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IEEE Photonics Technology Letters

Optical Bistable Operations in AlGaAs-Based Photonic Crystal Slab Microcavity at Telecommunication Wavelengths

Yu Tanaka, H. Kawashi, Naoki Ikeda, Yoshimasa Sugimoto, Haruhiko Kuwatsuka, Toshifumi Hasama, H. Ishikawa

Published Sep 13, 2006• 16 citations
Publisher

Abstract

We report on bistable operations in a microcavity formed on an AlGaAs-based photonic crystal slab at telecommunication wavelengths. We designed the cavity to achieve a high quality ($Q$)-factor, while maintaining a small mode volume; this was accomplished by removal of a single air hole. The fabricated microcavity exhibited a resonant peak with a$Q$-factor of 1900 at 1548 nm. In nonlinear transmission measurement, when the input power was increased, a bistable characteristic which was dependent on the detuned wavelength from the resonance was observed. The bistability was considered to originate from thermal nonlinearity due to two-photon absorption.

DOI
10.1109/lpt.2006.882305

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We report on bistable operations in a microcavity formed on an AlGaAs-based photonic crystal slab at telecommunication wavelengths. We designed the cavity to achieve a high quality (QQQ)-factor, while maintaining a small mode volume; this was accomplished by removal of a single air hole. The fabricated microcavity exhibited a resonant peak with aQQQ-factor of 1900 at 1548 nm. In nonlinear transmission measurement, when the input power was increased, a bistable characteristic which was dependent on the detuned wavelength from the resonance was observed. The bistability was considered to originate from thermal nonlinearity due to two-photon absorption.
We demonstrate extremely low-power all-optical bistability by using photonic crystal linear resonators based on InGaAsP quantum-wells. Since the photonic crystal cavity has a high quality-factor and a small mode-volume, the photon density in the cavity is extremely high, which makes it possible to reduce the bistable power. The measured minimum bistable threshold power was 37 muW by using a fiber coupling technique, and the estimated nonlinear refractive index (n2) was -6.84times10-14m2/W at a wavelength of 1610.8 nm which is near the resonant wavelength of quantum-well. The low-power optical bistable operations in a single photonic crystal cavity open the possibility of integrated optical devices such as an all-optical memory and switch, based on photonic crystals
Optical bistable responses in AlGaAs-based photonic crystal cavities with Al fractions of 0.16 and 0.27 under a stationary condition are studied. An analysis of the experimental results with a one-dimensional etalon model indicates that the bistable response is primarily driven by optical nonlinearities that stem from a heat generation in two-photon absorption and in free-carrier absorption. A free-carrier plasma effect is not influential, which is a major difference from the case of Si photonic crystal cavities. The accumulation of heat enables the phase or index to significantly change. An estimate indicates that a highQQQ-factor is advantageous for driving bistability exclusively by the Kerr effect.
This study proposes a novel silicon nanocrystal SiNC/SiO[Formula: see text] embedded slotted photonic crystal nanocavity employing precise width modulation to explore optical bistability and self-pulsing behavior for microwave signal generation. The designed cavity achieves an ultra-high quality factor (Q) of [Formula: see text] and a low modal volume of [Formula: see text]. Theoretical modeling incorporating Kerr nonlinearity, two-photon absorption, and free carrier effects is used to analyze the bistability response. Simulation results reveal a low threshold power of [Formula: see text] for optical bistability under a - 20 pm detuning condition. Additionally, the cavity demonstrates microwave frequency generation through self-pulsing oscillations, with a fundamental mode and observable second harmonic at 21.34 GHz. Fabrication tolerance is also evaluated, showing that the design sustains performance with up to 9% randomness in hole radii, 12% in x-position, and 20% in z-position of air holes. These findings confirm the feasibility of the proposed structure for low-power, high-frequency integrated photonic applications.
Motivated by developments in quantum information science, much recent effort has been directed toward coupling individual quantum emitters to optical microcavities. Such systems can be used to produce single photons on demand, enable nonlinear optical switching at a single photon level, and implement functional nodes of a quantum network, where the emitters serve as processing nodes and photons are used for long-distance quantum communication. For many of these practical applications, it is important to develop techniques that allow one to generate outgoing single photons of desired frequency and bandwidth, enabling hybrid networks connecting different types of emitters and long-distance transmission over telecommunications wavelengths. Here, we propose a novel approach that makes use of a nonlinear optical resonator, in which the single photon originating from the atom-like emitter is directly converted into a photon with desired frequency and bandwidth using the intracavity nonlinearity. As specific examples, we discuss a high-finesse, TE-TM double-mode photonic crystal cavity design that allows for direct generation of single photons at telecom wavelengths starting from an InAs/GaAs quantum dot with a 950 nm transition wavelength, and a scheme for direct optical coupling of such a quantum dot with a diamond nitrogen-vacancy center at 637 nm.