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Journal of Low Temperature Physics

Characterization of Superconducting Single Photon Detectors Fabricated on MgO Substrates

Roberto Leoni, Alessandro Gaggero, F. Mattioli, Maria Gabriella Castellano, P. Carelli, Francesco Marsili, David Bitauld, M. Benkahoul, Francis Lévy, Andrea Fiore

Published Jan 10, 2008• 4 citations
Publisher
DOI
10.1007/s10909-007-9692-3

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We report on the fabrication and characterization of high performance nanowire superconducting single photon detectors (SSPD) on MgO substrates. The deposition of the superconducting material (NbN) has been performed by magnetron sputtering at 400°C. This deposition temperature is low enough to be compatible with the fabrication on traditional optical materials like GaAs. First, SSPD meanders covering a surface of 5 × 5 µm2 were characterized. We measured quantum efficiencies up to 20% at 1300 nm. Then, we used a straight 250 µm-long NbN nanowire to perform a spatially resolved measurement of the efficiency. Both efficiency dips and peaks were observed. The dips were correlated to lithographic defects, as confirmed by scanning electron microscopy. Conversely, no evidence of a lithographic origin of efficiency peaks was found.
We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on bN thin films grown at a temperature compatible with monolithic integration. NbN films ranging from 150 nm to 3 nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400 degrees C SSPDs were fabricated on high quality NbN films of different thickness (7 to 3 nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300 nm.
High sensitivity ultrafast nanowire superconducting single photon detectors (SSPD) in the near infrared wavelength range have been fabricated with ultrathin (3.5nm) NbN films grown on R-plane sapphire substrates by dc reactive magnetron sputtering in Ar+N2mixture. These results show for the first time that high performance NbN SSPDs can be realized on different substrates and at lower deposition temperature than previously reported, and opens the way to integration with advanced solid state optical structures. SSPDs have been fabricated by a two mask process using electron beam lithography and reactive ion etching on 3.5nm thick NbN films deposited under optimal conditions on MgO.