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IEEE Journal of Selected Topics in Quantum Electronics

Frequency-domain model of multiwave mixing in bulk semiconductor optical amplifiers

M.A. Summerfield, R.S. Tucker

Published Jan 1, 1999• 43 citations
Publisher

Abstract

We present a new steady-state frequency-domain model of highly nondegenerate four-wave mixing in bulk semiconductor optical amplifiers (SOA's). The model can handle a large number of interacting optical fields and situations in which the nonlinear interactions are complex. It accounts for the longitudinal dependence of the population inversion in the SOA and the spectral dependence of the gain. Carrier population pulsations, spectral-hole burning, and carrier heating, which dominate the nonlinear response over bandwidths into the terahertz range, are included. The model also includes output amplified spontaneous emission noise and allows important system parameters such as signal-to-noise ratio and noise figure to be estimated. A number of applications of the model are presented in which good agreement between theoretical and experimental results is demonstrated.

DOI
10.1109/2944.788458

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IEEE Journal of Quantum Electronics•Jan 1, 1992•132 citations
We present a new steady-state frequency-domain model of highly nondegenerate four-wave mixing in bulk semiconductor optical amplifiers (SOA's). The model can handle a large number of interacting optical fields and situations in which the nonlinear interactions are complex. It accounts for the longitudinal dependence of the population inversion in the SOA and the spectral dependence of the gain. Carrier population pulsations, spectral-hole burning, and carrier heating, which dominate the nonlinear response over bandwidths into the terahertz range, are included. The model also includes output amplified spontaneous emission noise and allows important system parameters such as signal-to-noise ratio and noise figure to be estimated. A number of applications of the model are presented in which good agreement between theoretical and experimental results is demonstrated.
The theory of four-wave mixing (FWM) in the quantum dot (QD) semiconductor optical amplifiers (SOAs) is discussed by combining the QD rate equations system, the quantum-mechanical density-matrix theory, and the pulse propagation in QD SOAs including the three region of QD structure ground state (GS), excited state (ES), and wetting layer. Also, relations for differential gain, gain integral, and nonlinear susceptibility of both pump, probe, and signal pulses were discussed. Gain and differential gain have been calculated for QD structure. FWM efficiency and its components [spectral hole burning (SHB), carrier heating, and carrier density pulsation] are calculated. It is found that inclusion of ES in the formulas and in the calculations is essential since it works as a carrier reservoir for GS. It is found that QD SOA with enough capture time from ES to GS will reduce the SHB component, and so it is suitable for telecommunication applications that require symmetric conversion and independent detuning.
Using a self-consistent delay-differential-equation model for the description of the nonlinear light propagation in InAs/InGaAs quantum-dot-in-a-well semiconductor optical amplifiers, we analyze the amplifier in a four-wave-mixing setup in terms of the conversion efficiency. Our model allows us to extract the hierarchy of nonlinear effects that constitute the four-wave-mixing process. We show that spectral hole burning in the quantum-dot medium facilitates wavelength conversion over a spectral detuning of several THz, whereas the effect of carrier heating and global carrier-density pulsations is found to be negligible. Furthermore we show that for high optical field amplitudes the emergence of Rabi oscillations leads to a flattening of the conversion efficiency, potentially allowing for ultra-broadband wavelength conversion and frequency comb generation.
We investigate the interplay of multiwave-mixing processes with the microscopically coupled spatiotemporal light field and charge carrier dynamics in broad-area semiconductor laser amplifiers. Our theoretical description is based on extended spatially resolved Maxwell-Bloch equations including on the microscopic level spatiotemporal multiwave-mixing processes. Performing a third-order expansion in terms of the microscopic carrier distribution, we include in our description both the effects of population pulsations of the total carrier density at the beat frequency and the spatiospectral interactions of the light fields leading to gain nonlinearities as well as spatial and spectral hole burning. Our simulations show that in a broad-area semiconductor laser amplifier, spatiotemporal wave-mixing processes occur in both transverse and propagation directions of the multifrequency optical beams employed in a typical excite-probe configuration.
The theory of nondegenerate four-wave mixing (NDFWM) in semiconductor lasers and amplifiers is presented with particular emphasis on the physical processes that lead to population pulsations. In the case of nearly degenerate four-wave mixing, modulation of the carrier density at the beat frequency Ω of the pump and probe waves creates a dynamic population grating whose effectiveness is governed by the spontaneous carrier lifetime τs. Such a grating affects both the gain and the refractive index of the probe wave. In particular, the probe gain exhibits features analogous to those observed in a detuned atomic system arising from the optical Stark effect. Both the gain grating and the index grating contribute to NDFWM, with the dominant contribution coming from the index grating. For detunings such that Ωτs ≫ 1, population pulsations correspond to modulation of the intraband population arising from spectral hole burning. Our results show that NDFWM is then limited by the phase-mismatch effects governed by the transit time τ rather than by the intraband population-relaxation time T1. Significant NDFWM is expected to occur for detunings up to about 300 GHz for typical transit-time values of 3 psec in semiconductor lasers.
Nondegenerate four-wave mixing is measured in the 1.5 mu m traveling-wave semiconductor optical amplifier medium as a function of the pump-probe detuning frequency ranging from a few GHz to 400 GHz. It is found that two different sources are responsible for the four-wave mixing: the carrier density modulation and the nonlinear gain effect. The latter is clearly observed when the detuning frequency increases above 100 GHz. The nonlinear gain coefficient epsilon , which induces a gain grating through the pump-probe beating, is estimated to be 1.75*10/sup -23/ m/sup 3/. The change in the real refractive index associated with the nonlinear gain effect, which generates an index grating, is negligibly small. The relaxation time involved in the nonlinear gain effect is found to be less than 0.3 ps. These results support the role of the spectral hole burning rather than the carrier heating in the nonlinear gain effect.>