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IEEE Transactions on Electron Devices

RF response of high RF-T/sub c/ SNS Josephson microbridges suitable for integrated circuit applications

Ronald H. Ono, James A. Beall, Michael W. Cromar, Todd E. Harvey, Martin Johansson, C. D. Reintsema, David A. Rudman

Published Jan 1, 1991• 0 citations
Publisher

Abstract

A simple process has been developed for microfabricating high transition temperature superconductor-normal-metal-superconductor (SNS) Josephson devices that operate up to 80 K and are reasonably ideal at 43 K. Bridge resistances greater than 10 Omega and critical-current-normal-state resistance (I/sub c/R/sub N/) products greater than 1 mV have been achieved. Clearly defined RF steps have been observed, with power dependence qualitatively similar to theoretical predictions. The fabrication process and the device characteristics are suitable for superconducting integrated circuit applications such as millimeter-wave Josephson oscillators, parametric amplifiers, and single-flux quantum digital logic.

DOI
10.1109/16.158752

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A simple process has been developed for microfabricating high transition temperature superconductor-normal-metal-superconductor (SNS) Josephson devices that operate up to 80 K and are reasonably ideal at 43 K. Bridge resistances greater than 10 Omega and critical-current-normal-state resistance (I/sub c/R/sub N/) products greater than 1 mV have been achieved. Clearly defined RF steps have been observed, with power dependence qualitatively similar to theoretical predictions. The fabrication process and the device characteristics are suitable for superconducting integrated circuit applications such as millimeter-wave Josephson oscillators, parametric amplifiers, and single-flux quantum digital logic.
We have fabricated step edge superconductor-normal metal-superconductor microbridges using YBa2Cu3O7−x(YBCO) and noble metals with critical current-normal resistance (IcRN) products as high as 10 mV and normal resistances up to 38 Ω. Our fabrication process achieves high values of the IcRN product by exploiting the anisotropy in the properties of epitaxial YBCO films, allowing contact only between normal metal and superconductor through the crystalline axes which support the largest Josephson coupling. This results in a dramatic increase in the normal resistance of a junction without decreasing its critical current. We discuss the role of the superconductor-normal metal boundary resistance on the junction electrical properties. We have coupled submillimeter wave rf currents quasioptically into junctions integrated at the feeds of noble metal planar log periodic antennas and have induced up to 7 Shapiro steps in the current-voltage characteristics with a 760 GHz beam from a far infrared laser.
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics.>
We have studied the far infrared behavior of high -T/sub c/ superconductor-normal metal-superconductor (SNS) microbridges with T/sub c/>85 K and critical current-resistance products (I/sub c/R/sub N/) as high as 10 mV at 4 K. These are the highest I/sub c/R/sub N/ products reported to date for microfabricated Josephson junctions of any material. The junctions were integrated at the feeds of planar log-periodic antennas made from Au thin films. The junctions had dc normal state resistances R/sub N/ between 6 and 38 /spl Omega/, reasonably well matched to the antenna's estimated RF impedance of 53 /spl Omega/. Far infrared laser radiation at 404, 760, and 992 GHz induced distinct Shapiro steps (i.e. constant voltage steps at voltages n(hf/2e), n=1,2,...) in the current voltage characteristics as well as modulation of the critical current. Steps were observed at voltages up to 17 mV and 6 mV, at temperatures of 9 K and 57 K respectively. This corresponds to maximum Josephson oscillation frequencies of 8 and 3 THz at these temperatures. These are the first far infrared measurements performed on high T/sub c/ junctions. Measurements of the power, frequency, and temperature dependence of the Shapiro steps are presented and discussed in the context of a resistively and capacitively shunted junction (RCSJ) model. A value of 4.5 fF for the junction capacitance is inferred from the hysteresis of the slightly underdamped current-voltage characteristics. >
Superconductor-normal metal-superconductor (SNS) junctions are well-suited for large-scale integrated superconducting circuits. Potential applications are programmable voltage standards, digital-to-analog converters and large-scale RSFQ circuits. The application of SNS junctions provides some advantages, e.g. a simplified fabrication technology and reduced parasitic inductances. But it requires a technological process with dimensions down to the submicrometer region to achieve sufficiently high characteristic voltages I/sub C/R/sub N/. In our process the normal metal interlayer is titanium. Therefore the sidewall insulation of the junctions can be made by anodization, as it is known from the Nb-Al technology. Nb-Ti-Nb Josephson junctions and junction arrays were fabricated down to the submicrometer range with I/sub C/R/sub N/ values up to 87 microvolt depending on the titanium thickness. Their measured critical currents have a small spread of about 10 percent. Shapiro steps are observed under the influence of microwave irradiation. For the application of such junctions in a programmable Josephson voltage standard a new type of microwave circuit using coplanar strips is proposed and successfully tested in 10 V SIS circuits.
Several applications of Josephson junctions (JJs) in low-temperature superconducting circuits such as programmable voltage standards and SFQ logical circuits or SQUID sensors require JJs with sub-µm dimensions. A method for preparing superconductor-isolator-superconductor (SIS) JJs as well as superconductor-normal metal-superconductor (SNS) JJs was developed which allows the preparation of both types of junctions by nearly the same technological process. Titanium is used as the normal metal for the SNS JJ. Ti can be anodically oxidized and a technology similar to the well-tried Nb-Al technology for SIS JJs can be applied to the SNS system, too. By electron-beam exposure of a negative deep UV photoresist (ma-N 2400) a stable resist mask is generated which has to withstand the following three self-aligned process steps: etching of the Nb counterelectrode by RIE, isolation by anodization and lifting of a SiO planarization layer. By this process SNS (Nb-Ti-Nb) and SIS (Nb-Al/AlO x -Nb) Josephson junctions with smallest junction areas of 0.49 µm 2 were prepared and characterized by dc measurements and under the influence of microwave irradiation. The Nb-Ti-Nb junctions have I c R n products of 87 µV. They can be used for programmable Josephson voltage standard circuits at frequencies of 70 GHz.
20 kA/cm2{\hbox{kA/cm}}^{2}kA/cm2 Process Development for Superconducting Integrated Circuits With 80 GHz Clock Frequency
Results of the development of an advanced fabrication process for superconductor integrated circuits (ICs) with 20 kA/cm2Nb/AlOx/Nb Josephson junctions is presented. The process has 4 niobium superconducting layers, one MoNxresistor layer with 4.0 Ohm per square sheet resistance for the junction shunting and circuit biasing, and employs circular Josephson junctions with the minimum diameter of 1 mum; total 11 photolithography levels. The goal of this process development is the demonstration of the feasibility of 80 GHz clock speeds in superconducting ICs for digital signal processing (DSP) and high performance computing. Basic components of rapid single flux quantum (RSFQ) logic such as DC/SFQ, SFQ/DC converters, Josephson transmission lines (JTLs), and simple digital circuits such as T-flip-flops and 4-bit digital counters have been fabricated and tested. The T-flip-flops were shown to operate up to 400 GHz with the widest margin of operation of plusmn13% at 325 GHz. Digital testing results on the 4-bit counters as well as the junctions, resistors, and other process parameters are also presented. Prospects for yet higher speeds and very large scale integration are discussed.