materials were developed, fabricated and characterized. These detectors are highly attractive because they can achieve excellent attributes simultaneously, such as high efficiency, low noise, good temporal resolution, no afterpulsing and high count rates. Finally, it was demonstrated that the use of NFADs can enable record distance quantum key distribution (QKD) over 307 km of optical fiber. A next generation QKD system has been proposed and numerically analyzed, aiming at extending the record distance by an additional 100 km and increasing the state-of-the-art secret key rate by over an order of magnitude.