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IEEE Transactions on Applied Superconductivity

High-frequency performance of RSFQ circuits realized in SINIS technology

M. Khabipov, D Balashov, F.-I. Buchholz, J. Niemeyer

Published Mar 1, 2001• 7 citations
Publisher

Abstract

The paper presents the determination of the high-frequency performance of Rapid Single Flux Quantum (RSFQ) circuits fabricated in superconductor-insulator-normal metal-insulator-superconductor (SINIS) technology. Circuits of different designs have been realized and were experimentally investigated, including specially designed T flip-flop (TFF) structures and circuits consisting of a switch terminated in Josephson transmission lines. For TFF circuits, the operational functionality was investigated in the frequency range from dc up to nearly 200 GHz. Two frequency domains were found. In the first domain, ranging up to frequencies of 80 GHz (f/sub C//spl cong/Y/sub C///spl Phi//sub 0/), correct digital operation of the device was ascertained. Beyond this range a second domain was found, ranging to nearly 200 GHz, for which quasi-analog frequency dividing is assumed. The bias current margins are /spl plusmn/30% at 40 GHz and /spl plusmn/15% between 130 GHz and 200 GHz. For circuits consisting of a switch, the operational functionality was proved in the frequency range from dc up to 50 GHz, with bias current margins of more than /spl plusmn/20%. The critical current density of the circuits is j/sub C//spl cong/750 A/cm/sup 2/. The smallest junction area is about A=12 /spl mu/m/sup 2/, and the characteristic voltage is V/sub C/=170 /spl mu/V.

