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.A 550-GHZ DUAL POLARIZED QUASI-OPTICAL SIS MIXER

Goutam Chattopadhyay, David A. B. Miller, Jonas Stasys Zmuidzinas, Henry George LeDuc

Published Mar 1, 1999• 7 citations
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Abstract

We describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor insulator superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel crossslot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180 hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer, and therefore, for each polarization there are two IF outputs and four junctions, for a total of eight junctions on the chip. Due to the mixer structure and the use of series bias of the junction pairs, it turns out that the two IF outputs for a given polarization are 180 out of phase, requiring a 180 hybrid to combine the IF outputs. The hybrid is implemented using a combination of lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer (FTS) measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and crosspolarized patterns for both polarizations also agree well with the theoretical predictions. The noise performance of the dual polarized mixer is excellent, giving uncorrected receiver noise temperature of better than 115K (DSB) at 528 GHz for both the polarizations.

Related papers

A dual-polarized quasi-optical SIS mixer at 550 GHz

Goutam Chattopadhyay, D. Miller, Henry George LeDuc +1 more

In this paper, we describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor-insulator-superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel cross-slot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180/spl deg/ hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer. The 180/spl deg/ IF hybrid is implemented using a lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and cross-polarized patterns for both polarizations also agree with the theoretical predictions. The noise performance of the dual-polarized mixer is excellent giving uncorrected receiver noise temperature of better than 115 K (double sideband) at 528 GHz for both the polarizations.

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Characterization of low-noise quasi-optical SIS mixers for the submillimeter band

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We report on the development of low-noise quasi-optical SIS mixers for the frequency range 400-850 GHz. The mixers utilize twin-slot antennas, two-junction tuning circuits, and Nb-trilayer junctions. Fourier-transform spectrometry has been used to verify that the frequency response of the devices is well predicted by computer simulations. The 400-850 GHz frequency band can be covered with four separate fixed-tuned mixers. We measure uncorrected double-sideband receiver noise temperatures around 5h/spl nu//k/sub B/ to 700 GHz, and better than 540 K at 808 GHz. These results are among the best reported to date for broadband heterodyne receivers.

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Quasi-optical SIS mixers with normal metal tuning structures

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We recently reported (1996) a quasi-optical SIS mixer which used Nb/Al-oxide/Nb tunnel junctions and a normal-metal (Al) tuning circuit to achieve an uncorrected receiver noise temperature of 840 K (DSB) at 1042 GHz. Here we present results on several different device designs, which together cover the 300-1200 GHz frequency range. The mixers utilize an antireflection-coated silicon hyper-hemispherical lens, a twin-slot antenna, and a two-junction tuning circuit. The broad-band frequency response was measured using Fourier transform spectrometry (FTS), and is in good agreement with model calculations. Heterodyne tests were carried out from 400 GHz up to 1040 GHz, and these measurements agree well with the FTS results and with calculations based on Tucker's theory (1985).

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Low-noise 1 THz niobium superconducting tunnel junction mixer with a normal metal tuning circuit

M. Bin, Michael C. Gaidis, Jonas Stasys Zmuidzinas +2 more

We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.

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Slot antenna SIS mixers for submillimeter wavelengths

Jonas Stasys Zmuidzinas, Henry George LeDuc, Jeff A. Stern

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Softwaretechnik-Trends•Jan 1, 1992•4 citations

MM wave quasioptical SIS mixers

Qing Hu, C. A. Mears, P. L. Richards +1 more

The authors have tested the performance of planar SIS (superconductor-insulator-superconductor) mixers with log-periodic antennas at near millimeter and submillimeter wave frequencies from 90 to 360 GHz. The large omega R/sub N/C product ( approximately 10 at 90 GHz) of the Nb/NbO/sub x//Pb-In-Au junctions requires an integrated inductive tuning element to resonate the junction capacitance at the operating frequencies. Two types of integrated tuning element were used which were designed with the aid of measurements using a Fourier transform spectrometer. Preliminary results indicate that the tuning elements can give very good mixer performance up to at least 200 GHz. An inductive wire in parallel with a 5-junction array gives a minimum mixer noise temperature of 115 K (DSB) at 90 GHz with a FWHM (full width at half maximum) bandwidth of 8 GHz. An open-ended microstrip stub in parallel with a single junction gives minimum mixer noise temperatures at 150 and 200 K (DSB) near 90 and 180 GHz with FWHM bandwidths of 4 and 3 GHz, respectively. The relatively high mixer noise temperatures compared to those of waveguide SIS mixers in a similar frequency range are attributed mainly to the losses in the optical system.>

