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IEEE Transactions on Applied Superconductivity

Effects of a DC-Power Layer Under a Ground Plane in SFQ Circuits

Hiroyuki Akaike, Akira Fujimaki, T. Satoh, K. Hinode, Shuichi Nagasawa, Y. Kitagawa, Mutsuo Hidaka

Published Jun 1, 2007• 15 citations
Publisher

Abstract

Large-scale SFQ integrated circuits require a large amount of dc-bias current. The magnetic fields induced by the dc-bias currents and the return currents flowing in a ground plane have a great influence on the performance of SFQ circuits. As an approach to reduce the influence, the dc-power (DCP) layer placed under a ground plane is newly introduced in SRL advanced Nb process. We have experimentally evaluated the effects of the DCP layer using SQUIDs and large-scale Josephson transmission line (JTL) circuits with more than 10,000 junctions. The SQUIDs showed that there was small magnetic flux coupling between the DCP lines and themselves and that the coupled flux was enhanced by the return current. The coupled flux decreased with increasing line width of the DCP lines and with increasing distance from the centerlines of them. In the large-scale JTL tests, the cells with DCP patterns showed wider operating margins than the CONNECT OPEN cells with partial magnetic shielding of bias current lines. The test results also showed that a line shape along the periphery of a cell was more effective than a plane shape within a cell as a DCP layer pattern for bias current feeds.

