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Slot antenna SIS mixers for submillimeter wavelengths

Jonas Stasys Zmuidzinas, Henry George LeDuc, Jeff A. Stern

Published Jan 1, 1992• 4 citations
OpenAlex

Abstract

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Related papers

Quasi-optical slot antenna SIS mixers

Jonas Stasys Zmuidzinas, Henry George LeDuc

A quasi-optical SIS mixer designed for efficient radiation coupling is described. The mixer uses a twin-slot antenna which has the advantages of a good beam pattern and a low impedance. The radiation and impedance characteristics of the antenna were obtained from a moment-matched calculation. Tapered superconducting microstrip transmission lines are used to carry the radiation from the slot antennas to the tunnel junction. The effective impedance seen by the tunnel junction is quite low, about 4 Omega , which allows micron-size junctions to be used at 500 GHz. The mixers have been fabricated using Nb/Al-oxide/Nb tunnel junctions and a receiver noise temperature of 420 K (DSB) was measured at 490 GHz, which is the best yet obtained for a quasi-optical mixer at this frequency. The comparatively large junction area increases the mixer saturation power and allows strong suppression of noise from the Josephson effect by the application of a magnetic field of modest strength.>

IEEE Transactions on Microwave Theory and Techniques•Jan 1, 1992•185 citations

Quasi-optical Slot Antenna SIS Mixers

Jonas Stasys Zmuidzinas

Abstract-We describe a new quasi-optical SIS mixer de-signed for efficient radiation coupling. The mixer uses a twin-slot antenna which has the advantages of a good beam pattern and a low impedance. The radiation and impedance character-istics of the antenna were obtained from a moment-method cal-culation. Tapered superconducting microstrip transmission lines are used to carry the radiation from the slot antennas to the tunnel junction. The effective impedance seen by the tunnel junction is quite low, about 4 R, which allows micron-size junc-tions to be used at 500 GHz. The mixers have been fabricated using Nb/Al-oxide/Nb tunnel junctions and a receiver noise temperature of 420 K (DSB) was measured at 490 GHz, which is the best yet obtained for a quasi-optical mixer at this fre-quency. The comparatively large junction area increases the mixer saturation power and allows strong suppression of noise from the Josephson effect by the application of a magnetic field of modest strength. I.

•Feb 1, 1991•5 citations

Low-noise slot antenna SIS mixers

Jonas Stasys Zmuidzinas, N. G. Ugras, D. Miller +3 more

We describe quasi-optical SIS mixers operating in the submillimeter band (500-750 GHz) which have very low noise, around 5 h/spl nu//k/sub B/ for the double-sideband receiver noise temperature. The mixers use a twin-slot antenna, Nb/Al-Oxide/Nb tunnel junctions fabricated with optical lithography, a two-junction tuning circuit, and a silicon hyperhemispherical lens with a novel antireflection coating to optimize the optical efficiency. We have flown a submillimeter receiver using these mixers on the Kuiper Airborne Observatory, and have detected a transition of H/sub 2//sup 18/O at 745 GHz. This directly confirms that SIS junctions are capable of low-noise mixing above the gap frequency.>

IEEE Transactions on Applied Superconductivity•Jun 1, 1995•56 citations

Design and Characterization of Two-Junction Tuning Circuits for Submillimeter SIS Mixers

Michael C. Gaidis, M. Bin, David A. B. Miller +3 more

We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens

•Mar 1, 1995•2 citations

Quasi-optical log-periodic antenna SIS mixers for the 100 GHz band

Yoshinori Uzawa, Taiichiro Noguchi, Akira Kawakami +1 more

We designed and tested a quasi-optical SIS mixer that incorporates a substrate lens for the 100 GHz band. The mixer uses a planar self-complementary log-periodic antenna with an integrated tuning circuit. The antenna has a frequency independent impedance of around over several octaves. The tuning circuit consists of two SIS junctions connected in parallel through a superconducting stripline inductor for tuning out the junction capacitances and a impedance transformer for matching the junction resistance to the antenna impedance. The SIS junctions are and have an area of and a current density of . The IF output from the mixer is brought out in a balanced way at each edge of the antenna, and is coupled to a cooled low-noise amplifier through a balun transformer by using a hybrid coupler. A double-sideband receiver noise temperature less than 130 K was measured from 85 to 110 GHz. The best noise temperature was 90 K at 101 GHz, which is the same as for waveguide receivers.

