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Asia-Pacific Microwave Conference (APMC)

Performance of a 500 GHz SIS Mixer with a Distributed Junction Array

Jing Huang, J. Li, Shijie Huang, J. Xu, Sheng-Cai Shi, Ming-Jye Wang

Published Mar 22, 2006• 0 citations
Publisher

Abstract

This paper introduces the development of a 500 GHz superconducting SIS (superconductor-insulator-superconductor) mixer, which adopts a distributed junction array of five identical Nb/AlOx/Nb SIS junctions connected in parallel. The noise performance of this 500-GHz SIS mixer is thoroughly investigated, in particular for different quasi-optical setups.

DOI
10.1109/apmc.2005.1606258

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This paper introduces the development of a 500 GHz superconducting SIS (superconductor-insulator-superconductor) mixer, which adopts a distributed junction array of five identical Nb/AlOx/Nb SIS junctions connected in parallel. The noise performance of this 500-GHz SIS mixer is thoroughly investigated, in particular for different quasi-optical setups.
A Superconductor-Insulator-Superconductor (SIS) mixer using parallel array of N junctions have been studied. It has been shown by theoretical analysis that the performance of this type of device is excellent and that nearly quantum-limited performance of the mixer can be obtained. It has been demonstrated that the double sideband (DSB) noise temperature of a receiver employing parallel array of twin junctions, which is the most simplest case in the parallel array of N junctions, was approximately 3 to 5 times as large as the quantum limited photon noise up to the gap frequency of Nb (approximately 700 GHz). It has been also shown that the bandwidth performance of parallel junction arrays can be improved significantly with a large number of SIS junctions even if SIS junctions with a relatively low current density or a large (omega) RNCJ product are adopted in the arrays.
In this paper, we present the experimental results of a waveguide superconductor-insulator-superconductor (SIS) mixer with an inhomogeneous distributed junction array. The mixer consists of five Nb-AlO/sub x/-Nb SIS junctions with different dimensions distributed on a superconducting microstrip. The critical current density of the fabricated junctions was 3100 A/cm/sup 2/. Detailed measurements of the receiver noise temperature have been made in the frequency range from 190 to 284 GHz at 4.2 K. A double-sideband (DSB) receiver noise temperature of 5 hw/k was obtained in the frequency range from 202 to 284 GHz and the lowest DSB receiver noise temperature of 46 K was obtained at 210 GHz.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AlOx/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region. Considering the bandwidth and output power of local-oscillator (LO) signal sources are quite limited around 1THz, we firstly develop a waveguide NbN-based SIS mixer at 0.5THz. Three types of SIS junctions, i.e., long junction, parallel-connected tunnel junction (PCTJ) and distributed junction array (DJ) are investigated. They are all comprised of NbN-AlN-NbN tri-layer fabricated on an MgO substrate and have the same current density (Jc) of 10kA/cm2. In this paper, we describe their design, fabrication and preliminary experimental results.
This paper presents design and performance data for a 100-GHz waveguide superconductor-insulator-superconductor (SIS) mixer, which is incorporated with a twin-junction device (i.e., two identical junctions connected in parallel through a tuning inductance) and a fixed-tuned broad-band waveguide mixer mount. The 100-GHz mixer is actually developed as a prototype of the 500-GHz one. The constructed 100-GHz SIS receiver results in an overall receiver noise temperature (DSB) of less than 40 K over the frequency range from 80-120 GHz, with a minimum value of just 20 K that is four times as large as the quantum limit (i.e., 4/spl planck//spl omega//k). Such a performance is comparable or even superior to those of the best mechanically tunable waveguide SIS receivers at the same frequency band. In addition, some interesting mixing behaviors related to this two-junction device are described in detail.
We propose a low-noise and low-power-consumption microwave amplifier using superconductor-insulator-superconductor (SIS) mixers as quasi-particle frequency up- and down-converters pumped by a Josephson array oscillator in the millimeter-wave band. A proof-of-concept study of an amplifier with two W-band waveguide mixers using Nb/Al-AlOx/Nb junctions in a cascade connection demonstrated an average gain of 6 dB and a noise temperature of 12 K from nearly DC to 5 GHz. We also designed and fabricated a Josephson array oscillator at 100 GHz, which consisted of 31 overdamped Josephson junctions placed at each half-wavelength in an Nb microstrip line. The estimated output power of the oscillator was 0.2 μW at 100 GHz, which can be increased by increasing the number of the oscillator junctions. These results suggest that the proposed SIS mixer-based amplifier is suitable for on-chip integrated circuits to be implemented in large-scale multipixel SIS receivers and quantum computers.
Superconductor–insulator–superconductor (SIS) mixers remain the choice of heterodyne mixers for single-dish telescopes and interferometers at millimeter and submillimeter wavelengths. Compared with conventional Nb/AlOx/Nb superconducting tunnel junctions, Nb/AlN/NbN ones have larger gap voltage and may reach critical-current density beyond 10kA/cm2, which are both of particularly interest in developing broadband SIS mixers. Here we report on the design and measurement of an SIS mixer based on Nb/AlN/NbN parallel connected twin junctions (PCTJ) incorporating NbTiN/SiO2/Al microstrip circuit. The junctions have a gap voltage of 3.18mV and a critical-current density of 15kA/cm2. The measured receiver noise temperature reach 5hν/kB among 200-260GHz band, and the mixer’s fractional bandwidth is about 40% centered at 230GHz.