Superconducting microstrip, with phase velocities of about 0.01c, employing kinetic inductance have been fabricated using niobium nitride and a silicon dielectric. Delay lines using this phenomenon have several advantages for analog signal processing, including low loss and very compact size. Measurements of kinetic inductance microstrip delay lines were made in the frequency domain and the time domain. The results were compared to theoretical predictions and an accurate circuit model was developed. The circuit model was used to determine the frequency- and temperature-dependent losses of the delay line.
Abstract We report on the development of a reliable NbN/Al/Nb/NbN multilayer fabrication technique for combining design elements with and without kinetic inductance in superconducting microwave circuits. As a proof-of-concept we demonstrate the application of the proposed technique to build a slow microwave propagation line matched to 50 Ω terminals. Fabrication details along with the design and measurements are discussed. At 8 GHz the presented device operates as a dc controllable full-turn phase shifter. We suggest that by exploiting the kinetic inductance as a design variable one can greatly improve operation parameters for a variety of standard microwave designs such as step-impedance filters and resonators.
We present measurements of the self- and mutual inductance of NbN and NbN/Nb bilayer inductors (microstrips, striplines, serpentines, etc.) with Nb ground plane(s) fabricated in an advanced process for superconductor electronics developed at MIT Lincoln Laboratory. In this process, the signal traces of logic cell inductors are made either of a 200-nm NbN layer with${{\bm{T}}}_{\bm{c}} \approx
15.5Koranin−situdepositedNbN/Nbbilayer,replacinga200−nmNblayerM6inthestandardSFQ5eeprocesswithninesuperconductinglayerson200−mmwafers.Nbgroundplanesarepreservedtomaintainahighlevelofinterlayershieldingandlowintralayermutualcoupling.Atwo−steppatterningofthetopNbandthebottomNbNlayersoftheNbN/Nbbilayerallowsthecreationofinductorswithaverywiderangeofinductances,fromlowvalues∼0.4pH/μmtypicalforNbgeometricalinductorsto∼35pH/μmtypicalforthin−filmkineticinductors.ThemutualinductanceofvariouscombinationsofNbN,Nb,andNbN/Nbinductorsdoesnotdependonsuperconductingpropertiesofthesignaltracesinthestudiedrangeoflinewidths,{\bm{w}}
;itequalsthemutualinductanceoftheNbinductorswiththeequivalentgeometryandplacementbetweenthegroundplanes.ThemeasuredmagneticfieldpenetrationdepthinNbNfilmsdepositedbyreactivesputteringat200°CisλNbN=491±5nm.Themeasuredkineticinductanceofthefilmswiththicknesses{\bm{t}}\ = {\bm{\ }}
200nmand150nm,respectively1.51pH/sqand2.06pH/sq,islargerthanthatexpectedforconventionalsuperconductorswithshortmeanfreepath,correspondingtoabout25{\bm{w}} < {\bm{\lambda }}_{{\bm{NbN}}}^2/{\bm{t}}$, indicating an insignificant effect of current crowding in the presence of superconducting ground plane(s). Implementing NbN and NbN/Nb kinetic inductors enables a significant increase in the integration scale of superconductor digital electronics.
We report on the fabrication and characterization of superconducting magnesium diboride (MgB2) thin films intended for quantum-limited devices based on non-linear kinetic inductance (NLKI) such as parametric amplifiers with either elevated operating temperatures or expanded frequency ranges. In order to characterize the MgB2 material properties, we have fabricated coplanar waveguide (CPW) transmission lines and microwave resonators using ≈40 nm thick MgB2 films with a measured kinetic inductance of ∼5.5 pH/□ and internal quality factors Qi≈3×104 at 4.2 K. We measure the NLKI in MgB2 by applying a DC bias to a 6 cm long by 4 μm wide CPW transmission line and measuring the resulting phase delay caused by the current dependent NLKI. We also measure the current dependent NLKI through CPW resonators that shift down in frequency with increased power applied through the CPW feedline. Using these measurements, we calculate the characteristic non-linear current parameter, I*, for multiple CPW geometries. We find values for corresponding current density, J*=12–22 MA/cm2, and a ratio of the critical current to the non-linear current parameter, IC/I*=0.14–0.26, similar to or higher than values for other superconductors such as NbTiN and TiN.
Abstract We fabricated a coplanar waveguide (CPW) using high temperature superconductor YBa2Cu3O7-δ (YBCO) and evaluated its characteristics for the realization of a superconducting parametric amplifier. A YBCO thin film with a film thickness of 200 nm was formed by the PLD method using a YAG laser on a 10 × 10 mm MgO substrate. The YBCO thin films were processed into the CPW shape with a line width of 8 μm, a gap width of 8 μm and a line length of 5 mm by photolithography and sputter etching. Using a network analyzer, phase differences of microwave were measured at dc current bias from 0 mA to 14 mA. From the measurement results, it was found that the phase difference decreased with increasing temperature. In addition, it was found that the phase shifts greatly varied near the superconducting transition temperature at each current bias. We observed a maximum phase difference Δθ of -0.08 rad at a bias current of 14.0 mA, which is the closest to the transition temperature. A parametric gain was estimated to be 0.15 dB from the measured maximum phase difference.
The W-Band (
75−110GHz) sky contains a plethora of information about star formation, galaxy evolution and the cosmic microwave background. We have designed and fabricated a dual-purpose superconducting circuit to facilitate the next generation of astronomical observations in this regime by providing proof-of-concept for both a millimeter-wave low-loss phase shifter, which can operate as an on-chip Fourier transform spectrometer (FTS) and a traveling wave kinetic inductance parametric amplifier (TKIP). Superconducting transmission lines have a propagation speed that depends on the inductance in the line which is a combination of geometric inductance and kinetic inductance in the superconductor. The kinetic inductance has a non-linear component with a characteristic current,
I∗, and can be modulated by applying a DC current, changing the propagation speed and effective path length. Our test circuit is designed to measure the path length difference or phase shift,
Δϕ, between two symmetric transmission lines when one line is biased with a DC current. To provide a measurement of
Δϕ, a key parameter for optimizing a high gain W-Band TKIP, and modulate signal path length in FTS operation, our
3.6×2.5cm chip employs a pair of
503mm long NbTiN inverted microstrip lines coupled to circular waveguide ports through radial probes. For a line of width
3μm and film thickness
20nm, we predict
Δϕ≈1767rad at
90GHz when biased at close to
I∗. We have fabricated a prototype with
200nm thick Nb film and the same line length and width. The predicted phase shift for our prototype is
Δϕ≈30rad at
90GHz when biased at close to
I∗ for Nb.