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Optics Express

Raman scattering effects on correlated photon-pair generation in chalcogenide

Alex S. Clark, Matthew J. Collins, Alexander C. Judge, Eric C. Magi, Chunle Xiong, Benjamin J. Eggleton

Published Jul 10, 2012• 34 citations
Publisher

Abstract

In this paper we investigate uncorrelated noise from spontaneous Raman scattering (SpRS) and its effect on photon-pair generation in chalcogenide (As2S3). We measure a coincidence-to-accidental ratio (CAR) of 4.2 in a 7 cm As2S3 single-mode fiber, with enhancements from our previous result attributed to pulsed pumping and cooling. Using an analytical model we characterize the magnitude of the SpRS at different temperatures. Our analysis shows that even after cooling to liquid nitrogen temperature (77 K), SpRS is still significant. For large detunings from the pump, the dependence on temperature for the Stokes SpRS intensity becomes negligible, so cooling is not a complete solution to improve the quality of the photon source.

DOI
10.1364/oe.20.016807

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In this paper we investigate uncorrelated noise from spontaneous Raman scattering (SpRS) and its effect on photon-pair generation in chalcogenide (As2S3). We measure a coincidence-to-accidental ratio (CAR) of 4.2 in a 7 cm As2S3 single-mode fiber, with enhancements from our previous result attributed to pulsed pumping and cooling. Using an analytical model we characterize the magnitude of the SpRS at different temperatures. Our analysis shows that even after cooling to liquid nitrogen temperature (77 K), SpRS is still significant. For large detunings from the pump, the dependence on temperature for the Stokes SpRS intensity becomes negligible, so cooling is not a complete solution to improve the quality of the photon source.
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We investigated correlated photon-pair generation via spontaneous four-wave mixing in an integrated chalcogenide Ge11.5As24Se64.5 photonic nanowire. The coincidence to accidental ratio, a key measurement for the quality of correlated photon-pair sources, was measured to be only 0.4 when the photon pairs were generated at 1.9 THz detuning from the pump frequency due to high spontaneous Raman noise in this regime. However, the existence of a characteristic low-Raman window at around 5.1 THz in this material's Raman spectrum and dispersion engineering of the nanowire allowed us to generate photon pairs with a coincidence to accidental ratio of 4.5, more than 10 times higher than the 1.9 THz case. Through comparing the results with those achieved in chalcogenide As2S3 waveguides which also exhibit a low Raman-window but at a larger detuning of 7.4 THz, we find that the position of the characteristic low-Raman window plays an important role on reducing spontaneous Raman noise because the phonon population is higher at smaller detuning. Therefore the ultimate solution for Raman noise reduction in Ge11.5As24Se64.5 is to generate photon pairs outside the Raman gain band at more than 10 THz detuning.