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arXiv:cond-mat/0608399

Fast High-Fidelity Measurements of the Ground and Excited States of a dc-SQUID Phase Qubit

Tauno Palomaki, S. K. Dutta, Rupert Lewis, Hanhee Paik, Kaushik Mitra, Benjamin K. Cooper, A. J. Przybysz, Alex J. Dragt, J. R. Anderson, Christopher J. Lobb, F. C. Wellstood

Published Aug 17, 2006• 2 citations
arXivHTMLPDF

Abstract

We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%.

DOI
10.48550/arxiv.cond-mat/0608399

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We report measurements of Rabi oscillations and spectroscopic coherence times in an $\text{Al}/{\text{AlO}}_{x}/\text{Al}$ and three $\text{Nb}/{\text{AlO}}_{x}/\text{Nb}$ dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit, a spectroscopic coherence time ${T}_{2}^{\ensuremath{\ast}}$ varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant ${T}^{\ensuremath{'}}=25\phantom{\rule{0.3em}{0ex}}\text{ns}$ on average at 80 mK. The three Nb devices also showed ${T}_{2}^{\ensuremath{\ast}}$ in the range of 3--8 ns, but ${T}^{\ensuremath{'}}$ was 9--15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening.

arXiv:0804.4430•Physical Review B•Jun 13, 2008•18 citations
We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%.
We have used 2 ns pulses of current to read out the states of a Nb/AlOx/Nb dc SQUID phase qubit at 25 mK. Plotting the number of escape events that occur versus the size of the current pulse reveals a series of steps corresponding to the occupancy of different energy levels. After calibrating the measurement pulses, we fit these steps to determine the population in each level. Rabi oscillations were viewed using this technique. The single-shot measurement fidelity was theoretically analysed and the optimal single pulse in our device was determined.
This thesis examines the behavior of dc SQUID phase qubits in terms of their proposed use in a quantum computer. In a phase qubit, the two lowest energy states (n=0 and n=1) of a current-biased Josephson junction form the qubit states, with the gauge invariant phase difference across the junction being relatively well defined. In a dc SQUID phase qubit, the Josephson junction is isolated from the environment using an inductive isolation network and Josephson junction, which are connected across the phase qubit junction to form a dc SQUID. Five dc SQUID phase qubits were examined at temperatures down to 25 mK. Three of the devices had qubit junctions that were Nb/AlOx/Nb junctions with critical currents of roughly 30 microamps. The other two had Al/AlOx/Al junctions with critical currents of roughly 1.3 microamps. The device that had the best performance was an Al/AlOx/Al device with a relaxation time of 30 ns and a coherence time of 24 ns. The devices were characterized using microwave spectroscopy, Rabi oscillations, relaxation and Ramsey fringe measurements. I was also able to see coupling between two Nb/AlOx/Nb dc SQUID phase qubits and perform Rabi oscillations with them. The Nb/AlOx/Nb devices had a relaxation time and coherence time that were half that of the Al/AlOx/Al device. One of the goals of this work was to understand the nature of parasitic quantum systems (TLSs) that interact with the qubit. Coupling between a TLS and a qubit causes an avoided level crossing in the transition spectrum of the qubit. In the Al/AlOx/Al devices unintentional avoided level crossings were visible with sizes up to 240 MHz, although most visible splittings were of order ~20 MHz. The measured spectra were compared to a model of the avoided level crossing based on the TLSs coupling to the junction, through either the critical current or the voltage across the junction.
Single-shot readout experiments were performed on the two lowest-energy states of a superconducting qubit with three Josephson junctions embedded in a superconducting loop. We measured the qubit state via switching current Isw of a current-biased dc-SQUID, a quantum detector surrounding the qubit loop. The qubit signals were measured in a small Isw regime of the SQUID, typically less than 100 nA, where the Isw distribution is particularly narrow. The obtained single-shot data indicate that the qubit state is readout, through the flux generated by the qubit persistent-current, as energy eigenstates rather than current eigenstates.
