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Journal of Experimental and Theoretical Physics

High-contrast atomic dark resonances formed in a ladder system of rubidium atoms in submicron structures

David G. Sarkisyan, Armen D. Sargsyan, James Keaveney, Charles S. Adams

Published Jul 1, 2014• 7 citations
Publisher

Abstract

It is shown that high-contrast resonance of electromagnetically induced transparency (EIT) in a ladder Ξ-system of 5S 1/2-5P 3/2-5D 5/2 levels can be formed in optical cells containing a column of rubidium vapor with thickness L in an interval of 100 nm ≤ L ≤ 780 nm. Using bichromatic laser radiation with certain parameters, an 83% contrast of the EIT resonance (or dark resonance, DR) has been achieved for a vapor column thickness of L = 780 nm. An important condition for the formation of high-contrast DR is that the frequency of the coupling laser radiation must be resonant with the frequency of the corresponding 5P 3/2-5D 5/2 transition (for the probe radiation frequency scanned over the 5S 1/2-5P 3/2 transition). It is also shown that a DR can be formed at a record small vapor column thickness of L ≈ 100 nm. Expressions that can be used to estimate the expected DR width at small L values are presented.

DOI
10.1134/s1063776114060181

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Optics and Spectroscopy•Oct 1, 2010•19 citations
It is shown that high-contrast resonance of electromagnetically induced transparency (EIT) in a ladder Ξ-system of 5S 1/2-5P 3/2-5D 5/2 levels can be formed in optical cells containing a column of rubidium vapor with thickness L in an interval of 100 nm ≤ L ≤ 780 nm. Using bichromatic laser radiation with certain parameters, an 83% contrast of the EIT resonance (or dark resonance, DR) has been achieved for a vapor column thickness of L = 780 nm. An important condition for the formation of high-contrast DR is that the frequency of the coupling laser radiation must be resonant with the frequency of the corresponding 5P 3/2-5D 5/2 transition (for the probe radiation frequency scanned over the 5S 1/2-5P 3/2 transition). It is also shown that a DR can be formed at a record small vapor column thickness of L ≈ 100 nm. Expressions that can be used to estimate the expected DR width at small L values are presented.
Abstract The effect of electromagnetically induced transparency (EIT) in a three-level ladder system 5S1/2‒5P3/2 –5D5/2 of Rb atoms is investigated. The effect of spectral narrowing of a dark resonance (DR) as a function of atomic vapor density and thickness L of a spectroscopic cell containing Rb vapor is demonstrated. Thickness L was varied in the range of 390 nm to 4 mm, while atomic density N was increased up to ~1016 cm–3; in the process, high-intensity coupling radiation and weak probe radiation were used. The strongest effect, namely, a 22-fold spectral narrowing of the DR, was achieved in a cell of thickness L = 4 mm. The effect of spectral narrowing was decreasing with decrease in thickness L: a 2.4-fold spectral narrowing of the DR was observed at L = 2 μm. Spectral narrowing was nearly absent at L = 0.8 μm, and spectral broadening of the DR was observed with further decrease in the cell thickness down to L = 0.4 μm. A close to 100% DR contrast was achieved in nearly all cases at moderate atomic densities and high intensities of the coupling radiation. An interpretation of the effect of spectral narrowing and broadening of the DR is proposed.
The effect of electromagnetically induced transparency (EIT) in a Λ-system formed by rubidium atoms contained in thin (10–60 μm) and extremely thin (0.3–5 μm) cells was studied experimentally. It was found that parameters of the EIT resonance degrade slowly in the case where the frequency of the coupling laser is in resonance with the D 2 transition of rubidium, which enabled the registration of the EIT resonance in a record thin cell with a thickness of L = 390 nm. The specific features of EIT in extremely thin cells reveal themselves when the coupling laser has a frequency detuning Δ from the atomic transition. In this case, the width of the EIT resonance rapidly increases upon an increase in Δ at fixed L (an opposite effect takes place in centimeter-scale cells). It is shown that the width of the EIT resonance is inversely proportional to L in the case of fixed large detuning Δ. The nearly tenfold broadening of the EIT resonance for large values of detuning Δ is caused by the influence of atomic collisions with cell windows on dephasing rate of coherence. The expressions that allow the estimation of the EIT-resonance width for various values of detuning Δ and small values of thickness L are found.
