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Advanced Photonics & Renewable Energy

Correlated Photon Pair Generation in Chalcogenide As2S3 Photonic Integrated Circuits

Chunle Xiong, A. C. Judge, Graham D. Marshall, Michael J. Steel, Benjamin J. Eggleton

Published Jan 1, 2010• 0 citations
Publisher

Abstract

We theoretically investigate correlated photon pair generation using spontaneous four-wave mixing in As2S3 waveguides. We show that chalcogenide photonic chip based pair source will exhibit high brightness and correlation if the dispersion is properly engineered.
DOI
10.1364/np.2010.nthb4

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We theoretically investigate the generation of quantum-correlated photon pairs through spontaneous four-wave mixing in chalcogenide As(2)S(3) waveguides. For reasonable pump power levels, we show that such photonic-chip-based photon-pair sources can exhibit high brightness (approximately 1 x 10(9) pairs/s) and high correlation (approximately 100) if the waveguide length is chosen properly or the waveguide dispersion is engineered. Such a high correlation is possible in the presence of Raman scattering because the Raman profile exhibits a low gain window at a Stokes shift of 7.4 THz, though it is constrained due to multi-pair generation. As the proposed scheme is based on photonic chip technologies, it has the potential to become an integrated platform for the implementation of on-chip quantum technologies.
We demonstrate low Raman-noise correlated photon-pair generation in a dispersion-engineered 10 mm As2S3 chalcogenide waveguide at room temperature. We show a coincidence-to-accidental ratio (CAR) of 16.8, a 250 times increase compared with previously published results in a chalcogenide waveguide, with a corresponding brightness of 3×10(5) pairs·s(-1)·nm(-1) generated at the chip. Dispersion engineering of our waveguide enables photon passbands to be placed in the low spontaneous Raman scattering (SpRS) window at 7.4 THz detuning from the pump. This Letter shows the potential for As2S3 chalcogenide to be used for nonlinear quantum photonic devices.