Theoretical Review of a new approach of Lithography at nm Resolution
JianGuang Xian, FuWei Zhan
This article theoretically reviews the new potential offered for photolithography by the combination of 2 elements: EIT (Electromagnetically Induced Transparency) and SMLM (Single Molecule Localization Microscopy), lithography with nm resolution is expected, with outstanding advantage. Light resonant with atomic transition frequency, when pass through with assistance of couple light, quantum coherent interference will cause previously opaque medium to induce sharp transparent windows in the frequency absorption region, while exhibiting slow light effects. Microscopy is lens system like photolithography, its limit is dictated by Airy disk, with value of 200nm, SMLM has brought inspiration, it breaks through limit and achieve nm resolution.
International Workshop on Advanced Patterning Solutions (IWAPS)•Oct 26, 2023•0 citations