We have observed anomalous switching curves (s-curves) in a dc SQUID phase qubit. The SQUID has twoAl/AlOx/Al{\rm Al/AlO}_{\rm x}/{\rm Al}Al/AlOx​/AlJosephson junctions in a 1.5 nH loop. One junction as a phase qubit and the other acts as a detector junction. The qubit junction area is 2μm2\mu{\rm m}^{2}μm2, the critical current is 0.08μA\mu{\rm A}μAand the junction has an added low-lossSiNx{\rm SiN}_{\rm x}SiNx​shunting capacitor. The 1.37μA\mu{\rm A}μAdetector junction is isolated from the bias leads by an on-chip inductor-capacitor (LC) network with a 130 MHz cut-off. We measure the state of the system at 20 mK by sending a short current pulse to the device and monitoring whether it switches to the voltage state. The s-curves for the ground state (0) and excited state (1) look much as expected. However, unlike previous results on phase qubits, when the device is pumped to a superposition state, the resulting s-curve is not a weighted sum of the s-curves for the 0 and 1 state. Instead, the s-curve appears to shift to lower pulse current with increasing amplitude to be in the 1 state. We examine this behavior and discuss implications for measurement of quantum superposition states in this system.
A dc SQUID phase qubit consists of two Josephson junctions in a loop. One junction acts as a qubit with two lowest energy levels forming the |0> and |1> status. The second junction and the loop inductance act to isolate the qubit junction from noise. In this thesis, I report on the improvement of the relaxation time and the coherence time in a dc SQUID phase qubit that used an LC filter. I also report the measurement of anomalous switching curves. In order to improve the relaxation and coherence times, I used two isolation networks, an LC isolation network and an inductive isolation network, to decouple the device from the current bias lines. This produced a very large total effective resistance of the input leads that increases the relaxation time of the qubit. In addition, I connected a low-loss SiNx shunting capacitor across the qubit junction to reduce dielectric losses. I measured two dc SQUID phase qubits. Device DS6 had a 4 (μm)2 Al/AlOx/Al qubit junction with a critical current of 0.5 μA and a 1 pF shunting capacitor. It used an LC filter made from a 10 nH inductor and a 145 pF capacitor. The capacitors contained N-H rich SiNx which produced a loss tangent of about 7×10 -4 . Device DS8 had a 2 (μm)2 Al/AlOx/Al qubit junction with a critical current of 77 nA and an LC filter similar to the first one. The shunting capacitor contained Si-H rich SiNx. Using a pulse readout technique, I measured the characteristics of the qubits, including the transition spectrum, Rabi oscillations, relaxation, Ramsey fringes and state tomography. The best relaxation time T1 for device DS6 was 32 ns and 280 ns for device DS8. The best Rabi decay time T' for DS6 was 42 ns while for device DS8 it was 120 ns. From these and other data I obtained estimates for the best coherence time T2 in device DS6 of 61 ns and 76 ns in device DS8. In DS8, I observed anomalous switching curves; i.e. switching curves which were qualitatively different from conventional switching curves. In the conventional case, the switching curve for the superposition state is the weighted sum of the |0> and |1> curves, but it was not in device DS8. Instead, the switching curve shifted along the current axis as the exited state probability increased. I present a model for understanding the behavior and use this model to extract the probability to be in the excited state.
We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al\text{Al}/{\text{AlO}}_{x}/\text{Al}Al/AlOx​/Al and three Nb/AlOx/Nb\text{Nb}/{\text{AlO}}_{x}/\text{Nb}Nb/AlOx​/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit, a spectroscopic coherence time ${T}_{2}^{\ensuremath{\ast}}$ varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant ${T}^{\ensuremath{'}}=25\phantom{\rule{0.3em}{0ex}}\text{ns}$ on average at 80 mK. The three Nb devices also showed ${T}_{2}^{\ensuremath{\ast}}$ in the range of 3--8 ns, but ${T}^{\ensuremath{'}}$ was 9--15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening.