Pulse Current Measurements and Rabi Oscillations in a dc SQUID Phase Qubit
Tauno Palomaki, S. K. Dutta, Rupert Lewis, Hanhee Paik, K.. Mitra, Benjamin K. Cooper, A. J. Przybysz, Alex J. Dragt, J. R. Anderson, Christopher J. Lobb, F. C. Wellstood
We have used 2 ns pulses of current to read out the states of a Nb/AlOx/Nb dc SQUID phase qubit at 25 mK. Plotting the number of escape events that occur versus the size of the current pulse reveals a series of steps corresponding to the occupancy of different energy levels. After calibrating the measurement pulses, we fit these steps to determine the population in each level. Rabi oscillations were viewed using this technique. The single-shot measurement fidelity was theoretically analysed and the optimal single pulse in our device was determined.
We have used 2 ns pulses of current to read out the states of a Nb/AlOx/Nb dc SQUID phase qubit at 25 mK. Plotting the number of escape events that occur versus the size of the current pulse reveals a series of steps corresponding to the occupancy of different energy levels. After calibrating the measurement pulses, we fit these steps to determine the population in each level. Rabi oscillations were viewed using this technique. The single-shot measurement fidelity was theoretically analysed and the optimal single pulse in our device was determined.
We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%.
This thesis examines the behavior of dc SQUID phase qubits in terms of their proposed use in a quantum computer. In a phase qubit, the two lowest energy states (n=0 and n=1) of a current-biased Josephson junction form the qubit states, with the gauge invariant phase difference across the junction being relatively well defined. In a dc SQUID phase qubit, the Josephson junction is isolated from the environment using an inductive isolation network and Josephson junction, which are connected across the phase qubit junction to form a dc SQUID. Five dc SQUID phase qubits were examined at temperatures down to 25 mK. Three of the devices had qubit junctions that were Nb/AlOx/Nb junctions with critical currents of roughly 30 microamps. The other two had Al/AlOx/Al junctions with critical currents of roughly 1.3 microamps. The device that had the best performance was an Al/AlOx/Al device with a relaxation time of 30 ns and a coherence time of 24 ns. The devices were characterized using microwave spectroscopy, Rabi oscillations, relaxation and Ramsey fringe measurements. I was also able to see coupling between two Nb/AlOx/Nb dc SQUID phase qubits and perform Rabi oscillations with them. The Nb/AlOx/Nb devices had a relaxation time and coherence time that were half that of the Al/AlOx/Al device. One of the goals of this work was to understand the nature of parasitic quantum systems (TLSs) that interact with the qubit. Coupling between a TLS and a qubit causes an avoided level crossing in the transition spectrum of the qubit. In the Al/AlOx/Al devices unintentional avoided level crossings were visible with sizes up to 240 MHz, although most visible splittings were of order ~20 MHz. The measured spectra were compared to a model of the avoided level crossing based on the TLSs coupling to the junction, through either the critical current or the voltage across the junction.
We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit, a spectroscopic coherence time ${T}_{2}^{\ensuremath{\ast}}$ varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant ${T}^{\ensuremath{'}}=25\phantom{\rule{0.3em}{0ex}}\text{ns}$ on average at 80 mK. The three Nb devices also showed ${T}_{2}^{\ensuremath{\ast}}$ in the range of 3--8 ns, but ${T}^{\ensuremath{'}}$ was 9--15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening.
A dc SQUID phase qubit consists of two Josephson junctions in a loop. One junction acts as a qubit with two lowest energy levels forming the |0> and |1> status. The second junction and the loop inductance act to isolate the qubit junction from noise. In this thesis, I report on the improvement of the relaxation time and the coherence time in a dc SQUID phase qubit that used an LC filter. I also report the measurement of anomalous switching curves. In order to improve the relaxation and coherence times, I used two isolation networks, an LC isolation network and an inductive isolation network, to decouple the device from the current bias lines. This produced a very large total effective resistance of the input leads that increases the relaxation time of the qubit. In addition, I connected a low-loss SiNx shunting capacitor across the qubit junction to reduce dielectric losses. I measured two dc SQUID phase qubits. Device DS6 had a 4 (μm)2 Al/AlOx/Al qubit junction with a critical current of 0.5 μA and a 1 pF shunting capacitor. It used an LC filter made from a 10 nH inductor and a 145 pF capacitor. The capacitors contained N-H rich SiNx which produced a loss tangent of about 7×10 -4 . Device DS8 had a 2 (μm)2 Al/AlOx/Al qubit junction with a critical current of 77 nA and an LC filter similar to the first one. The shunting capacitor contained Si-H rich SiNx. Using a pulse readout technique, I measured the characteristics of the qubits, including the transition spectrum, Rabi oscillations, relaxation, Ramsey fringes and state tomography. The best relaxation time T1 for device DS6 was 32 ns and 280 ns for device DS8. The best Rabi decay time T' for DS6 was 42 ns while for device DS8 it was 120 ns. From these and other data I obtained estimates for the best coherence time T2 in device DS6 of 61 ns and 76 ns in device DS8. In DS8, I observed anomalous switching curves; i.e. switching curves which were qualitatively different from conventional switching curves. In the conventional case, the switching curve for the superposition state is the weighted sum of the |0> and |1> curves, but it was not in device DS8. Instead, the switching curve shifted along the current axis as the exited state probability increased. I present a model for understanding the behavior and use this model to extract the probability to be in the excited state.
This thesis examines Josephson tunnel junctions as candidate qubits for quantum computation. A large area current-biased junction, known as a phase qubit, uses the two lowest energy levels in a tilted washboard potential as the qubit states |0> and |1>. I performed experiments with 10 x 10 um^2 Nb/AlOx/Nb qubit junctions, with critical currents of roughly 30 uA. The state of a device was initialized by cooling below 50 mK in a dilution refrigerator. In order for quantum mechanical superpositions to be long-lived, it is necessary to isolate the junction from noisy bias leads that originate at room temperature. I studied two types of isolation: an LC filter, and a broadband scheme that used an auxiliary junction, resulting in a dc SQUID. One of the main goals of this work was to determine how well a simple Hamiltonian, derived assuming just a few lumped elements, describes the observed behavior of a macroscopic Josephson device, including coherent dynamics such as Rabi oscillations. I did this by comparing results to the expected behavior of ideal two-level systems and with more detailed master equation and density matrix simulations. I performed state manipulation by applying dc bias currents and resonant microwave currents, and through temperature control. The tunneling escape rate of the junction from the states |0> and |1> (zero voltage) to the running state (finite voltage) depends on the occupation probability of the energy levels and served as state readout. Experiments to measure the relaxation time T1 between |1> and |0> were performed by examining the dependence of the escape rate with temperature, yielding a maximum T1 = 15 ns. Measuring the decay to the ground state after applying a microwave pulse revealed at least two time constants, one of about 10 ns and another as long as 50 ns. The spectroscopic coherence time T2* was estimated to be roughly 5 ns by measuring resonance widths and the decay envelope of coherent Rabi oscillations was found to have a time constant T' = 10 ns over a wide range of conditions.
Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-photon Rabi frequency, and two-photon Rabi frequency are compared to measurements made on a dc SQUID phase qubit with Nb/AlOx/Nb tunnel junctions. Good agreement is found between theory and experiment.