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Optics Communications

Electromagnetically induced transparency with two dimensional electron spins

Ataç İmamoğlu

Published May 1, 2000• 29 citations
Publisher
DOI
10.1016/s0030-4018(99)00667-7

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We report the observation of electromagnetically induced transparency (EIT) with an ensemble of donor-bound electrons in low-doped n-GaAs. We used pure GaAs layers with Si doping at very low concentration in a strong magnetic field. EIT was implemented with the two optical transitions that exist for the three-level system that is formed by the two electron spin states and a donor-bound trion state. Our results show that EIT with n-GaAs can serve as a platform for studies of nonlocal quantum entanglement with spins in semiconductors, as well as for controlling and probing dynamical nuclear polarization with coherent electron spins.
We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.