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Superconductor Science and Technology

Quasi-optical log-periodic antenna SIS mixers for the 100 GHz band

Yoshinori Uzawa, Taiichiro Noguchi, Akira Kawakami, Z Wang

Published Apr 1, 1996• 5 citations
Publisher

Abstract

We designed and tested a quasi-optical SIS mixer that incorporates a substrate lens for the 100 GHz band. The mixer uses a planar self-complementary log-periodic antenna with an integrated tuning circuit. The antenna has a frequency independent impedance of around over several octaves. The tuning circuit consists of two SIS junctions connected in parallel through a superconducting stripline inductor for tuning out the junction capacitances and a impedance transformer for matching the junction resistance to the antenna impedance. The SIS junctions are and have an area of and a current density of . The IF output from the mixer is brought out in a balanced way at each edge of the antenna, and is coupled to a cooled low-noise amplifier through a balun transformer by using a hybrid coupler. A double-sideband receiver noise temperature less than 130 K was measured from 85 to 110 GHz. The best noise temperature was 90 K at 101 GHz, which is the same as for waveguide receivers.

DOI
10.1088/0953-2048/9/4a/036

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A planar, quasi-optical SIS (superconductor-insulator-superconductor) receiver operating at 230 GHz is described. The receiver consists of a 2*5 array of half-wave dipole antennas with niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4-GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. Accurate measurements of the performance of single untuned array receiver elements are reported. A mixer noise temperature of 89 K DSB (double sideband), receiver noise temperature of 156 K DSB and conversion loss of 8 dB into a matched load have been obtained. This mixer noise temperature is approximately a factor of two larger than that of current state of the art waveguide mixers using untuned single junctions a the same frequency.>

