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International Kharkiv Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves

Novel superconducting switching device for microwave applications

Volodymyr E. Shaternik, É. M. Rudenko, M. Belogovskii

Published Nov 13, 2002• 0 citations
Publisher

Abstract

We have developed a novel superconducting switch where the states of a quasiparticle tunnel junction (detector) are set with an external magnetic field generated by a control superconducting strip. Because the strip is only slightly overlaps the underlying junction, its non-uniform field with a high concentration near the edge strongly influences the junction current-voltage characteristics. A prototype of the device proposed has been realized on the base of thin Pb films separated by Sn oxide layers. A semiquantitative model of the switch operation using the critical-state approach is in good agreement with experimental data. After miniaturizing, applications in high-frequency superconducting microelectronics seem to be practically promising.

DOI
10.1109/msmw.2001.946856

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We have developed a novel superconducting switch where the states of a quasiparticle tunnel junction (detector) are set with an external magnetic field generated by a control superconducting strip. Because the strip is only slightly overlaps the underlying junction, its non-uniform field with a high concentration near the edge strongly influences the junction current-voltage characteristics. A prototype of the device proposed has been realized on the base of thin Pb films separated by Sn oxide layers. A semiquantitative model of the switch operation using the critical-state approach is in good agreement with experimental data. After miniaturizing, applications in high-frequency superconducting microelectronics seem to be practically promising.
Superconducting quantum interference devices (SQUIDs) that incorporate two superconductor/insulator/superconductor (SIS) Josephson junctions in a closed loop form the core of some of the most sensitive detectors of magnetic and electric fields currently available. SQUIDs in these applications are typically operated with a finite voltage which generates microwave radiation through the ac Josephson effect. This radiation may impact the system being measured. We describe here a SQUID in which the Josephson junctions are formed from strips of normal metal (N) in good electrical contact with the superconductor (S). Such SNS SQUIDs can be operated under a finite voltage bias with performance comparable or potentially better than conventional SIS SQUIDs. However, they also permit a mode of operation that is based on the unusual interplay of quasiparticle currents and supercurrents in the normal metal of the Josephson junction. The method allows measurements of the flux dependence of the critical current of the SNS SQUID without applying a finite voltage bias across the SNS junction, enabling sensitive flux detection without generating microwave radiation.
A certain way of coupling to the thin-film Josephson tunneling junction has been studied. The coupling structure comprises a superconducting stripline which is terminated to the edge of the Nb-oxide-Pb junction. A mismatch of 23 dB has been obtained so far between the signal source and the junction at X-band compared to the earlier estimates of 40 dB between conventional size outer circuits and the junction. Prospects for improving the coupling are good. Methods of estimating the voltage and power which are coupled to the junction are given.
We propose a superconducting microwave relaxation oscillator based on a nanowire shunted by a resistor and an inductor controlled by quasiparticle injection from a tunnel junction positioned on it: the QUISTRON. This device exhibits relaxation oscillator behavior with dc voltage--controlled frequency tuning and dc bias. The device frequency is modulated via the tunnel junction, which induces localized heating by injecting quasiparticles. This heating mechanism modulates the nanowire switching current, enabling relaxation oscillations when it falls below the bias current. We simulate the device operating principles and its performance across various parameters, including different choices of shunt resistor, shunt inductance, and bath temperature ranging from 20 mK to 1 K. The device showed oscillation with a frequency range approximately between 1 and 10 GHz and total energy dissipation per cycle of approximately 100100100 zJ. Our results suggest that this design offers a promising platform for compact, tunable superconducting oscillators in the microwave spectrum with potential applications in quantum information processing, microwave technology, and ultralow-power electronics. The straightforward frequency control mechanism and integration potential make this device an attractive candidate for superconducting microwave local oscillators.
We propose a superconducting microwave relaxation oscillator based on a nanowire shunted by a resistor and an inductor controlled by quasiparticle injection from a tunnel junction positioned on it: the QUISTRON. This device exhibits relaxation oscillator behavior with DC voltage-controlled frequency tuning and DC current bias. The device frequency is modulated via the tunnel junction, which induces localized heating by injecting quasiparticles. This heating mechanism modulates the nanowire switching current, enabling relaxation oscillations when it falls below the bias current. We demonstrate the device operating principles and characterize its performance across various parameters, including different choices of shunt resistor, shunt inductance, and bath temperature ranging from 20 mK to 1 K. The device showed oscillation with a frequency range approximately between 1 GHz and 10 GHz and total energy dissipation per cycle of ∼100\sim100∼100 zJ. Our results suggest that this design offers a promising platform for compact, tunable superconducting oscillators in the microwave spectrum with potential applications in quantum information processing, microwave technology, and ultra-low-power electronics. The straightforward frequency control mechanism and integration potential make this device an attractive candidate for superconducting microwave local oscillators.
We have studied the power dependence of the microwave-induced dc voltages across "unbiased" Pb---Pb oxide---Pb Josephson tunnel junctions and found a systematic dependence. We have also found that the Josephson effect in the form of induced quantum voltages was observable in a large dc magnetic field as high as 0.5 kG, about one-half of the Hc2{H}_{c2}Hc2​ of the superconducting Pb film.
Since the discovery of the high-transition-temperature (T c ) superconductive oxide materials, there has been very substantial progress in the understanding and control of these materials in thin film form. Although the initial projections of rapid and pervasive applicability of the high T c materials in the market place have not been met, the sensibly reproducible synthesis of high-quality thin films on substrate wafers of up to 50.8 mm diameter has generated a wide variety of preprototype microwave components, some of which are already edging into the market place. The current state of the microwave properties of low T c and high T c thin film materials will be reviewed and selected examples of preprototype devices drawn from low T c and high T c technology will be described. These components include transmission lines, filters, mixers and amplifiers for microwave signals, and information processing circuits for wideband analogue and high-speed digital waveforms. Speculation is offered on the long-term applications of superconducting electronics. Despite the substantial progress in materials, much more is required. The technology which must be developed in order to deliver practical superconducting circuits will be highlighted.