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Journal of Physics Conference Series

Superconducting nanowire single-photon detectors: Quantum efficiency vs. film thickness

M. Hofherr, Dagmar Rall, K. Ilin, Alexej D. Semenov, Николай Алексеевич Гиппиус, Heinz‐Wilhelm Hübers, M. Siegel

Published Jun 1, 2010• 9 citations
Publisher

Abstract

The quantum efficiency of superconducting nanowire single-photon detectors has been systematically studied in a broad spectral range from near ultra-violet to near infrared radiation. Detectors were made from NbN films on sapphire substrates and had thicknesses between 4 and 12 nm. The gradual reduction of the quantum efficiency with increasing wavelength is caused by a crossover from the "hot-spot" to the "vortex" detection scenario. For thicker films the wavelength demarcating the two regimes shifts to shorter wavelengths.

DOI
10.1088/1742-6596/234/1/012017

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The quantum efficiency of superconducting nanowire single-photon detectors has been systematically studied in a broad spectral range from near ultra-violet to near infrared radiation. Detectors were made from NbN films on sapphire substrates and had thicknesses between 4 and 12 nm. The gradual reduction of the quantum efficiency with increasing wavelength is caused by a crossover from the "hot-spot" to the "vortex" detection scenario. For thicker films the wavelength demarcating the two regimes shifts to shorter wavelengths.
We evaluate experimentally the intrinsic detection efficiency (IDE) of superconducting NbN nanowire single-photon detectors in the range of wire thicknesses from 4 to 12 nm. The study is performed in the broad spectral interval between near-ultraviolet (wavelength 400 nm) and near-infrared (wavelength 2000 nm) light with plane waves at normal incidence. For visible light the IDE of the thinnest detectors reaches 70%. We use numerically computed absorptance of the nanowire-structures for the analysis of the experimental data. Variations in the detection efficiency with both the wire thickness and the wavelength evidence the red boundary of the hot-spot photon-detection mechanism. We explain the detection at larger wavelengths invoking thermal excitation of magnetic Pearl vortices over the potential barrier at the edges of the wire.
We investigate the detection efficiency of a spiral layout of a superconducting nanowire single-photon detector. The design is less susceptible to the critical current reduction in sharp turns of the nanowire than the conventional meander design. Detector samples with different nanowire widths from 100 to 300 nm are patterned from a 4-nm-thick NbN film deposited on sapphire substrates. The critical current ICat 4.2 K for spiral, meander, and single-bridge structures is measured and compared. On the 100-nm-wide samples, the detection efficiency is measured in the wavelength range 400-1700 nm and the spectral bandwidth of the intrinsic detection efficiency is determined. In the optical range, the spiral detector reaches a detection efficiency of 27.6%, which is ~ 1.5 times the value of the meander. In the infrared range the detection efficiency of the spiral superconducting nanowire single-photon detector is more than doubled.
We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ=1300 nm and T=4.2 K.
We report on superconducting single-photon detectors (SSPDs) based on NbN nanowires and their application to single-photon measurements at telecom wavelengths. The detectors are realized by patterning ultra thin (3 - 5 nm-thick) NbN films into meanders of 100 nm-wide wires. The films are deposited by DC magnetron sputtering at relatively low temperatures (≈500 °C) on MgO and GaAs substrates (as compared to the approach of high-temperature deposition on sapphire). In 5 nm-thick films, TCsas high as 10 K and 11 K have been obtained on GaAs and MgO, respectively (Fig. 1). SSPDs have been fabricated by a two-mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO. The detectors are 5 × 5 μm2in size, and composed of a 100 μm long, 100 nm wide nanowire folded in a meander pattern with filling factor of 40%. Typical room temperature resistivity ρ is of 190 μΩ·cm, and I-V curves at 4.2 K show a critical current density JCof about 6 MA·cm-2, which are state of the art values. Quantum efficiency (QE) was measured illuminating the detectors mounted in a liquid He bath through an optical fiber. Quantum efficiencies >10% are measured at 4.2 K, comparable to best results on sapphire substrates. In particular, SSPDs show a large increase in sensitivity, temporal resolution and maximum counting frequencies as compared to InGaAs avalanche photodiodes.
Abstract Superconducting Nanowire Single-Photon Detectors (SNSPDs) are key building blocks for photonic quantum technologies due to their ability to detect single photons with ultra-high efficiency, low dark counts and fast temporal resolution. Superconducting materials exhibiting high uniformity, large absorption cross-section and atomic-scale thickness are desirable to extend single-photon detection from the near-infrared up to the terahertz regime, where existing material choices are especially constrained. Substrate independence would further open the way to integrating detectors onto functional materials and heterostructures, enhancing performance and enabling proximal readout of a wide range of individual excitations. Here, we pattern the prototypical two-dimensional superconductor niobium diselenide (NbSe 2 ) into few-layer nanowires less than 100 nm wide and demonstrate single-photon detection at 780 nm and 1550 nm. At the same time, the dark-count rate remains below 1 Hz up to the switching current and we achieve a timing jitter below 50 ps. We estimate via a diffusive hot-spot model that materials and geometric parameters would allow a theoretical cut-off wavelength in the millimetre range, assuming state-of-the-art device parameters. Our results open up routes toward quantum-limited detectors integrated into quantum-photonic circuits and quantum devices, with the potential for novel detection capabilities and unprecedented energy sensitivity.
Superconducting single photon detectors consist of a narrow and thin wire of superconductor and can detect single photons with high efficiency and high speed. Simultaneous optimization of the detection efficiency and detector response time is difficult because the response time is set by the dimensions of the wire (cross section and length) while the detection efficiency is determined by both the internal detection mechanism and the dimensions of the wire. Wider and shorter wires are easier to fabricate, are more robust and lead to shorter detector reset time, but are generally less efficient. Experiments employing detector tomography provide important insights into the photon detection mechanism and indicate a detection mechanism where the edges of the wire are more efficient. This leads to a position dependent local detection efficiency that can be explained in the context of a photon-assisted-vortex-entry model and predicts an optimum wire width ~70 nm. A 50 nm wide silicon nanowire deposited on top of a 150 nm wide NbN nanowire directs light at 1550 nm wavelength to the edges and improves both the total absorption efficiency and the internal detection efficiency of the wire. The total absorption efficiency can be enhanced by 30% while the internal detection efficiency is increased by 70%. Assuming that the wire covers a similar area the detector response time is reduced 4-fold compared to the standard design using a 70 nm wide wire.