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•Mar 1, 1995•2 citations
We designed and tested a quasi-optical SIS mixer that incorporates a substrate lens for the 100 GHz band. The mixer uses a planar self-complementary log-periodic antenna with an integrated tuning circuit. The antenna has a frequency independent impedance of around over several octaves. The tuning circuit consists of two SIS junctions connected in parallel through a superconducting stripline inductor for tuning out the junction capacitances and a impedance transformer for matching the junction resistance to the antenna impedance. The SIS junctions are and have an area of and a current density of . The IF output from the mixer is brought out in a balanced way at each edge of the antenna, and is coupled to a cooled low-noise amplifier through a balun transformer by using a hybrid coupler. A double-sideband receiver noise temperature less than 130 K was measured from 85 to 110 GHz. The best noise temperature was 90 K at 101 GHz, which is the same as for waveguide receivers.
We have designed, fabricated and evaluated a quasi-optical SIS receiver with NbN/AlN/NbN tunnel junctions in the submillimeter-wave region. The receiver consists of a planar self-complementary log-periodic antenna and MgO hyperhemispherical lens with an anti-reflection cap for RF optics, NbN SIS junctions and a radial short stub tuner to resonate out its capacitance for RF matching. The prepared NbN SIS junction has a current density of 20 kA/cm/sup 2/ and is about 1 /spl mu/m in diameter, supplying a small /spl omega/C/sub J/R/sub N/ product (/spl omega/C/sub J/R/sub N/=3 at 300 GHz). From 297 to 356 GHz the average double sideband (DSB) receiver noise temperature measured by using the standard Y-factor method was about 200 K. The lowest receiver noise temperature, 167 K (DSB), was obtained at around 303 GHz. These results suggest that our NbN SIS junctions can be used for terahertz mixer elements instead of Nb SIS junctions.
We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.
An integrated quasioptical receiver circuit comprising planar complementary log-periodic antenna, SIS mixer with microstrip matching transformers and parallel array of unshunted SIS junctions operating as a local oscillator has been designed, fabricated and tested. The array of parallel SIS junctions united in a microstrip transmission line can be described as a Josephson transmission line (JTL) with single flux quanta synchronously moving along the array of quantum interferometers. The JTL with 20 junctions each 4 micrometers in diameter has critical current 4.5 mA, normal resistance 0.3 (Omega) and a self-detection step at about 1.1 mV. The step width is over 1.5 mA in current scale and 50 (mu) V in voltage scale that corresponds to about 1 (mu) W oscillation power and 25 GHz tuning range with 550 GHz central frequency. A current applied along the top electrode of the JTL allows to vary the output power of such oscillator. The advantages of such oscillator in comparison with Flux-FLow Oscillator are higher impedance of microstrip line about 10 (Omega) that makes easier matching to SIS mixer, lower losses at frequencies about the energy gap for Nb, narrow linewidth and the possibility to tune output power. THe SIS junction IV curve shows current steps at about 1.2 mV that corresponds to the matching circuit central frequency about 600 GHz that is close to JTL central frequency.
A quasi optical SIS mixer for the frequency band 400-550 GHz has been designed and successfully testedin a laboratory receiver setup. The intrinsic SIS junction capacitance was tuned out by a novel pair (twin) SISjunction compensation circuit. The 4µm2 area Nb-A10x-Nb junctions, with (oRnC product as high as 7.4 at500 GHz, were patterned by optical lithography and integrated with a equiangular spiral antenna to give broad- band SIS mixer operation. The receiver demonstrated flat response within the tuning range of the available LOsource (440 - 520 GHz) with DSB noise temperatures below 300 K over the entire band and with the best re- ceiver noise temperature below 250 K DSB at 453 GHz (measured at 3.5 K physical temperature). No mechani- cal tuning was employed in the SIS mixer. These noise temperatures include all losses and was measured atan IF center frequency of 1.5 GHz.
A planar, quasi-optical SIS (superconductor-insulator-superconductor) receiver operating at 230 GHz is described. The receiver consists of a 2*5 array of half-wave dipole antennas with niobium-aluminum oxide-niobium SIS junctions on a quartz dielectric-filled parabola. The 1.4-GHz intermediate frequency is coupled from the mixer via coplanar strip transmission lines and 4:1 balun transformers. The receiver is operated at 4.2 K in a liquid helium immersion cryostat. Accurate measurements of the performance of single untuned array receiver elements are reported. A mixer noise temperature of 89 K DSB (double sideband), receiver noise temperature of 156 K DSB and conversion loss of 8 dB into a matched load have been obtained. This mixer noise temperature is approximately a factor of two larger than that of current state of the art waveguide mixers using untuned single junctions a the same frequency.>
We report on the continuing development of submillimeter quasi-optical slot antenna SIS mixers which use two-junction tuning circuits [1]. The mixers use 10 kA/cm2 Nb/Al-Oxide/Nb junctions and Nb wiring, and have generated DSB receiver noise temperatures around 5hv/kB to 700 GHz, and 16hv/kB (620 K) at 798 GHz. We present Fourier-transform spectrometer (FTS) measurements and heterodyne measurements on several such devices. In general, the measured response at frequencies below the gap of Nb is in good agreement with the predicted performance. Introduction SIS mixers with Nb-trilayer tunnel junctions offer excellent performance at frequencies below 800 GHz, and should perform competitively at frequencies as high as 1.4 THz [2-5]. Our goal is to develop a suite of ultra-low-noise SIS mixers which cover frequencies from = 400 GHz to more than I THz. At frequencies below the Nb gap (< 700 GHz), existing devices perform quite well [6], but further improvements in noise temperatures remain important. In addition, it is quite useful to be able to predict device performance given the design parameters. One can then optimize the device design for a particular frequency band, and confirm that we indeed understand the physics of the device. Progress in the design and operation of devices in this frequency range is presented below. At frequencies above the Nb gap, RF photons can break Cooper pairs, resulting in greater signal loss and higher receiver noise temperatures. The loss is particularly important in the slender microstrip lines used to resonate the junction capacitance and to transform the antenna impedance down to the RF junction impedance. However, the actual coupling of radiation into Nb junctions above the gap should still be reasonably efficient -more than 30% at 800 GHz [7]. In addition to RF loss, one is also affected by increased dispersion at frequencies near the gap. The Nb microstriplines have therefore been carefully designed to ensure the desired bandpass is achieved. We demonstrate for the first time that all-Nb SIS receivers can have substantially better performance than GaAs Schottky receivers for the astronomically important CI ( P2 — P 1 ) and CO (7-6) transitions near 810 GHz. Receiver Configuration Since waveguide mixers become difficult to construct at short submillimeter wavelengths, we have adopted a quasi-optical approach. Here, lenses take the place of waveguide horns, and the incoming radiation is collected by a planar antenna on the SIS mixer substrate [8]. This offers several other advantages, such as on-chip broad-band silt a SS 114 SSE WA Wa Sta MX Dewar 120 Mylar Window SIS Mixer 295 IQ 77 K Mylar Load Bearnsplitter ICI 1= NZ IC =1 HEN1T Amplifier Polyethylene Lens