DOI
10.1109/77.919533

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The paper presents the determination of the high-frequency performance of Rapid Single Flux Quantum (RSFQ) circuits fabricated in superconductor-insulator-normal metal-insulator-superconductor (SINIS) technology. Circuits of different designs have been realized and were experimentally investigated, including specially designed T flip-flop (TFF) structures and circuits consisting of a switch terminated in Josephson transmission lines. For TFF circuits, the operational functionality was investigated in the frequency range from dc up to nearly 200 GHz. Two frequency domains were found. In the first domain, ranging up to frequencies of 80 GHz (f/sub C//spl cong/Y/sub C///spl Phi//sub 0/), correct digital operation of the device was ascertained. Beyond this range a second domain was found, ranging to nearly 200 GHz, for which quasi-analog frequency dividing is assumed. The bias current margins are /spl plusmn/30% at 40 GHz and /spl plusmn/15% between 130 GHz and 200 GHz. For circuits consisting of a switch, the operational functionality was proved in the frequency range from dc up to 50 GHz, with bias current margins of more than /spl plusmn/20%. The critical current density of the circuits is j/sub C//spl cong/750 A/cm/sup 2/. The smallest junction area is about A=12 /spl mu/m/sup 2/, and the characteristic voltage is V/sub C/=170 /spl mu/V.
We have developed integrated circuits in rapid single flux quantum (RSFQ) impulse logic based on intrinsically shunted tunnel junctions as the active circuit elements. The circuits have been fabricated using superconductor-insulator-normalconductor-insulator-superconductor (SINIS) multilayer technology. The paper presents experimental results of the operation of various RSFQ circuits realized in different designs and layouts. The circuits comprise dc/SFQ and SFQ/dc converters, Josephson transmission lines (JTLs), T-flipflops, and analog key components. Functionality has been proved; the circuits have been found to operate correctly in switching. The circuits investigated have a critical current density of j/sub C/=400 A/cm/sup 2/ and a characteristic voltage of V/sub C/=165 /spl mu/V, the area of the smallest junction is A=24 /spl mu/m/sup 2/. The junctions exhibit nearly hysteresis-free current-voltage characteristics (hysteresis: less than 7%), the intra-wafer parameter spread for j/sub C/ is below /spl plusmn/8%. The margins of the bias current I/sub b/ of the circuits have been experimentally determined and found to be larger than /spl plusmn/24%. At preset, constant values of I/sub b/, the range of a separate bias current I/sub bsw/ fed to a switching stage integrated between two segments of JTL's is fully covered by the operation margins which are larger than /spl plusmn/56%.
The operational functionality of rapid-single-flux-quantum (RSFQ) T-flipflop circuits has been experimentally investigated in the frequency range from dc up to nearly three times the characteristic frequency . The operational range found is divided into two domains different in nature. In the first domain, ranging up to frequencies of 120 GHz , correct digital operation of the device has been found. Beyond this range a second domain has been found, ranging from about 200 GHz to nearly 350 GHz, in which quasi-analogous operation of frequency dividing is suggested. Typical bias current margins are in the first domain and in the second. The circuits have been fabricated using - Al/Nb trilayer technology with externally shunted Josephson tunnel junctions of critical current densities of and smallest areas of about . The characteristic voltage is and the McCumber parameter .
Rapid Single Flux Quantum (RSFQ) T-flip flops (TFFs) operating up to 770 GHz have been demonstrated at 4.2 K. The devices, consisting of either resistively shunted or unshunted Josephson junctions, are fabricated using a planarized Nb/AlO/sub x//Nb trilayer process. Electron beam lithography is used to pattern all levels with a minimum junction area less than 0.1 /spl mu/m/sup 2/. Critical current densities of 0.5 mA//spl mu/m/sup 2/ and 2.5 mA//spl mu/m/sup 2/ are used for the shunted (tested at 1.8 K) and unshunted devices (tested at 4.2 K) respectively. The input and output frequencies of the TFFs are obtained from the input and output voltages by the Josephson relation. The output voltage is exactly half of the input voltage when the divide-by-two operation is correct.
We fabricated and tested high-temperature superconducting (HTS) rapid-single-flux-quantum (RSFQ) circuits using interface-engineered Josephson junction (IEJ). The characteristics of high-speed operation were examined by voltage-divider operation based on the toggle-flip-flop circuit. An operation at 155 GHz was obtained at 15 K and the proper functioning of the voltage divider was observed up to 27 K. Temperature dependence of the maximum operation speed was analyzed by circuit simulation with thermal-noise sources. To achieve higher speed operation using a Josephson junction with a higher I/sub c/R/sub n/ product, we also fabricated an RSFQ balanced comparator using IEJ; proper switching characteristics of the circuit was confirmed up to 190 GHz at 30 K. The bias condition dependencies were studied based on the circuit simulations in the relationship of the I/sub c/R/sub n/ product. The results of circuit simulation indicate that a Josephson junction with an I/sub c/R/sub n/ product of more than 0.7 mV is required for high-speed operation (100 GHz) in high-temperature range (30-40 K). We believe that the IEJ is a promising junction candidate for realizing high-speed operation in a high-temperature range.
A simple test circuit of the rapid single-flux-quantum (RSFQ) logic family has been implemented in a planarized all-refractory technology using only two superconducting layers and small Nb/AlOx/Nb Josephson junctions (nominally 1.5×1.5 μm2) with critical current density jc≊6 kA/cm2. A special layout design of the integrated circuit (including a SFQ pulse generator, Josephson transmission line, and T flip–flop) was used to reduce 3D inductances resulting from absence of the ground plane. For samples with various junction parameters, the maximum frequency of the SFQ pulse train, which could be divided by 2 by the flip–flop, ranged from 200 to 370 GHz.
A new generation of the Josephson digital circuits-rapid single flux quantum (RSFQ) devices-based on overdamped externally shunted high quality Nb-AlO x -Nb tunnel junctions have been designed, fabricated and experimentally investigated. All-refractory material 11-layer 5 mu m integrated technology has been successfully employed for the preparation of the RSFQ microcircuits. The T flip-flop has been demonstrated to operate properly up to clock frequencies of 100 GHz at 25% margins. The proper operation of the buffer stage for a one-directional SFQ pulse transmission at clock frequencies up to 125 GHz has been achieved. The possibilities to convert the information from the usual DC form to SFQ and vice versa have been demonstrated. An output signal in an SFQ/DC converter as high as 220 mu V has been measured. A new counter type A/D converter which includes a comparator and reversible binary counter with DC outputs has been fabricated and tested. The proposed ADC seems to be very promising for high-accuracy measurement of medium-bandwidth signals. The possibilities of creating a number of SFQ devices with outstanding parameters are discussed.