Superconductor Science and Technology•Apr 1, 1996•5 citations

Quasi-optical NbN/AlN/NbN mixers in submillimeter wave band

Yoshinori Uzawa, Z. Wang, Akira Kawakami

We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.

IEEE Transactions on Applied Superconductivity•Jun 1, 1997•14 citations
We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.
A quasi-optical SIS mixer designed for efficient radiation coupling is described. The mixer uses a twin-slot antenna which has the advantages of a good beam pattern and a low impedance. The radiation and impedance characteristics of the antenna were obtained from a moment-matched calculation. Tapered superconducting microstrip transmission lines are used to carry the radiation from the slot antennas to the tunnel junction. The effective impedance seen by the tunnel junction is quite low, about 4 Omega , which allows micron-size junctions to be used at 500 GHz. The mixers have been fabricated using Nb/Al-oxide/Nb tunnel junctions and a receiver noise temperature of 420 K (DSB) was measured at 490 GHz, which is the best yet obtained for a quasi-optical mixer at this frequency. The comparatively large junction area increases the mixer saturation power and allows strong suppression of noise from the Josephson effect by the application of a magnetic field of modest strength.>
Abstract-We describe a new quasi-optical SIS mixer de-signed for efficient radiation coupling. The mixer uses a twin-slot antenna which has the advantages of a good beam pattern and a low impedance. The radiation and impedance character-istics of the antenna were obtained from a moment-method cal-culation. Tapered superconducting microstrip transmission lines are used to carry the radiation from the slot antennas to the tunnel junction. The effective impedance seen by the tunnel junction is quite low, about 4 R, which allows micron-size junc-tions to be used at 500 GHz. The mixers have been fabricated using Nb/Al-oxide/Nb tunnel junctions and a receiver noise temperature of 420 K (DSB) was measured at 490 GHz, which is the best yet obtained for a quasi-optical mixer at this fre-quency. The comparatively large junction area increases the mixer saturation power and allows strong suppression of noise from the Josephson effect by the application of a magnetic field of modest strength. I.
We describe quasi-optical SIS mixers operating in the submillimeter band (500-750 GHz) which have very low noise, around 5 h/spl nu//k/sub B/ for the double-sideband receiver noise temperature. The mixers use a twin-slot antenna, Nb/Al-Oxide/Nb tunnel junctions fabricated with optical lithography, a two-junction tuning circuit, and a silicon hyperhemispherical lens with a novel antireflection coating to optimize the optical efficiency. We have flown a submillimeter receiver using these mixers on the Kuiper Airborne Observatory, and have detected a transition of H/sub 2//sup 18/O at 745 GHz. This directly confirms that SIS junctions are capable of low-noise mixing above the gap frequency.>
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens
We designed and tested a quasi-optical SIS mixer that incorporates a substrate lens for the 100 GHz band. The mixer uses a planar self-complementary log-periodic antenna with an integrated tuning circuit. The antenna has a frequency independent impedance of around over several octaves. The tuning circuit consists of two SIS junctions connected in parallel through a superconducting stripline inductor for tuning out the junction capacitances and a impedance transformer for matching the junction resistance to the antenna impedance. The SIS junctions are and have an area of and a current density of . The IF output from the mixer is brought out in a balanced way at each edge of the antenna, and is coupled to a cooled low-noise amplifier through a balun transformer by using a hybrid coupler. A double-sideband receiver noise temperature less than 130 K was measured from 85 to 110 GHz. The best noise temperature was 90 K at 101 GHz, which is the same as for waveguide receivers.
We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.