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Optics Letters

Theory of bistability in two-segment diode lasers

Mark E. Kuznetsov

Published Aug 1, 1985• 17 citations
Publisher

Abstract

Optical bistability in two-segment diode lasers with inhomogeneous injection is considered. Analytical solution of the rate-equation model gives a simple bistability condition. Slower carrier recombination in the absorber relative to the gain region is required for bistability when the gain and the absorber optical cross sections are equal. Carrier lifetimes, switch-on and switch-off powers, and currents are investigated for these bistable lasers.

DOI
10.1364/ol.10.000399

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Optical bistability in two-segment diode lasers with inhomogeneous injection is considered. Analytical solution of the rate-equation model gives a simple bistability condition. Slower carrier recombination in the absorber relative to the gain region is required for bistability when the gain and the absorber optical cross sections are equal. Carrier lifetimes, switch-on and switch-off powers, and currents are investigated for these bistable lasers.
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The perturbation method has been used to linearize the rate equations applicable to two-contact absorption bistable diode lasers. After adopting some approximations, explicit analytical expressions of the time evolutions for the carrier densities in the gain and absorption regions and the photon-flux density inside the cavity when the bistable laser is at the switch-on or switch-off state have been given. With these expressions, quantitative descriptions of the transient processes can be realized. Une methode perturbative est utilisee pour lineariser les equations dynamiques de diodes lasers bistables a deux contacts. Moyennant quelques approximations, on donne les expressions analytiques des evolutions temporelles des densites de porteurs dans les regions de gain et d'absorption ainsi que des densites de flux de photons a l'interieur de la cavite quand le laser bistable est dans l'etat allume ou eteint. Ces expressions permettent une description quantitative des effets transitoires.
Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold has been investigated both theoretically and experimentally. The OB result is found to be varied continuously from below to above threshold. Although conventionally the OB switch-off time in dispersive semiconductor laser amplifiers is limited by the effective carrier lifetime, a much faster OB switch-off can be obtained when a laser diode operates well above threshold in the injection-locked condition.>
The purpose of this paper is to provide a study of optical bistability in inhomogeneously pumped multiquantum well (MQW) laser diodes. To achieve this aim, gain and spontaneous emission data, calculated for a specific MQW laser material structure, have been incorporated into a model of an inhomogeneously pumped laser diode. Results are presented which show a number of differences between the bistable behaviour of MQW and bulk GaAs segmented devices. Experimental results are included to provide a basis for a qualitative comparison with the theoretical model.
The characteristics of the mode intensity and conditions for occurrence of optical bistability in a ring laser with a saturable absorber are considered. The rate equation approximation method is used to find analytic expressions for these characteristics. It is shown that changes in such physical parameters as the homogeneous and inhomogeneous broadening, coefficients of relaxation of amplifying and absorbing cells, etc. cause changes in the range of existence of optical bistability or a hysteresis cycle. The influence of inhomogeneous broadening and of spontaneous emission near the lasing threshold on the appearance of optical bistability is demonstrated for the single-mode regime.