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Chinese Physics B

Phase escape of current-biased Josephson junctions

Cao Wen-Hui, Yu Hai-Feng, Ye Tian, Chen Geng-Hua, Zhao Shi-Ping

Published Jun 1, 2010• 0 citations
Publisher

Abstract

Switching current distributions of an Nb/Al–AlO x /Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov (LO) which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.

DOI
10.1088/1674-1056/19/6/067401

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IEEE Transactions on Applied Superconductivity•Aug 20, 2014•0 citations
Switching current distributions of an Nb/Al–AlO x /Nb Josephson junction are measured in a temperature range from 25 mK to 800 mK. We analyse the phase escape properties by using the theory of Larkin and Ovchinnikov (LO) which takes discrete energy levels into account. Our results show that the phase escape can be well described by the LO approach for temperatures near and below the crossover from thermal activation to macroscopic quantum tunneling. These results are helpful for further study of macroscopic quantum phenomena in Josephson junctions where discrete energy levels need to be considered.
Quantum phase diffusion in a small underdamped Nb/AlO(x)/Nb junction (∼0.4 μm(2)) is demonstrated in a wide temperature range of 25-140 mK where macroscopic quantum tunneling (MQT) is the dominant escape mechanism. We propose a two-step transition model to describe the switching process in which the escape rate out of the potential well and the transition rate from phase diffusion to the running state are considered. The transition rate extracted from the experimental switching current distribution follows the predicted Arrhenius law in the thermal regime but is greatly enhanced when MQT becomes dominant.
We have developed a scheme for high resolution measurements of the switching current distribution of a current-biased Josephson tunnel junction using a timing technique. In the measurement setup digital control and read-out electronics are galvanically isolated from the analog sample bias electronics by an optical fiber link. We have successfully used this technique to investigate thermal activation and macroscopic quantum tunneling of the phase in a high-quality 5×5 μm2 Nb–Al/AlOx–Nb Josephson tunnel junction with a critical current of Ic≈325 μA. At temperatures above the cross over temperature of T★≈280 mK the escape is dominated by thermal activation. Due to the high quality factor of the junction (Q≈95), the escape temperature is noticeably affected by the thermal prefactor. At temperatures below T★, the value of which agrees well with the theoretical predictions, the escape of the phase by quantum mechanical tunneling is observed. The presented technique can be employed to characterize current-biased Josephson tunnel junctions for applications in quantum information processing.
A two-step transition model describing phase diffusion and switching process in underdamped Josephson junctions is discussed. The model takes into account the phase particle's escape rate out of the potential well and transition rate from phase diffusion to the running state. Using as examples the experimental switching current distributions of two Nb/AlO x /Nb junctions of different sizes fabricated on the same chip, we extract the transition rate, which turns out to follow the predicted Arrhenius law in the thermal regime but is greatly enhanced when macroscopic quantum tunneling becomes the dominant escape mechanism. Our results show the validity of applying the model to obtain the transition rate out of the phase diffusion state into the running state from measured switching current distribution of underdamped Josephson junctions. The temperature and bias-current dependent data provide strong evidence for phase diffusion in both thermal and quantum regimes.
We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.
A macroscopic variable, the phase difference across a Josephson junction, is shown to obey quantum mechanics by observing the phenomena of energy-level quantization and quantum tunneling.The relevant parameters of the junction were determined .!.!! .ill!:!, in the thermal regime from the dependence of the escape rate on bias current and from resonant activation in the presence of microwaves.The first observation of quantized energy levels for this system is reported.The positions of these energy levels are in quantitative agreement with the quantum mechanical predictions based on the measured junction parameters.A model is presented that predicts correctly the observed resonance shapes.The measured value of the escape rate out of the zero-voltage state for an underdamped (Q -30) junction was found to be independent of temperature at low temperatures.This low temperature escape rate was in excellent agreement with the prediction for macroscopic quantum tunneling, with no adjustable parameters.Jolw rJt..
Parametric Characterization and Macroscopic Quantum Tunneling of Nb/AlOx/Nb\hbox{Nb}/\hbox{AlO}_{\rm x}/\hbox{Nb}Nb/AlOx​/Nb Josephson Junctions
Parameters ofNb/AlOx/Nb\hbox{Nb}/\hbox{AlO}_{\rm x}/\hbox{Nb}Nb/AlOx​/NbJosephson including its critical current and capacitance which determine the dynamic energy consumption and speed of the superconducting electronics have been measured. The critical current of a22×22 μm222 \times 22 \ \mu\hbox{m}^{2}22×22 μm2junction is1801±52 μA1801 \pm 52 \ \mu\hbox{A}1801±52 μAcalculated from the dependent curve between the lifetime of zero-voltage and switching current. The specific capacitance is0.051±0.008 pF/μm20.051 \pm 0.008 \ \hbox{pF}/\mu\hbox{m}^{2}0.051±0.008 pF/μm2obtained by observing Fiske self-resonant step when applied several Gauss magnetic field. Critical current distributions had been measured as a function of temperature from 900 mK to 40 mK. The distribution widths become independent of temperature below 200 mK, which indicates the transition between thermal activation and macroscopic quantum tunneling of junction phase.