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Conference on Lasers and Electro-Optics

Electromagnetically Induced Transparency of Spin Ensembles in a Two-Dimensional Electron Gas

Thomas K. Baldwin, Shannon O’Leary, Hailin Wang

Published Jan 1, 2012• 0 citations
Publisher

Abstract

We report experimental studies of electromagnetically induced transparency (EIT) in a two-dimensional electron gas of a modulation-doped quantum well, with the aim of realizing an ideal EIT process in a solid state spin ensemble.
DOI
10.1364/qels.2012.qm3g.5

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This PhD project contributes to a research field that aims to understand and extend the limits of how well quantum states of matter and optical fields can be prepared, controlled and detected. Central to this PhD research was the question whether an effect known as Electromagnetically Induced Transparency (EIT) can be realized with electron spins in a semiconductor. EIT forms the basis of many quantum-optical control schemes that use long-lived spin states. EIT can occur when two optical fields each drive a transition from one of two spin states to the same excited state. The application scenario is that information can be swapped between optical signal pulses and a memory function in matter, in a way that allows for processing the information in a quantum mechanical manner. Such quantum mechanical processing of information may lead to safer communication in optical fiber networks. A key result of this PhD project is the successful demonstration of EIT in the semiconductor material GaAs. The project used the spin of electrons that are located at donor atoms in the material. The thesis also reports on experiments that provide the foundation for this result, as well as on experiments that explore the limitations and possible improvements of the EIT effect in this material. This includes spectroscopy of the optical transitions of the donor atoms, studies of interactions between the spin of the donor electron and its semiconductor environment, and the design and development of unique instrumentation that was required for the research.

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Evidence for electromagnetically induced transparency in a solid medium

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Physical Review A•Nov 1, 1998•71 citations
In this paper, we review our recent experimental studies on electromagnetically induced transparency (EIT) from electron spin coherences in semiconductor quantum wells. Coherent Raman resonances, manifestations of EIT from electron spin coherences at relatively low pump intensities, were demonstrated in both V-type and Λ-type three-level systems via heavy-hole exciton and trion transitions in undoped and doped quantum wells, respectively. Coherent Raman resonances from electron spin coherences via light-hole transitions were also demonstrated in a waveguide geometry that enables a long optical interaction length as well as a large absorption coefficient. Experimental approaches that can avoid or reduce detrimental many-body effects in quantum wells are suggested for the realization of nearly ideal EIT processes.
We propose and analyze a novel scheme to realize electromagnetically induced transparency (EIT) via robust electron spin coherence in semiconductor quantum wells. This scheme uses light hole transitions in a quantum well waveguide to induce electron spin coherence in the absence of an external magnetic field. For certain polarization configurations, the light hole transitions form a crossed double-V system. EIT in this system is strongly modified by a coherent wave mixing process induced by the electron spin coherence.
We report the observation of electromagnetically induced transparency (EIT) with an ensemble of donor-bound electrons in low-doped n-GaAs. We used pure GaAs layers with Si doping at very low concentration in a strong magnetic field. EIT was implemented with the two optical transitions that exist for the three-level system that is formed by the two electron spin states and a donor-bound trion state. Our results show that EIT with n-GaAs can serve as a platform for studies of nonlocal quantum entanglement with spins in semiconductors, as well as for controlling and probing dynamical nuclear polarization with coherent electron spins.
This PhD project contributes to a research field that aims to understand and extend the limits of how well quantum states of matter and optical fields can be prepared, controlled and detected. Central to this PhD research was the question whether an effect known as Electromagnetically Induced Transparency (EIT) can be realized with electron spins in a semiconductor. EIT forms the basis of many quantum-optical control schemes that use long-lived spin states. EIT can occur when two optical fields each drive a transition from one of two spin states to the same excited state. The application scenario is that information can be swapped between optical signal pulses and a memory function in matter, in a way that allows for processing the information in a quantum mechanical manner. Such quantum mechanical processing of information may lead to safer communication in optical fiber networks. A key result of this PhD project is the successful demonstration of EIT in the semiconductor material GaAs. The project used the spin of electrons that are located at donor atoms in the material. The thesis also reports on experiments that provide the foundation for this result, as well as on experiments that explore the limitations and possible improvements of the EIT effect in this material. This includes spectroscopy of the optical transitions of the donor atoms, studies of interactions between the spin of the donor electron and its semiconductor environment, and the design and development of unique instrumentation that was required for the research.
Strong evidence indicating the occurrence of electromagnetically induced transparency (EIT) in a solid medium was found. Fluorescence reduction due to EIT was observed in solids. The excitation intensity dependence of the fluorescence reduction was found to be consistent with theoretical predictions for EIT. It was experimentally demonstrated that the essential condition for the observation of EIT in solids is that the Rabi frequency of excitation must be larger than the inhomogeneous width of the transition between the two states coupled to the third state by the pair of optical fields.