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IEEE Transactions on Microwave Theory and Techniques

Broadband quasi-optical SIS mixers with large area junctions

G. Pance, Michael J. Wengler

Published Apr 1, 1994• 5 citations
Publisher

Abstract

A broadband quasi-optical superconducting tunnel junction (SIS) mixer with integrated tuning elements was designed and tested. We are able to achieve very low noise performance using commercially available niobium integrated circuit (IC) technology. The low critical current density (980 A/cm/sup 2/) and large area (12 /spl mu/m/sup 2/) of the commercial SIS's is compensated by the ability to fabricate accurate integrated tuning structures in the mature niobium IC process available from Hypres, Inc. Noise measurements were made in the frequency range from 70 to 105 GHz. The best uncorrected double sideband receiver noise is 38 K at 77 GHz, with receiver noise temperatures less than 100 K from 75 to 102 GHz.>

DOI
10.1109/22.285090

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Applied Physics Letters•Mar 18, 1996•97 citations
A broadband quasi-optical superconducting tunnel junction (SIS) mixer with integrated tuning elements was designed and tested. We are able to achieve very low noise performance using commercially available niobium integrated circuit (IC) technology. The low critical current density (980 A/cm/sup 2/) and large area (12 /spl mu/m/sup 2/) of the commercial SIS's is compensated by the ability to fabricate accurate integrated tuning structures in the mature niobium IC process available from Hypres, Inc. Noise measurements were made in the frequency range from 70 to 105 GHz. The best uncorrected double sideband receiver noise is 38 K at 77 GHz, with receiver noise temperatures less than 100 K from 75 to 102 GHz.>
We present measurements and simulations of mixer performance around 660 GHz and around 800 GHz. We use Nb-Al/sub 2/O/sub 3/-Nb tunnel junctions with areas of 0.9 /spl mu/m/sup 2/ and 0.7 /spl mu/m/sup 2/, and RA-products of 14.5 /spl Omega/(/spl mu/m)/sup 2/ and 13 /spl Omega/(/spl mu/m)/sup 2/ for 660 GHz and 800 GHz. Both junctions have an integrated tuning structure made of niobium that consists of a series resonant stub and a quarter lambda transformer. The waveguide mixerblock has no additional adjustable tuning elements. It contains just a waveguide cavity and a substrate channel across it. A horn is carefully adjusted to the cavity and flanged to the block. The measured receiver noise temperatures from 630-690 GHz are below 190 K with a best value of 120 K at 655 GHz. From 780-820 GHz they are below 950 K with a best value of 780 K at 792 GHz. When the operating temperature is reduced from 4.2 K to 2.5 K, a reduction in noise temperature from 830 K to 660 K is observed at 810 GHz. The mixer performance is simulated using the quantum theory of mixing. The simulated performance shows a fairly good agreement with the measured one.
We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
The authors present two different designs of integrated tuning elements for superconducting tunnel junction mixers. The structures consist of a self-complementary log-periodic antenna, superconductor-insulator-superconductor (SIS) tunnel junction, and a broadband superconducting tuning circuit placed between the center of the antenna and the SIS junction. The designs allow good coupling to relatively large-area (7 mu m/sup 2/) junctions. The best design has a 3-dB bandwidth of 102 GHz at the central frequency of 98 GHz, and 75 GHz at the central frequency of 492 GHz. Microwave scale-model measurements show excellent agreement with simulation results. Devices are being fabricated in niobium technology.>
We report on low-noise heterodyne mixing with NbN/A1N/NbN tunnel junctions in the submillimeter-wave region for the first time. The receiver consists of the quasi-optical NbN SIS mixer with an integrated tuning circuit in which a radial short stub tuner is incorporated to resonate out the junction capacitance for RF matching and a balanced IF circuit for broadband IF matching. The prepared NbN SIS junction has a current density of 20 kA/cm 2 and is about 1 I1111 in diameter, supplying a small coC JRN product (o)CJRN = 3 at 300 GHz). The junctions showed good dc I-V characteristics, excellent submillimeter-wave responses and sensitive heterodyne mixing responses. From 254 to 350 GHz the average receiver noise temperature measured using by the standard Y-factor method was about 250 K (DSB) at 5 K. The lowest receiver noise temperature, 200 K (DSB), was obtained at around 303 GHz. Comparing NbN/A1N/NbN and Nb/A10x/Nb tunnel junction performance with the same tuning circuit showed that the frequency dependence of the receiver noise temperature agreed well in the two receivers. These results suggest that our well-controlled NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We have designed, fabricated, and tested terahertz superconductor-insulator-superconductor (SIS) mixers having a self-compensated NbN/AlN/NbN tunnel junction and an epitaxially grown NbN/MgO/NbN microstripline. The junction as a distributed element was 0.8-/spl mu/m wide and 2.4-/spl mu/m long, and its current density was 50 kA/cm/sup 2/. The microstripline consisted of a 200-nm-thick NbN ground plane, a 180-nm-thick MgO insulator, and a 350-nm-thick NbN wiring layer. An investigation of the mixer in our receiver configuration showed flat noise characteristics from 870 to 960 GHz. The lowest receiver noise temperature of about 550 K was obtained at 909 GHz, including a 9-/spl mu/m-thick Mylar beam splitter loss and other optical losses. These characteristics suggest that SIS mixers with self-compensated NbN/AlN/NbN junctions and NbN/MgO/NbN microstriplines are appropriate for used in wideband and low-noise operations at terahertz frequencies.
We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.