The process of electromagnetically induced transparency (EIT) is studied using an extremely thin cell with thickness of a vapor column of rubidium atoms L = 794 nm. Wavelengths of resonant laser beams λ ≈ 794 nm. Results of the study of behavior of the EIT resonance (which is also called the “dark” resonance) formed in the Л system of the D 1 line of 87Rb atoms in strong magnetic fields up to 1700 G (0.17 T) are reported for the first time. Three dark resonances are recorded in magnetic fields with induction B < 300 G, two resonances are recorded at B > 650 G, and only one dark resonance is retained at B > 1200 G. A method of the formation of a dark resonance at a given frequency is demonstrated that will allow, under the corresponding conditions, the formation of a dark resonance also at B > 0.2 T. The experimental results are well described by the known theoretical models. Practical applications of these results are indicated.
Electromagnetically induced transparency (EIT) effect in a -system formed by Cs atoms line, enclosed in nanometric-thin cells, is studied both experimentally and theoretically for the first time. The atomic column thickness varies in the range of 50–1500 nm. It is demonstrated that when the coupling laser frequency is in exact resonance with the corresponding atomic transition, the parameters of the EIT resonance (also called dark resonance (DR)) depend weakly on , which allows us to detect DR at nm with the contrast of . The obtained DR parameters are the best as compared with those for Rb and lines and Cs line. The DR contrast and width are studied versus laser frequency detunings, coupling laser power, cell thickness, temperature, and applied external magnetic field. The well-resolved splitting of the DR resonance in a magnetic field for nm can be used for magnetometry with high spatial resolution. The theoretical model describes well the observed results.
The narrow-band N-resonance formed in a Λ system of D 1-line rubidium atoms is studied in the presence of a buffer gas (neon) and the radiations of two continuous narrow-band diode lasers. Special-purpose cells are used to investigate the dependence of the process on vapor column thickness L in millimeter, micrometer, and nanometer ranges. A comparison of the dependences of the N-resonance and the electromagnetically induced transparency (EIT) resonance on L demonstrates that the minimum (record) thickness at which the N-resonance can be detected is L = 50 μm and that a high-contrast EIT resonance can easily be formed even at L ≈ 800 nm. The N-resonance in a magnetic field for 85Rb atoms is shown to split into five or six components depending on the magnetic field and laser radiation directions. The results obtained indicate that levels F g = 2, 3 are initial and final in the N-resonance formation. The dependence of the N-resonance on the angle between the laser beams is analyzed, and practical applications are noted.
Experimental results of the study of processes of electromagnetically induced transparency (EIT) and two-photon absorption (TPA) are presented for the ladder Ξ-system obtained using the 5 S -5 P - nD , mS system of levels of the 85 Rb and 87 Rb atoms with n = 5, 26, and 27 and m = 39 and 48. To perform these studies, a high-temperature optical cell was designed with several regions with the following thicknesses L : 2 mm, 0.7 mm, and the region of 2–6 μm. The advantages of using thin cells over ordinary cells several centimeters thick are demonstrated. It is shown that the EIT resonance parameters for n = 5, 26, and 27 deteriorate insignificantly for thickness down to 700 μm. The TPA is recorded with the cell thickness decreasing down to L = 6 μm. It is shown that using the EIT and TPA processes makes it possible to measure the hyperfine and fine structures of highlying atomic levels. The influence of the cell walls is appreciable in recording the EIT resonances in the system 5 S -5 P -39 S with L = 0.7 mm and in the system 5 S -5 P -48 S with L = 2 mm. Possible applications of the processes studied are indicated.