DOI
10.1109/tasc.2007.897701

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Large-scale SFQ integrated circuits require a large amount of dc-bias current. The magnetic fields induced by the dc-bias currents and the return currents flowing in a ground plane have a great influence on the performance of SFQ circuits. As an approach to reduce the influence, the dc-power (DCP) layer placed under a ground plane is newly introduced in SRL advanced Nb process. We have experimentally evaluated the effects of the DCP layer using SQUIDs and large-scale Josephson transmission line (JTL) circuits with more than 10,000 junctions. The SQUIDs showed that there was small magnetic flux coupling between the DCP lines and themselves and that the coupled flux was enhanced by the return current. The coupled flux decreased with increasing line width of the DCP lines and with increasing distance from the centerlines of them. In the large-scale JTL tests, the cells with DCP patterns showed wider operating margins than the CONNECT OPEN cells with partial magnetic shielding of bias current lines. The test results also showed that a line shape along the periphery of a cell was more effective than a plane shape within a cell as a DCP layer pattern for bias current feeds.
We have evaluated the effects of a DC power (DCP) layer in a 10-Nb-layer device using SQUIDs and large-scale Josephson transmission lines (LS-JTLs). The 10-Nb-layer device has recently been developed for SFQ LSIs, with an active layer including Josephson junctions (JJs) at the top, two passive transmission line layers in the middle, and the DCP layer for bias current feeds at the bottom. The evaluation with SQUIDs revealed that the 10-Nb-layer device structure drastically reduced the magnetic flux induced by DC currents flowing through the DCP line, in comparison with the previous advanced process device structure. A major factor for this reduction was an increase in the number of ground layers between the DCP layer and the active layer. In the test of the LS-JTLs containing about 12000 JJs, we obtained the operating margins as wide as numerically simulated ones. We also observed no difference in the margins between a method for extracting ground return currents through ground layers and that through the dedicated layer. These results demonstrated that the 10-Nb-layer device structure is suitable for SFQ-LSIs.
We have investigated the effect of a dc-power (DCP) layer on the performance of single flux quantum (SFQ) circuits by changing the film thickness of a ground plane (GP). The DCP layer was placed below the GP and was used as bias current feeds. Two measurements were conducted. One was direct detection of the magnetic flux above the GP by using SQUIDs. The results indicated that the GPs with film thicknesses of more than 400 nm were effective to completely suppress the flux under the condition that the return current was extracted from the ground plane. The other was evaluation of the operating margins of the 408 bit shift register circuits (SRs) with 8032 Josephson junctions and a total designed bias current of 1.05 A. The results showed that a 500 nm thick GP had an advantage over a 300 nm thick GP in the dependence of the upper margin on the bias current port of the SR.
The supply of bias current is one of the key problems to be overcome for fully operational large-scale SFQ circuits. Large currents cause various undesirable effects that degrade circuit operation. The magnetic field induced by a large DC bias current affects the operation of several SFQ cells, even with a microstrip-line structure applied for the bias lines. In this paper, experimental results using SQUIDs show that bias-line shielding is the most effective way to reduce the effect of the DC bias current. The operating margins of SFQ cells were also found to be sensitive to the current in the ground plane. The location of a ground bonding should be close to the point of current injection if we wish to avoid undesirable diffusion of current through the ground plane. We confirmed the effectiveness of bias-line shielding and of the location of ground bonding with a circuit composed of about 500 junctions.
In this study we have investigated the influence of an externally applied ground current on large-scale single-flux-quantum (SFQ) circuits. A Josephson transmission line containing 10 4 junctions with a total bias current of 1.8 A was examined for this purpose. The test results show that the ground current affects the circuit operation remarkably strongly. In the worst case, the ground current of about 10 mA for a 5 mm die chip disturbs the circuit operation. The results also show that DC/SFQ and SFQ/DC converters are very sensitive to the ground current. To eliminate the effect of the ground current, we have made SFQ circuits completely shielded from the external magnetic field by using upper and lower ground planes. It was found that the shielded SFQ circuits are much less sensitive to the ground current. These results show that the magnetic shielding structure is one solution for reducing the effects of the ground current and hence the external magnetic field.
An increase in bias currents supplied to single-flux-quantum (SFQ) circuits is a rising problem in building large-scale integrated SFQ circuits, because the magnetic fields generated by bias currents and ground return currents affect the circuit operation. Current recycling technique, which can drastically reduce the total bias current of SFQ circuits, is expected to be a very effective solution for large-scale SFQ circuits. To realize the current recycling technique, signal transmission between SFQ logic circuits located on different ground planes is required. Two types of inductively coupled pulse transfer circuits were examined in this study. One is composed of a simple JTL driver and a DC-SQUID receiver whose junctions are slightly under-damped to enhance the magnetic sensitivity of the SQUID. The other circuit is composed of an SFQ driver based on a delay flip-flop (DFF) and a SQUID receiver. The advantage of the DFF-based circuit is that the coupling time between the driver and the receiver can be increased to ensure appropriate switching in the receiver junction. Two types of transfer circuits were implemented using the SRL 2.5 kA/cm2Nb process and their correct operation was experimentally confirmed. Circuit structures for effective coupling of the SFQ pulse transfer were also investigated. It was shown that a ground plane boundary should be separated from a ground plane hole underneath coupling inductors to obtain high coupling factors.
The increase in the single-flux-quantum (SFQ) circuit scale will cause the overall bias current to increase dramatically. The magnetic field interference caused by the current supplied to the SFQ circuit can no longer be ignored. In addition, more complex SFQ circuits require a cell library for more diversified cell types and a more stable operating range to ensure the circuits’ yield. The SIMIT-Nb03P process is then put forward as a tradeoff between process stability and cost. It is compatible with the Nb03 process and does not need an expensive chemical mechanical planarization process. The added new dc power layer is proved to have less interference by simulation. The conversion from Nb03 to Nb03P cell library was very convenient. In addition, some new cells are designed to meet the requirements of complex SFQ circuits. Test circuits of 20 cells of Nb03P were designed and fabricated and were fully verified at low frequencies. The common bias margin of the whole cell library is (–26%, 20%). A variety of large-scale circuits (up to more than 10 000 Josephson junctions) achieve correct function at high frequencies and show good yields on the wafer. It shows that this updated process is cost efficient and suitable for large-scale integration circuits.