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IEEE Silicon Nanoelectronics Workshop

Single shot measurement in silicon single electron transistors

T. Ferrus, D. A. Williams, D. G. Hasko, L. Creswell, Richard J. Collier, A. Lam, Q. Morrissey, S. R. Burge, Marcus J. French, G. Andrew D. Briggs

Published Jun 1, 2008• 0 citations
Publisher

Abstract

A major problem of usual current measurement setup is the severe limitations on the bandwidth due to room temperature electronics. This restricts the practical measurement rate to below 10 Hz and makes impossible to observe the evolution of a quantum state in real time. Here we describe a measurement on a silicon single electron transistor (SET) carried out using a custom CMOS measurement circuit in close proximity to the device under test. Both the device and the CMOS circuit are maintained in the same cryogenic environment. Quantum mechanical states in the single electron transistor (SET) were mapped by continuous microwave spectroscopy. The real time evolution of a particularly long lived quantum mechanical state was observed in a single shot measurement, made possible by the much faster measurement rate. This technique will shortly be applied to the measurement of coherent states in a charge qubit device made of a silicon double dot.

DOI
10.1109/snw.2008.5418454

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A major problem of usual current measurement setup is the severe limitations on the bandwidth due to room temperature electronics. This restricts the practical measurement rate to below 10 Hz and makes impossible to observe the evolution of a quantum state in real time. Here we describe a measurement on a silicon single electron transistor (SET) carried out using a custom CMOS measurement circuit in close proximity to the device under test. Both the device and the CMOS circuit are maintained in the same cryogenic environment. Quantum mechanical states in the single electron transistor (SET) were mapped by continuous microwave spectroscopy. The real time evolution of a particularly long lived quantum mechanical state was observed in a single shot measurement, made possible by the much faster measurement rate. This technique will shortly be applied to the measurement of coherent states in a charge qubit device made of a silicon double dot.
We have fabricated a custom cryogenic complementary metal-oxide-semiconductor integrated circuit that has a higher measurement bandwidth compared to conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorus-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90μs are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing.
The Single Electron Transistor holds the potential to be a suitable readout device for future solid-state quantum computers. The low temperature measurement results of a 0.5 μm Silicon-On-Sapphire CMOS circuit designed to interface with a Single Electron Transistor are presented. Careful design of the experimental set-up is critical for conducting the circuit test and performance measurements at cryogenic temperatures. The circuit operates at 4 K and achieves single-shot readout with a resolution in the order of one nanoampere. A detection delay as low as 1.5 μs is recorded while dissipating only 20-30 μW power.
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We present a realization of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single electron transistor. A single shot technique is successfully implemented and used to observe the real-time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analyzed.
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Among the potential physical implementations of quantum bits (qubits) solid state devices appear most promising for large scale applications and integration in electronic circuits. Devices based on low-capacitance Josephson junctions exploit the coherence of the superconducting state, combined with the possibility to control individual charges by Coulomb blockade effects. The logical states in these systems differ by one Cooper-pair charge. Single- and two-bit operations can be performed by applying a sequence of gate voltages. The phase coherence time is sufficiently long to allow a series of these steps. If, in addition, the strength of the Josephson coupling is controlled (e.g. by currents in SQUID loops) the system is ideal for quantum computation. Recent experiments by Nakamura et al. show the feasibility of this approach. In addition to the manipulations of qubits the resulting quantum state has to be read out. This quantum measurement process can be accomplished by coupling a single-electron transistor (SET) capacitively to the qubit. We investigate the process by analyzing the time-evolution of the density matrix of the coupled system. The measurement process is characterized by three time scales: the dephasing time, which is fast when a dissipative current flows in the SET, a longer ‘measurement time’ needed to read out the signal, and a third, even longer ‘mixing time’, characterizing measurement induced transitions which destroy the information about the initial quantum state. The noise spectrum of the current in the SET displays these time scales and allows their direct observation.