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Optics Letters

Low Raman-noise correlated photon-pair generation in a dispersion-engineered chalcogenide As_2S_3 planar waveguide

Matthew J. Collins, Alex S. Clark, Jiakun He, Duk‐Yong Choi, Robert J. Williams, Alexander C. Judge, Steve Madden, Michael J. Withford, Michael J. Steel, Barry Luther‐Davies, Chunle Xiong, Benjamin J. Eggleton

Published Aug 6, 2012• 54 citations
Publisher

Abstract

We demonstrate low Raman-noise correlated photon-pair generation in a dispersion-engineered 10 mm As2S3 chalcogenide waveguide at room temperature. We show a coincidence-to-accidental ratio (CAR) of 16.8, a 250 times increase compared with previously published results in a chalcogenide waveguide, with a corresponding brightness of 3×10(5) pairs·s(-1)·nm(-1) generated at the chip. Dispersion engineering of our waveguide enables photon passbands to be placed in the low spontaneous Raman scattering (SpRS) window at 7.4 THz detuning from the pump. This Letter shows the potential for As2S3 chalcogenide to be used for nonlinear quantum photonic devices.

DOI
10.1364/ol.37.003393

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We demonstrate low Raman-noise correlated photon-pair generation in a dispersion-engineered 10 mm As2S3 chalcogenide waveguide at room temperature. We show a coincidence-to-accidental ratio (CAR) of 16.8, a 250 times increase compared with previously published results in a chalcogenide waveguide, with a corresponding brightness of 3×10(5) pairs·s(-1)·nm(-1) generated at the chip. Dispersion engineering of our waveguide enables photon passbands to be placed in the low spontaneous Raman scattering (SpRS) window at 7.4 THz detuning from the pump. This Letter shows the potential for As2S3 chalcogenide to be used for nonlinear quantum photonic devices.
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We theoretically investigate the generation of quantum-correlated photon pairs through spontaneous four-wave mixing in chalcogenide As(2)S(3) waveguides. For reasonable pump power levels, we show that such photonic-chip-based photon-pair sources can exhibit high brightness (approximately 1 x 10(9) pairs/s) and high correlation (approximately 100) if the waveguide length is chosen properly or the waveguide dispersion is engineered. Such a high correlation is possible in the presence of Raman scattering because the Raman profile exhibits a low gain window at a Stokes shift of 7.4 THz, though it is constrained due to multi-pair generation. As the proposed scheme is based on photonic chip technologies, it has the potential to become an integrated platform for the implementation of on-chip quantum technologies.
In this paper we investigate uncorrelated noise from spontaneous Raman scattering (SpRS) and its effect on photon-pair generation in chalcogenide (As2S3). We measure a coincidence-to-accidental ratio (CAR) of 4.2 in a 7 cm As2S3 single-mode fiber, with enhancements from our previous result attributed to pulsed pumping and cooling. Using an analytical model we characterize the magnitude of the SpRS at different temperatures. Our analysis shows that even after cooling to liquid nitrogen temperature (77 K), SpRS is still significant. For large detunings from the pump, the dependence on temperature for the Stokes SpRS intensity becomes negligible, so cooling is not a complete solution to improve the quality of the photon source.