Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

International Conference on Optical MEMS and Nanophotonics

Fabrication of wall-coated Cs vapor cells for a chip-scale atomic clock

Madoka Hasegawa, P. Dziuban, Ł. Nieradko, A. Douahi, Christophe Gorecki, V. Giordano

Published Aug 1, 2008• 4 citations
Publisher

Abstract

Cesium vapor microcells incorporating a Cs dispenser were fabricated. An organosilane monolayer was successfully applied to the microcell walls as an anti-relaxation coating to improve the relaxation time of Cs atoms.
DOI
10.1109/omems.2008.4607879

Related papers

Micro-fabricated Alkali Vapor Cells for Chip Scale Atomic Clocks Sealed at Low Temperature with Thin-Film Metallic Bonding

Rahel Strässle, Matthieu Pellaton, Yves Pétremand +4 more

Micro-fabriced alkali vapor cells and applications in various fields as the heart of ultraprecise sensors, like chip scale atomic clocks, magnetometers or gyroscopes. Miniaturization asks for either new fabrication techniques or new physical concepts or both. We present here a new fabrication technique for the alkali cells which allows the integration of a anti-relaxation wall coating for alkali vapor cells in order to improve the signal for miniazurized cells.

•Jan 1, 2013•0 citations

High quality anti-relaxation coating material for alkali atom vapor cells

M. V. Balabas, Kasper Jensen, Wojciech Wasilewski +5 more

We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C=C bond plays a crucial role in such improvement of anti-relaxation coating quality.

•Mar 15, 2010•46 citations

High quality anti-relaxation coating material for alkali atom vapor cells

M. V. Balabas, K. Jensen, W. Wasilewski +5 more

We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C = C bond plays a crucial role in such improvement of anti-relaxation coating quality.

arXiv:0911.5274•Optics Express•Mar 9, 2010•81 citations

Microfabricated alkali vapor cell with anti-relaxation wall coating

Rahel Straessle, Matthieu Pellaton, C. Affolderbach +4 more

We present a microfabricated alkali vapor cell equipped with an anti-relaxation wall coating. The anti-relaxation coating used is octadecyltrichlorosilane and the cell was sealed by thin-film indium-bonding at a low temperature of 140 °C. The cell body is made of silicon and Pyrex and features a double-chamber design. Depolarizing properties due to liquid Rb droplets are avoided by confining the Rb droplets to one chamber only. Optical and microwave spectroscopy performed on this wall-coated cell are used to evaluate the cell's relaxation properties and a potential gas contamination. Double-resonance signals obtained from the cell show an intrinsic linewidth that is significantly lower than the linewidth that would be expected in case the cell had no wall coating but only contained a buffer-gas contamination on the level measured by optical spectroscopy. Combined with further experimental evidence this proves the presence of a working anti-relaxation wall coating in the cell. Such cells are of interest for applications in miniature atomic clocks, magnetometers, and other quantum sensors.

Applied Physics Letters•Jul 28, 2014•71 citations

Characterization of high-temperature performance of cesium vapor cells with anti-relaxation coating

Wenhao Li, M. V. Balabas, Xiang Peng +4 more

Vapor cells with antirelaxation coating are widely used in modern atomic physics experiments due to the coating's ability to maintain the atoms' spin polarization during wall collisions. We characterize the performance of vapor cells with different coating materials by measuring longitudinal spin relaxation and vapor density at temperatures up to 95 °C. We infer that the spin-projection-noise-limited sensitivity for atomic magnetometers with such cells improves with temperature, which demonstrates the potential of antirelaxation coated cells in applications of future high-sensitivity magnetometers.

arXiv:1609.04867•Journal of Applied Physics•Feb 13, 2017•47 citations

Effect of anti-relaxation coatings on EIT-based quantum memory in Cs vapor cells

Changhoon Park, Jing Su, Stanley Hsu +4 more

Electromagnetically induced transparency (EIT) is a promising approach for implementing quantum memory, a key component of quantum communication networks. However, its storage time is limited by decoherence, primarily due to atomic motion. Anti-relaxation coatings can mitigate decoherence by minimizing atom-wall interactions. In this study, we experimentally investigate EIT-based quantum memory in cesium vapor cells with different anti-relaxation coatings. We compare the EIT characteristics and storage behavior across different coatings to assess their suitability for quantum memory applications.

Quantum Communications and Quantum Imaging•Sep 18, 2025•1 citation
We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C=C bond plays a crucial role in such improvement of anti-relaxation coating quality.
We present an experimental investigation of alkali atom vapor cells coated with a high quality anti-relaxation coating material based on alkenes. The prepared cells with single compound alkene based coating showed the longest spin relaxation times which have been measured up to now with room temperature vapor cells. Suggestions are made that chemical binding of a cesium atom and an alkene molecule by attack to the C = C bond plays a crucial role in such improvement of anti-relaxation coating quality.
We present a microfabricated alkali vapor cell equipped with an anti-relaxation wall coating. The anti-relaxation coating used is octadecyltrichlorosilane and the cell was sealed by thin-film indium-bonding at a low temperature of 140 °C. The cell body is made of silicon and Pyrex and features a double-chamber design. Depolarizing properties due to liquid Rb droplets are avoided by confining the Rb droplets to one chamber only. Optical and microwave spectroscopy performed on this wall-coated cell are used to evaluate the cell's relaxation properties and a potential gas contamination. Double-resonance signals obtained from the cell show an intrinsic linewidth that is significantly lower than the linewidth that would be expected in case the cell had no wall coating but only contained a buffer-gas contamination on the level measured by optical spectroscopy. Combined with further experimental evidence this proves the presence of a working anti-relaxation wall coating in the cell. Such cells are of interest for applications in miniature atomic clocks, magnetometers, and other quantum sensors.
Vapor cells with antirelaxation coating are widely used in modern atomic physics experiments due to the coating's ability to maintain the atoms' spin polarization during wall collisions. We characterize the performance of vapor cells with different coating materials by measuring longitudinal spin relaxation and vapor density at temperatures up to 95 °C. We infer that the spin-projection-noise-limited sensitivity for atomic magnetometers with such cells improves with temperature, which demonstrates the potential of antirelaxation coated cells in applications of future high-sensitivity magnetometers.
Electromagnetically induced transparency (EIT) is a promising approach for implementing quantum memory, a key component of quantum communication networks. However, its storage time is limited by decoherence, primarily due to atomic motion. Anti-relaxation coatings can mitigate decoherence by minimizing atom-wall interactions. In this study, we experimentally investigate EIT-based quantum memory in cesium vapor cells with different anti-relaxation coatings. We compare the EIT characteristics and storage behavior across different coatings to assess their suitability for quantum memory applications.