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IEEE MTT-S International Microwave Symposium digest

Requirements for noise parameter measurements in superconducting electronic systems

Joan M. O'Callaghan, James B. Beyer

Published Dec 9, 2002• 1 citation
Publisher

Abstract

General considerations on the measurement of noise parameters in highly mismatched systems are discussed. In particular, the problem of noise characterization of active superconducting microwave devices is addressed. A measurement technique that includes an error analysis is presented along with current data for a superconducting flux flow transistor.>

DOI
10.1109/mwsym.1991.146971

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General considerations on the measurement of noise parameters in highly mismatched systems are discussed. In particular, the problem of noise characterization of active superconducting microwave devices is addressed. A measurement technique that includes an error analysis is presented along with current data for a superconducting flux flow transistor.>
The noise parameters of a high-temperature superconducting (HTS) flux flow transistor made of TlBaCaCuO operating at 77 K and 3-5 GHz were experimentally determined. It is assumed that the dominant noise mechanism of the device, which is based on an array of weak links with a magnetic control line, is due to the statistical nature of flux nucleation and motion in the links. The noise parameters dictate the dependence of the noise figure on the source impedance, and are calculated by measuring source impedances. Sensitivity analysis is used to estimate the accuracy of the measurements. The measurements indicate a minimum noise figure of less than 1 dB at 3 GHz.
Microwave two-port S-parameter measurements and modeling were performed on superconducting flux flow transistors. These transistors, based on the magnetic control of flux flow in an array of high-temperature superconducting weak links, can exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive, while the output impedance is resistive and inductive. These devices are potentially useful in numerous applications, including matched amplifiers.>
Microwave two-port S-parameter measurements and modeling of superconducting flux flow transistors are presented. The transistors, based on the magnetic control of flux flow in any array of high temperature superconducting weak links, exhibit significant available power gain at microwave frequencies (over 20 dB at 7-10 GHz in some devices). The input impedance is largely inductive while the output impedance is both resistive and inductive. It is shown that the characteristics of these devices are useful in numerous applications including matched amplifiers, phase shifters and active impedance convertors.>
Superconducting qubits, though promising for both near-term problem-solving as well as the development of large-scale quantum computing systems, are limited in performance largely by materials-induced decoherence channels which are maximized at millikelvin temperatures, single photon powers, and microwave frequencies. Superconducting microwave resonators are ideal tools for measuring these materials losses due to their simplicity, well-understood behavior, and sensitivity to these same losses. In order to better understand and mitigate dominant qubit decoherence channels, accurate and precise characterization of superconducting microwave resonator performance is critical. In this paper, current measurement techniques for superconducting microwave resonators are discussed, including experimental set-up, error analysis, and cryogenic calibration of a vector network analyzer.
We propose a new type of cryogenic current amplifiers, in which low-frequency power spectrum of current can be measured through a measurement of microwave response of a superconducting resonant circuit shunted by a series array of Josephson junctions. From numerical analysis on the equivalent circuit, the numerical value of the input-referred current noise of the proposed amplifier is found to be two orders of magnitude lower than the noise floor measured with the conventional cryogenic current amplifiers based on high-electron-mobility transistors or superconducting quantum interference devices. Our proposal can open new avenues for investigating low-temperature solid-state devices that require lower noise and wider bandwidth power spectrum measurements of current.
The subject of electronic noise in high- superconducting Josephson devices and in their applications is considered. Several types of grain boundary junctions, prepared in different ways by four separate international laboratories, are fully characterized in terms of their electrical and noise properties at a range of temperatures, frequencies, magnetic fields and in the presence of microwaves. Similar characterization is carried out for multijunction Josephson flux-flow arrays, and bi-epitaxial SQUIDs. The theory of Likharev and Semenov for thermal noise in low- junctions is adopted as a reference against which excess noise can be identified in high- junctions. It is combined with theoretical models of excess noise based on fluctuations of critical current and resistance to provide accurate fitting of the observed noise curves. It is shown that the normalized levels of critical current and normal resistance fluctuations for all of the junction types examined are remarkably close (typically around and at 100 Hz) and are nearly independent of temperature in the range T = 30 - 80 K. The frequency dependence is close to the universal 1/f law with some deviations due to trapping of charge carriers at discrete states in the tunnelling barrier. Measurements of voltage noise levels and critical current fluctuations in multijunction flux-flow amplifiers, reported for the first time, are consistent with levels in single junctions of the same type. Excess noise is studied as a function of external magnetic field, in a way that has not been previously described. A new interpretation of the magnetic field-dependent noise data indicates that absolute levels of critical current fluctuations are nearly independent of applied magnetic field. This observation does not appear to have been reported elsewhere. It has important implications for the operation of grain boundary Josephson devices in real applications. Voltage noise in the presence of microwave irradiation, at operating points between Shapiro steps, is consistent with a modified form of the Likharev - Semenov equation which takes into account the known level of critical current fluctuations as measured in field-free conditions. The implications of these results for further improvements in device performance are discussed, and directions for further work are suggested.