Journal of Experimental and Theoretical Physics
Narrow-band N-resonance formed in thin rubidium atomic layers
Armen D. Sargsyan, R. Mirzoyan, David G. Sarkisyan
Abstract
The narrow-band N-resonance formed in a Λ system of D 1-line rubidium atoms is studied in the presence of a buffer gas (neon) and the radiations of two continuous narrow-band diode lasers. Special-purpose cells are used to investigate the dependence of the process on vapor column thickness L in millimeter, micrometer, and nanometer ranges. A comparison of the dependences of the N-resonance and the electromagnetically induced transparency (EIT) resonance on L demonstrates that the minimum (record) thickness at which the N-resonance can be detected is L = 50 μm and that a high-contrast EIT resonance can easily be formed even at L ≈ 800 nm. The N-resonance in a magnetic field for 85Rb atoms is shown to split into five or six components depending on the magnetic field and laser radiation directions. The results obtained indicate that levels F g = 2, 3 are initial and final in the N-resonance formation. The dependence of the N-resonance on the angle between the laser beams is analyzed, and practical applications are noted.