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Springer eBooks

Room Temperature Bistability, Logic Gate Operation, Incoherent Switching and High Signal Gain with InSb Devices

Stanley Desmond Smith, Frank A. P. Tooley

Published Jan 1, 1984• 1 citation
Publisher
DOI
10.1007/978-1-4684-4718-7_31

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In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.

Optical Engineering•Feb 1, 1985•52 citations
Abstract InSb etalons operated at 77 K and illuminated by CO lasers (5.5 pm) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2 lasers (10.6 pm).
In this paper we present the basic principles of optical bistability and summarize the current advances in semiconductor optical switching, with emphasis on recent results in GaAs, CuCI, InAs, InSb, CdS, ZnS, and ZnSe etalons. These devices have great potential for applications involving optical signal processing and computing. As an example, we discuss the use of arrays of bistable devices for parallel optical processing and for addressable spatial light modulators. The use of nonlinear etalons as optical gates is also illustrated. To date, GaAs devices have shown the most favorable characteristics for practical applications. They operate at room temperature with a few milliwatts of power using a laser diode as the only light source. Quasi-cw operation and optical fiber signal regeneration have also been demonstrated. A GaAs NOR gate operates in 1 ps with <3 pJ incident energy; this, of course, implies a 1 ps switch-on time for a bistable etalon.