IEEE Transactions on Magnetics•Mar 1, 1989•32 citations
We describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor insulator superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel crossslot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180 hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer, and therefore, for each polarization there are two IF outputs and four junctions, for a total of eight junctions on the chip. Due to the mixer structure and the use of series bias of the junction pairs, it turns out that the two IF outputs for a given polarization are 180 out of phase, requiring a 180 hybrid to combine the IF outputs. The hybrid is implemented using a combination of lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer (FTS) measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and crosspolarized patterns for both polarizations also agree well with the theoretical predictions. The noise performance of the dual polarized mixer is excellent, giving uncorrected receiver noise temperature of better than 115K (DSB) at 528 GHz for both the polarizations.
In this paper, we describe the design, fabrication, and the performance of a low-noise dual-polarized quasi-optical superconductor-insulator-superconductor (SIS) mixer at 550 GHz. The mixer utilizes a novel cross-slot antenna on a hyperhemispherical substrate lens, two junction tuning circuits, niobium trilayer junctions, and an IF circuit containing a lumped element 180/spl deg/ hybrid. The antenna consists of an orthogonal pair of twin-slot antennas, and has four feed points, two for each polarization. Each feed point is coupled to a two-junction SIS mixer. The 180/spl deg/ IF hybrid is implemented using a lumped element/microstrip circuit located inside the mixer block. Fourier transform spectrometer measurements of the mixer frequency response show good agreement with computer simulations. The measured co-polarized and cross-polarized patterns for both polarizations also agree with the theoretical predictions. The noise performance of the dual-polarized mixer is excellent giving uncorrected receiver noise temperature of better than 115 K (double sideband) at 528 GHz for both the polarizations.
We report on the development of low-noise quasi-optical SIS mixers for the frequency range 400-850 GHz. The mixers utilize twin-slot antennas, two-junction tuning circuits, and Nb-trilayer junctions. Fourier-transform spectrometry has been used to verify that the frequency response of the devices is well predicted by computer simulations. The 400-850 GHz frequency band can be covered with four separate fixed-tuned mixers. We measure uncorrected double-sideband receiver noise temperatures around 5h/spl nu//k/sub B/ to 700 GHz, and better than 540 K at 808 GHz. These results are among the best reported to date for broadband heterodyne receivers.
We recently reported (1996) a quasi-optical SIS mixer which used Nb/Al-oxide/Nb tunnel junctions and a normal-metal (Al) tuning circuit to achieve an uncorrected receiver noise temperature of 840 K (DSB) at 1042 GHz. Here we present results on several different device designs, which together cover the 300-1200 GHz frequency range. The mixers utilize an antireflection-coated silicon hyper-hemispherical lens, a twin-slot antenna, and a two-junction tuning circuit. The broad-band frequency response was measured using Fourier transform spectrometry (FTS), and is in good agreement with model calculations. Heterodyne tests were carried out from 400 GHz up to 1040 GHz, and these measurements agree well with the FTS results and with calculations based on Tucker's theory (1985).
We describe a 1 THz quasioptical SIS mixer which uses a twin-slot antenna, an antireflection-coated silicon hyperhemispherical lens, Nb/Al-oxide/Nb tunnel junctions, and an aluminum normal-metal tuning circuit in a two-junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double-sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz.
We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.
The authors have tested the performance of planar SIS (superconductor-insulator-superconductor) mixers with log-periodic antennas at near millimeter and submillimeter wave frequencies from 90 to 360 GHz. The large omega R/sub N/C product ( approximately 10 at 90 GHz) of the Nb/NbO/sub x//Pb-In-Au junctions requires an integrated inductive tuning element to resonate the junction capacitance at the operating frequencies. Two types of integrated tuning element were used which were designed with the aid of measurements using a Fourier transform spectrometer. Preliminary results indicate that the tuning elements can give very good mixer performance up to at least 200 GHz. An inductive wire in parallel with a 5-junction array gives a minimum mixer noise temperature of 115 K (DSB) at 90 GHz with a FWHM (full width at half maximum) bandwidth of 8 GHz. An open-ended microstrip stub in parallel with a single junction gives minimum mixer noise temperatures at 150 and 200 K (DSB) near 90 and 180 GHz with FWHM bandwidths of 4 and 3 GHz, respectively. The relatively high mixer noise temperatures compared to those of waveguide SIS mixers in a similar frequency range are attributed mainly to the losses in the optical system.>